Precise determination of electric field applied to charged materials in liquid via van der Pauw technique von Noh, Hyowoong, Park, Minsu, Lee, Junyeong, Bae, Ju-Hyun, Park, Honghwi, Kang, Geeyoon, Baek, Moon-Chang, Park, Hongsik

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Bridge-contact resistance method for precise evaluation of electrical contacts of nano-scale semiconductor devices von Yun, Jiyeong, Park, Byeong-Gyu, Jung, Huiyun, Lee, Jonghyung, Park, Youngjin, Kang, Geeyoon, Park, Honghwi, Park, Hongsik

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Influence of Amorphous-to-Crystalline Transformation on the Negative Thermo-Optic Properties of TiO2 Films von Park, Honghwi, Jung, Jaedong, Liu, Mingyuan, Lee, Sunghwan, Park, Hongsik

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Analytic model of spalling technique for thickness-controlled separation of single-crystalline semiconductor layers von Park, Honghwi, Lim, Changhee, Lee, Chang-Ju, Choi, Muhan, Jung, Sunghwan, Park, Hongsik

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Multimodal Encapsulation to Selectively Permeate Hydrogen and Engineer Channel Conduction for p‑Type SnO x Thin-Film Transistor Applications von Lee, Dong Hun, Zhang, Yuxuan, Chang, Sung-Jin, Park, Honghwi, Kim, Chung Soo, Baek, Jinwook, Park, Jeongmin, No, Kwangsoo, Song, Han Wook, Park, Hongsik, Lee, Sunghwan

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High-Performance Oxide-Based p-n Heterojunctions Integrating p-SnOx and n-InGaZnO von Lee, Dong Hun, Park, Honghwi, Clevenger, Michael, Kim, Hyeonghun, Kim, Chung Soo, Liu, Mingyuan, Kim, Giyong, Song, Han Wook, No, Kwangsoo, Kim, Sung Yeol, Ko, Dong-Kyun, Lucietto, Anne, Park, Hongsik, Lee, Sunghwan

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Factors Determining the Resistive Switching Behavior of Transparent InGaZnO‐Based Memristors von Qin, Fei, Zhang, Yuxuan, Park, Honghwi, Kim, Chung Soo, Lee, Dong Hun, Jiang, Zhong-Tao, Park, Jeongmin, No, Kwangsoo, Park, Hongsik, Song, Han Wook, Lee, Sunghwan

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Evaluation of the average grain size of polycrystalline graphene using an electrical characterization method von Park, Honghwi, Lee, Junyeong, Lee, Chang-Ju, Kim, Jaeeuk, Kang, Jaewoon, Noh, Hyowoong, Lee, Jonghyung, Park, Youngjin, Park, Jonghoo, Choi, Muhan, Park, Hongsik

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Effects of Thermally Induced Phase Transition on the Negative Thermo-Optic Properties of Atomic-Layer-Deposited TiO2 Films von Park, Honghwi, Jung, Jaedong, Zhang, Yuxuan, Liu, Mingyuan, Lee, Jonghyung, Noh, Hyowoong, Choi, Muhan, Lee, Sunghwan, Park, Hongsik

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Effects of Thermally Induced Phase Transition on the Negative Thermo-Optic Properties of Atomic-Layer-Deposited TiO 2 Films von Park, Honghwi, Jung, Jaedong, Zhang, Yuxuan, Liu, Mingyuan, Lee, Jonghyung, Noh, Hyowoong, Choi, Muhan, Lee, Sunghwan, Park, Hongsik

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Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique von Park, Honghwi, Won, Heungsup, Lim, Changhee, Zhang, Yuxuan, Han, Won Seok, Bae, Sung-Bum, Lee, Chang-Ju, Noh, Yeho, Lee, Junyeong, Lee, Jonghyung, Jung, Sunghwan, Choi, Muhan, Lee, Sunghwan, Park, Hongsik

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Circular resonator, and optical modulator and optical element comprising same von Choi, Muhan, Park, Honghwi, Park, Hongsik, Lee, Chang-Ju

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SUBSTRATE SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE von JUNGHEE LEE, HONGHWI PARK, HYOWOONG NOH, YOUNGJIN PARK, HONGSIK PARK

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SUBSTRATE METHOD OF MANUFACTURING THE SUBSTRATE SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE von JUNGHEE LEE, HYOWOONG NOH, YOUNGJIN PARK, HONGHWI PARK, HONGSIK PARK

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CIRCULAR RESONATOR, AND OPTICAL TRANSDUCER AND OPTICAL ELEMENT COMPRISING SAME von PARK, Hongsik, LEE, Chang-Ju, CHOI, Muhan, PARK, Honghwi

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