The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing von Hsieh, P. T., Chen, Y. C., Lee, M. S., Kao, K. S., Kao, M. C., Houng, M. P.

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Titanium nitride diffusion barrier for copper metallization on gallium arsenide von Chen, H.C., Tseng, B.H., Houng, M.P., Wang, Y.H.

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Improved light-output power of GaN LEDs by selective region activation von Liu, C.-C., Chen, Y.-H., Houng, M.-P., Wang, Y.-H., Su, Y.-K., Chen, W.-B., Chen, S.-M.

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Liquid phase deposited SiO2 on GaN von WU, H. R, LEE, K. W, HO, C. H, CHIANG, C. I, CHERN, Y. T, JUANG, F. S, WEN, T. C, LEE, W. I, CHYI, J. I, NIAN, T. B, CHOU, D. W, HUANG WU, J. J, WANG, Y. H, HOUNG, M. P, SZE, P. W, SU, Y. K, CHANGE, S. J

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Intra-level voltage ramping-up to dielectric breakdown failure on Cu/porous low- k interconnections in 45 nm ULSI generation von Huang, C.H., Wang, N.F., Tsai, Y.Z., Hung, C.I., Houng, M.P.

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Effect of surface treatments on the electrical properties of fluorinated silicon oxides von CHANG, W. J, HOUNG, M. P, WANG, Y. H

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Effect of a chemical modification on growth silicon dioxide films on gallium arsenide prepared by the liquid phase deposition method von Huang, C. J., Houng, M. P., Wang, Y. H., Wang, H. H.

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Characterization on the current-voltage curves of ultrathin silicon dioxides incorporated with fluorine and/or nitrogen von Chang, W J, Houng, M P, Wang, Y H

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The formation of a SiOx interfacial layer on low-k SiOCH materials fabricated in ULSI application von Huang, C.H., Wang, N.F., Tsai, Y.Z., Liu, C.C., Hung, C.I., Houng, M.P.

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Effects of gate sidewall recess on Al0.2Ga0.8As/ In0.15Ga0.85As PHEMTs by citric-based selective etchant von Yarn, K F, Liao, C I, Wang, Y H, Houng, M P

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Extremely low temperature formation of silicon dioxide on gallium arsenide von Houng, M. P., Huang, C. J., Wang, Y. H., Wang, N. F., Chang, W. J.

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A NEW APPROACH OF DUAL-BAND FILTERS BY STEPPED IMPEDANCE SIMPLIFIED CASCADED QUADRUPLET RESONATORS WITH SLOT COUPLING von Lin, Wen-Jeng, Chang, Chin-Sheng, Li, Jian-Yi, Lin, Ding-Bing, Chen, Lih-Shan, Houng, Mau-Phon

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Applications of piezoelectric ZnO film deposited on diamond-like carbon coated onto Si substrate under fabricated diamond SAW filter von Tang, I-Tseng, Chen, Han-Jan, Hwang, W.C, Wang, Y.C, Houng, Mau-Phon, Wang, Yeong-Her

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Effect of fluorine on metal-insulator-silicon solar cell performance with an low-temperature deposited SiO2 layer von HOUNG, M. P, WANG, Y. H, WANG, N. F, CHANG, W. J, HUNG, C. I

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Investigation of piezoelectric ZnO film deposited on diamond like carbon coated onto Si substrate under different sputtering conditions von Tang, I-Tseng, Wang, Y.C, Hwang, W.C, Hwang, C.C, Wu, N.C, Houng, Mau-Phon, Wang, Yeong-Her

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Carrier transport in InAs/AlSb/GaSb interband tunneling structures von LIU, M. H, WANG, Y. H, HOUNG, M. P

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Normal incidence intersubband optical transition in GaSb/InAs superlattices von CHEN, H. H, HOUNG, M. P, WANG, Y. H, YIA-CHUNG CHANG

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Deposition of high quality silicon dioxide on Hg1−xCdxTe by low-temperature liquid phase deposition method von Wang, N. F., Chang, W. J., Houng, M. P., Wang, Y. H., Huang, C. J.

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Investigation of textured Al-doped ZnO thin films using chemical wet-etching methods von Lu, Wei-Lun, Huang, Kuo-Chan, Yeh, Chih-Hung, Hung, Chen-I, Houng, Mau-Phon

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Effects of inelastic scattering on resonant interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures von Liu, M.H, Wang, Y.H, Houng, M.P

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