Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient von Yamada, Takahiro, Ito, Joyo, Asahara, Ryohei, Watanabe, Kenta, Nozaki, Mikito, Nakazawa, Satoshi, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties von Hosoi, Takuji, Nagai, Daisuke, Sometani, Mitsuru, Katsu, Yoshihito, Takeda, Hironori, Shimura, Takayoshi, Takei, Manabu, Watanabe, Heiji

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Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯) substrates von Mizobata, Hidetoshi, Tomigahara, Kazuki, Nozaki, Mikito, Kobayashi, Takuma, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices von Hosoi, Takuji, Ohsako, Momoe, Shimura, Takayoshi, Watanabe, Heiji

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Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation von Moges, Kidist, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers von Yamada, Takahiro, Ito, Joyo, Asahara, Ryohei, Watanabe, Kenta, Nozaki, Mikito, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing von Wada, Yuhei, Mizobata, Hidetoshi, Nozaki, Mikito, Kobayashi, Takuma, Hosoi, Takuji, Kachi, Tetsu, Shimura, Takayoshi, Watanabe, Heiji

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Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy von Nakanishi, Hidetoshi, Nishimura, Tatsuhiko, Kawayama, Iwao, Tonouchi, Masayoshi, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy von Hosoi, Takuji, Suzuki, Yuichiro, Shimura, Takayoshi, Watanabe, Heiji

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Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams von Uedono, Akira, Ueno, Wataru, Yamada, Takahiro, Hosoi, Takuji, Egger, Werner, Koschine, Tönjes, Hugenschmidt, Christoph, Dickmann, Marcel, Watanabe, Heiji

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Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations von Sometani, Mitsuru, Hosoi, Takuji, Hirai, Hirohisa, Hatakeyama, Tetsuo, Harada, Shinsuke, Yano, Hiroshi, Shimura, Takayoshi, Watanabe, Heiji, Yonezawa, Yoshiyuki, Okumura, Hajime

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Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth von Mizobata, Hidetoshi, Nozaki, Mikito, Kobayashi, Takuma, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures von Watanabe, Kenta, Nozaki, Mikito, Yamada, Takahiro, Nakazawa, Satoshi, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas von Chanthaphan, Atthawut, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization von Oka, Hiroshi, Amamoto, Takashi, Koyama, Masahiro, Imai, Yasuhiko, Kimura, Shigeru, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Evaluation of the Impact of Al Atoms on SiO2/ SiC Interface Property by Using 4H-SiC n+-Channel Junctionless MOSFET von Watanabe, Heiji, Hosoi, Takuji, Takeda, Hironori, Shimura, Takayoshi

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Density functional theory study on the effect of NO annealing for SiC(0001) surface with atomic-scale steps von Uemoto, Mitsuharu, Funaki, Nahoto, Yokota, Kazuma, Hosoi, Takuji, Ono, Tomoya

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Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices von Yamada, Takahiro, Terashima, Daiki, Nozaki, Mikito, Yamada, Hisashi, Takahashi, Tokio, Shimizu, Mitsuaki, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices von Nakanuma, Takato, Kobayashi, Takuma, Hosoi, Takuji, Sometani, Mitsuru, Okamoto, Mitsuo, Yoshigoe, Akitaka, Shimura, Takayoshi, Watanabe, Heiji

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Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors von Hosoi, Takuji, Ohsako, Momoe, Moges, Kidist, Ito, Koji, Kimoto, Tsunenobu, Sometani, Mitsuru, Okamoto, Mitsuo, Yoshigoe, Akitaka, Shimura, Takayoshi, Watanabe, Heiji

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