Influence of Counter-Layer Deposition Condition on Critical Current Spread in Interface-Modified Ramp-Edge Junction Arrays von Wakana, Hironori, Adachi, Seiji, Horibe, Masahiro, Ishimaru, Yoshihiro, Horibe, Osami, Tarutani, Yoshinobu, Tanabe, Keiichi

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Evaluation of fabrication process for interface-modified ramp-edge junctions von Suzuki, Toshiaki, Ishimaru, Yoshihiro, Horibe, Masahiro, Horibe, Osami, Wakana, Hironori, Adachi, Seiji, Oshikubo, Yasuo, Tarutani, Yoshinobu, Kawabe, Ushio, Tanabe, Keiichi

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Observation of Barrier Recrystallization Process and Properties of Ramp-Edge Josephson Junctions with Interface-Modified Barrier von Ishimaru, Yoshihiro, Wu, Yuan, Horibe, Osami, Tano, Hiroyoshi, Suzuki, Toshiaki, Tarutani, Yoshinobu, Kawabe, Ushio, Tanabe, Keiichi

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Hysteresis Control of Interface-Engineered Ramp-Edge Junctions for Single-Flux-Quantum Circuits von Horibe, Masahiro, Hato, Tunehiro, Wakana, Hironori, Ishimaru, Yoshihiro, Horibe, Osami, Adachi, Seiji, Tarutani, Yoshinobu, Tanabe, Keiichi

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Reflection high energy electron diffraction observation in recrystallization process of surface-modified barrier von Ishimaru, Yoshihiro, Wu, Yuan, Horibe, Osami, Tarutani, Yoshinobu, Tanabe, Keiichi

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Evaluation of fabrication process and barrier structure for interface-modified ramp-edge junctions von Ishimaru, Yoshihiro, Wu, Yuan, Horibe, Osami, Tano, Hiroyoshi, Suzuki, Toshiaki, Yoshida, Yuichi, Horibe, Masahiro, Wakana, Hironori, Adachi, Seiji, Takahashi, Yoshihiro, Oshikubo, Yasuo, Sugiyama, Hideyuki, Iiyama, Michitomo, Tarutani, Yoshinobu, Tanabe, Keiichi

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Improved Fabrication Process for Monolithic Integrated High-T c dc Superconducting Quantum Interference Devices von Ishimaru, Yoshihiro, Tarutani, Yoshinobu, Horibe, Osami, Oshikubo, Yasuo, Tanabe, Keiichi

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Fabrication and logic operation of oxide SFQ-circuit-components von Tarutani, Y., Ishimaru, Y., Wakana, H., Adachi, S., Nakayama, K., Oshikubo, Y., Horibe, O., Morimoto, Y., Tanabe, K.

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Development of multilayer process with upper wiring layer for HTS circuit application von Ishimaru, Yoshihiro, Ogura, Makoto, Horibe, Osami, Adachi, Seiji, Wakana, Hironori, Nakayama, Kohei, Tarutani, Yoshinobu, Kawabe, Ushio, Tanabe, Keiichi

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Design and Operation of HTS 1:2 Switch Circuit von Tsubone, K., Wakana, H., Tarutani, Y., Adachi, S., Ishimaru, Y., Nakayama, K., Oshikubo, Y., Horibe, O., Tanabe, K.

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Fabrication technique of ground-plane embedded in a PrBa2Cu3Ox film von Horibe, Masahiro, Ishimaru, Yoshihiro, Horibe, Osami, Wakana, Hironori, Tarutani, Yoshinobu, Tanabe, Keiichi

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Fabrication technique of ground-plane embedded in a PrBa 2Cu 3O x film von Horibe, Masahiro, Ishimaru, Yoshihiro, Horibe, Osami, Wakana, Hironori, Tarutani, Yoshinobu, Tanabe, Keiichi

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Relation between barrier structure and electrical properties of interface-modified ramp-edge junctions von Ishimaru, Yoshihiro, Wu, Yuan, Suzuki, Toshiaki, Horibe, Masahiro, Horibe, Osami, Wakana, Hironori, Adachi, Seiji, Tarutani, Yoshinobu, Tanabe, Keiichi

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Fabrication and characteristics of elementary oxide RSFQ circuits von Tarutani, Yoshinobu, Ishimaru, Yoshihiro, Wakana, Hironori, Horibe, Masahiro, Adachi, Seiji, Sugiyama, Hideyuki, Oshikubo, Yasuo, Horibe, Osami, Suzuki, Toshiaki, Tanabe, Keiichi

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Fabrication of interface elements for oxide RSFQ circuits von Tarutani, Y., Ishimaru, Y., Wakana, H., Horibe, M., Sugiyama, H., Adachi, S., Oshikubo, Y., Horibe, O., Suzuki, T., Tanabe, K., Kawabe, U.

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Uniformity evaluation method of the YBa sub(2)Cu sub(3)O sub(7-x) ramp-edge-junction characteristics for SFQ circuit application von Tarutani, Yoshinobu, Ishimaru, Yoshihiro, Wakana, Hironori, Horibe, Masahiro, Horibe, Osami, Sugiyama, Hideyuki, Iiyama, Michitomo, Adachi, Seiji, Oshikubo, Yasuo, Tano, Hiroyoshi, Suzuki, Toshiaki, Tanabe, Keiichi

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Uniformity evaluation method of the YBa2Cu3O7−x ramp–edge-junction characteristics for SFQ circuit application von Tarutani, Yoshinobu, Ishimaru, Yoshihiro, Wakana, Hironori, Horibe, Masahiro, Horibe, Osami, Sugiyama, Hideyuki, Iiyama, Michitomo, Adachi, Seiji, Oshikubo, Yasuo, Tano, Hiroyoshi, Suzuki, Toshiaki, Tanabe, Keiichi

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Uniformity evaluation method of the YBa 2Cu 3O 7− x ramp–edge-junction characteristics for SFQ circuit application von Tarutani, Yoshinobu, Ishimaru, Yoshihiro, Wakana, Hironori, Horibe, Masahiro, Horibe, Osami, Sugiyama, Hideyuki, Iiyama, Michitomo, Adachi, Seiji, Oshikubo, Yasuo, Tano, Hiroyoshi, Suzuki, Toshiaki, Tanabe, Keiichi

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Observation of barrier recrystallization process and properties of interface-modified ramp-edge Josephson junctions von Ishimaru, Yoshihiro, Wu, Yuan, Horibe, Osami, Tano, Hiroyoshi, Suzuki, Toshiaki, Tarutani, Yoshinobu, Kawabe, Ushio, Tanabe, Keiichi

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Development of multilayer process with upper wiring layer for HTS circuit application von ISHIMARU, Yoshihiro, OGURA, Makoto, HORIBE, Osami, ADACHI, Seiji, WAKANA, Hironori, NAKAYAMA, Kohei, TARUTANI, Yoshinobu, KAWABE, Ushio, TANABE, Keiichi

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