ETO, Fusion Partner in t(8;21) Acute Myeloid Leukemia, Represses Transcription by Interaction with the Human N-CoR/mSin3/HDAC1 Complex von Wang, Jianxiang, Hoshino, Taizo, Redner, Robert L., Kajigaya, Sachiko, Liu, Johnson M.

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Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals von Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo

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Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers von Nakabayashi, Masashi, Ohashi, Wataru, Tsuge, Hiroshi, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Satoh, S., Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo

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Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications von Nakabayashi, Masashi, Tsuge, Hiroshi, Ohtani, Noboru, Hoshino, Taizo, Aigo, Takashi, Yashiro, Hirokatsu, Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo, Tatsumi, Kohei

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Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates von Nakabayashi, Masashi, Ohashi, Wataru, Tsuge, Hiroshi, Ohtani, Noboru, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo

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Dislocation processes during SiC bulk crystal growth von Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo

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Investigation of heavily nitrogen-doped n + 4H–SiC crystals grown by physical vapor transport von Ohtani, Noboru, Katsuno, Masakazu, Nakabayashi, Masashi, Fujimoto, Tatsuo, Tsuge, Hiroshi, Yashiro, Hirokatsu, Aigo, Takashi, Hirano, Hosei, Hoshino, Taizo, Tatsumi, Kohei

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Annealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN Diode von Yamaguchi, Hirotaka, Matsuhata, Hirofumi, Tanaka, Atsushi, Ueji, Yoshinori, Fukuda, Kenji, Tsujimura, Masatoshi, Furukawa, Yukihiro, Hoshino, Taizo, Omote, Kazuhiko, Kawabata, Naoyuki

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Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals von Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Nakabayashi, Masashi, Tsuge, Hiroshi, Yashiro, Hirokatsu, Aigo, Takashi, Hirano, Hosei, Hoshino, Taizo, Ohashi, Wataru

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Abnormal Microsomal Detoxification Implicated in Fanconi Anemia Group C by Interaction of the FAC Protein With NADPH Cytochrome P450 Reductase von Kruyt, Frank A.E., Hoshino, Taizo, Liu, Johnson M., Joseph, Pius, Jaiswal, Anil K., Youssoufian, Hagop

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Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities von Nakabayashi, Masashi, Tsuge, Hiroshi, Ohtani, Noboru, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo, Tatsumi, Kohei

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Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates von Nakabayashi, Masashi, Ohashi, Wataru, Tsuge, Hiroshi, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Katsuno, Masakazu, Fujimoto, Tatsuo

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Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions von Nakabayashi, Masashi, Tsuge, Hiroshi, Ohtani, Noboru, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Katsuno, Masakazu, Fujimoto, Tatsuo, Tatsumi, Kohei

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Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality von Nakabayashi, Masashi, Ohashi, Wataru, Tsuge, Hiroshi, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Satoh, S., Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo

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Behavior of Basal Plane Dislocations in Hexagonal Silicon Carbide Single Crystals Grown by Physical Vapor Transport von Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo

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Molecular Chaperone GRP94 Binds to the Fanconi Anemia Group C Protein and Regulates Its Intracellular Expression von Hoshino, Taizo, Wang, Jianxiang, Devetten, Marcel P., Iwata, Nobuhisa, Kajigaya, Sachiko, Wise, Robert J., Liu, Johnson M., Youssoufian, Hagop

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4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness von Nakabayashi, Masashi, Sawamura, M., Tsuge, Hiroshi, Ohtani, Noboru, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Katsuno, Masakazu, Fujimoto, Tatsuo

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FAULT SYMPTOM DETECTION SYSTEM AND PROGRAM von ARAKI IKUNAO, HOSHINO TAIZO

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METHOD FOR POLISHING BOTH SURFACE OF SEMICONDUCTOR SUBSTRATE von HOSHINO TAIZO

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METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE von KATSUNO, Masakazu, YASHIRO, Hirokatsu, NAKABAYASHI, Masashi, FUJIMOTO, Tatsuo, HOSHINO, Taizo, AIGO, Takashi, TSUGE, Hiroshi

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