Resistance switch employing a simple metal nanogap junction von Naitoh, Yasuhisa, Horikawa, Masayo, Abe, Hidekazu, Shimizu, Tetsuo

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Additive Electron Pathway and Nonadditive Molecular Conductance by Using a Multipodal Bridging Compound von Kiguchi, Manabu, Takahashi, Yuuta, Fujii, Shintaro, Takase, Masayoshi, Narita, Tomoyuki, Iyoda, Masahiko, Horikawa, Masayo, Naitoh, Yasuhisa, Nakamura, Hisao

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Influence of electrode size on resistance switching effect in nanogap junctions von Suga, Hiroshi, Horikawa, Masayo, Odaka, Shunsuke, Miyazaki, Hisao, Tsukagoshi, Kazuhito, Shimizu, Tetsuo, Naitoh, Yasuhisa

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Resistance switch using metal nanogap electrodes in air von Suga, Hiroshi, Horikawa, Masayo, Kumaragurubaran, Somu, Furuta, Shigeo, Masuda, Yuichiro, Shimizu, Tetsuo, Naitoh, Yasuhisa

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Non-volatile high-speed resistance switching nanogap junction memory von Kumaragurubaran, Somu, Takahashi, Tsuyoshi, Masuda, Yuichiro, Furuta, Shegio, Sumiya, Torou, Ono, Masatoshi, Shimizu, Tetsuo, Suga, Hiroshi, Horikawa, Masayo, Naitoh, Yasuhisa

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Physical Model for High-to-Low Resistive Switching of Gold Nanogap Junction von Naitoh, Yasuhisa, Suga, Hiroshi, Horikawa, Masayo

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Nanomanipulation of Single Nanoparticle Using a Carbon Nanotube Probe in a Scanning Electron Microscope von Suga, Hiroshi, Naitoh, Yasuhisa, Tanaka, Miyuki, Horikawa, Masayo, Kobori, Hiromi, Shimizu, Tetsuo

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Non-volatile Resistance Switching using Single-Wall Carbon Nanotube Encapsulating Fullerene Molecules von Naitoh, Yasuhisa, Yanagi, Kazuhiro, Suga, Hiroshi, Horikawa, Masayo, Tanaka, Takeshi, Kataura, Hiromichi, Shimizu, Tetsuo

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Physical Model for High-to-Low Resistive Switching of Gold Nanogap Junction von Naitoh, Yasuhisa, Suga, Hiroshi, Horikawa, Masayo

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Effect of Gas Molecules on Resistance Switch Employing a Gold Nanogap Junction von Naitoh, Yasuhisa, Horikawa, Masayo, Shimizu, Tetsuo

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Threshold Current Density of the Resistance Switching in Pt Nanogap Electrode von Suga, Hiroshi, Sumiya, Touru, Horikawa, Masayo, Kumaragurubaran, Somu, Shimizu, Tetsuo, Naitoh, Yasuhisa

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Modeling and Testing of Molecular Wire Sensors To Detect a Nucleic Acid Base von Das, Bidisa, Abe, Shuji, Naitoh, Yasuhisa, Horikawa, Masayo, Yatabe, Tetsuo, Suzuki, Yasuzo, Funaki, Takashi, Tsuzuki, Seiji, Kawanishi, Yuji

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Non-Volatile Resistance Switching Using Silicon Nanogap Junction von Naitoh, Yasuhisa, Morita, Yukinori, Horikawa, Masayo, Suga, Hiroshi, Shimizu, Tetsuo

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Fabrication and Characterization of Decanedithiol Molecular Junction Using Nanogap Electrodes von Takahashi, Yuuta, Kiguchi, Manabu, Horikawa, Masayo, Naitoh, Yasuhisa, Tsutsui, Ken, Takagi, Hitoshi, Morita, Masayuki, Tokuda, Masahide, Ito, Yoshitoshi, Wada, Yasuo

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Fabrication and Characterization of Decanedithiol Molecular Junction Using Nanogap Electrodes von Takahashi, Yuuta, Kiguchi, Manabu, Horikawa, Masayo, Naitoh, Yasuhisa, Tsutsui, Ken, Takagi, Hitoshi, Morita, Masayuki, Tokuda, Masahide, Ito, Yoshitoshi, Wada, Yasuo

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Threshold Current Density of the Resistance Switching in Pt Nanogap Electrode von Suga, Hiroshi, Sumiya, Touru, Horikawa, Masayo, Kumaragurubaran, Somu, Shimizu, Tetsuo, Naitoh, Yasuhisa

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Influence of Substrate Structure on Resistance Switch Using Simple Metal Nanogap Junction von Naitoh, Yasuhisa, Horikawa, Masayo, Shimizu, Tetsuo

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ALD-ZrO2 gate dielectric with suppressed interfacial oxidation for high performance MoS2 top gate MOSFETs von Chang, Wen Hsin, Okada, Naoya, Horikawa, Masayo, Endo, Takahiko, Miyata, Yasumitsu, Irisawa, Toshifumi

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ALD-ZrO 2 gate dielectric with suppressed interfacial oxidation for high performance MoS 2 top gate MOSFETs von Chang, Wen Hsin, Okada, Naoya, Horikawa, Masayo, Endo, Takahiko, Miyata, Yasumitsu, Irisawa, Toshifumi

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Top-gate monolayer MoS2 MOSFETs with ZrO2 gate dielectrics formed by low temperature ALD von CHANG, WENHSIN, Okada, Naoya, Horikawa, Masayo, Endo, Takahiko, Miyata, Yasumitsu, Irisawa, Toshifumi

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