Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate von Chu, Jiayan, Wang, Quan, Jiang, Lijuan, Feng, Chun, Li, Wei, Liu, Hongxin, Xiao, Hongling, Wang, Xiaoliang

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Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs von Zhen, Zixin, Feng, Chun, Xiao, Hongling, Jiang, Lijuan, Li, Wei

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Properties Investigation and Damage Analysis of GaN Photoconductive Semiconductor Switch Based on SiC Substrate von Xu, Jiankai, Jiang, Lijuan, Cai, Ping, Feng, Chun, Xiao, Hongling, Wang, Xiaoliang

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Bibliometric analysis of functional dyspepsia research trends over the past 20 years von Wang, Xinai, Liu, Hao, Li, Wenjing, Xiao, Hongling

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Patient-reported outcome measures in functional dyspepsia: a systematic review and COSMIN analysis von Wang, Xinai, Fei, Yan, Li, Wenjing, Liu, Hao, Xiao, Hongling, Wu, Yaxuan, Wang, Chenqi

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A hypotensive protocol of inspiratory muscle strength training: Systematic review and meta-analysis with trial sequential analysis von Li, Wenjing, Zhu, Xiaoping, Wang, Xinai, Liu, Hao, Liu, Jingying, Xiao, Hongling, Dong, Liang, Wang, Chenqi, Wu, Yaxuan

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Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases von Junda, Yan, Wang, Xiaoliang, Feng, Chun, Xiao Hongling, Liu, Shiming, Gong Jiamin, Liu Fengqi, Li Baiquan

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Interventions for reducing blood pressure in prehypertension: A meta-analysis von Li, Wenjing, Liu, Hao, Wang, Xinai, Liu, Jingying, Xiao, Hongling, Wang, Chenqi, Wu, Yaxuan

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Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs von Chen, Changxi, Wang, Quan, Li, Wei, Wang, Qian, Feng, Chun, Jiang, Lijuan, Xiao, Hongling, Wang, Xiaoliang

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Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz von Wang, Quan, Chen, Changxi, Li, Wei, Qin, Yanbin, Jiang, Lijuan, Feng, Chun, Wang, Qian, Xiao, Hongling, Chen, Xiufang, Liu, Fengqi, Wang, Xiaoliang, Xu, Xiangang, Wang, Zhanguo

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Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer von Peng, Enchao, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan, Hou, Xun, Wang, Zhanguo

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Simulation of In0.65Ga0.35 N single-junction solar cell von Zhang, Xiaobin, Wang, Xiaoliang, Xiao, Hongling, Yang, Cuibai, Ran, Junxue, Wang, Cuimei, Hou, Qifeng, Li, Jinmin

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Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers von Peng, Enchao, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan, Hou, Xun, Wang, Zhanguo

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Telomerase Template Antagonist GRN163L Disrupts Telomere Maintenance, Tumor Growth, and Metastasis of Breast Cancer von HOCHREITER, Amelia E, HONGLING XIAO, GOLDBLATT, Erin M, GRYAZNOV, Sergei M, MILLER, Kathy D, BADVE, Sunil, SLEDGE, George W, HERBERT, Brittney-Shea

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The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT von Niu, Di, Wang, Quan, Li, Wei, Chen, Changxi, Xu, Jiankai, Jiang, Lijuan, Feng, Chun, Xiao, Hongling, Wang, Qian, Xu, Xiangang, Wang, Xiaoliang

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Two-dimensional electron and hole gases in InxGa1−xN/AlyGa1−yN/GaN heterostructure for enhancement mode operation von Junda, Yan, Wang, Quan, Qu Shenqi, Xiao Hongling, Peng Enchao, He, Kang, Wang Cuimei, Feng, Chun, Yin Haibo, Jiang Lijuan, Li Baiquan, Wang, Zhanguo, Hou Xun

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RETRACTED ARTICLE: Design of visual distance teaching platform based on Internet of things and embedded software system von Li, Zhongqi, Xiao, Hongling

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Growth and characterization of InGaN back barrier HEMTs structure with a compositionally step-graded AlGaN layer von Tang, Jian, Wang, Xiaoliang, Xiao, Hongling

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Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer von Pan, Xu, Wei, Meng, Yang, Cuibai, Xiao, Hongling, Wang, Cuimei, Wang, Xiaoliang

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Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1−xN/AlN)MQWs/GaN high electron mobility transistor von Li, Wei, Wang, Xiaoliang, Qu, Shenqi, Wang, Quan, Xiao, Hongling, Wang, Cuimei, Peng, Enchao, Hou, Xun, Wang, Zhanguo

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