An Innovative Indicator to Evaluate DRAM Cell Transistor Leakage Current Distribution von Cho, Min Hee, Jeon, Namho, Kim, Taek Yong, Jeong, Moonyoung, Lee, Sungsam, Hong, Jong Seo, Hong, Hyeong Sun, Yamada, Satoru

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Robust Metal/AHO/HSG-Cylinder Capacitor Technology Using Diagonal Cell Array Scheme and Double Mold Oxide von Kim, Seong-Goo, Hyun, Chang-Suk, Park, Don, Cho, Tai-Heui, Moon, Hong-Joon, Kim, Hyun-Chul, Jung, Jae-Hwang, Kim, Sun-Joon, Kang, Hyuck-Jin, Jeong, Sang-Moo, Lee, Si-Woo, Lee, Sung-Hyun, Suk, Jong-Gyu, Jeon, Young-Soo, Jeon, Sang-Kil, Hong, Hyeong-Sun, Lee, Kang-Yoon, Oh, Kyung-Seok

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Fully integrated 512 Mb DRAMs with HSG-merged-AHO cylinder capacitor von Kim, Seong-Goo, Hyun, Chang-Suk, Park, Don, Cho, Tai-Heui, Suk, Jong-Gyu, Hong, Hyeong-Sun, Lee, Kang-Yoon, Oh, Kyung-Seok

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Fully integrated 512Mb DRAMs with HSG-merged-AHO cylinder capacitor von Kim, Seong-Goo, Hyun, Chang-Suk, Park, Don, Cho, Tai-Heui, Suk, Jong-Gyu, Hong, Hyeong-Sun, Lee, Kang-Yoon, Oh, Kyung-Seok

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Integrated circuit devices and methods of manufacturing same von Kim, Sung-woo, Hwang, Yoo-sang, Koh, Gwan-hyeob, Hong, Hyeong-sun, Suh, Ki-seok, Lee, Jae-Kyu

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Device comprising 2D material von Kim, Jin-bum, Park, Tae-jin, Lee, Kyu-pil, Hwang, Yoo-sang, Hong, Hyeong-sun, Kim, Bong-soo

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INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING SAME von LEE, Jae-Kyu, HWANG, Yoo-sang, SUH, Ki-seok, HONG, Hyeong-sun, KIM, Sung-woo, KOH, Gwan-hyeob

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Integrated circuit devices von Kim, Sung-woo, Lee, Jae-kyu, Hwang, Yoo-sang, Koh, Gwan-hyeob, Hong, Hyeong-sun, Suh, Ki-seok

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Halbleitervorrichtung von Yeom, Kye-Hee, Yoshida, Makoto, Hong, Hyeong-Sun

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INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING SAME von HWANG, Yoo-sang, SUH, Ki-seok, HONG, Hyeong-sun, KIM, Sung-woo, LEE, Jae-kyu, KOH, Gwan-hyeob

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Integrated circuit devices including separate memory cells on separate regions of individual substrate von Kim, Sung-woo, Lee, Jae-kyu, Hwang, Yoo-sang, Koh, Gwan-hyeob, Hong, Hyeong-sun, Suh, Ki-seok

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DEVICE COMPRISING 2D MATERIAL von Kim, Jin-bum, Park, Tae-jin, Lee, Kyu-pil, Hwang, Yoo-sang, Hong, Hyeong-sun, Kim, Bong-soo

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DEVICE COMPRISING 2D MATERIAL von Kim, Jin-bum, Lee, Kyu-pil, PARK, Tae-jin, Hwang, Yoo-sang, Hong, Hyeong-sun, Kim, Bong-soo

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INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING SAME von HWANG, Yoo-sang, SUH, Ki-seok, HONG, Hyeong-sun, KIM, Sung-woo, LEE, Jae-kyu, KOH, Gwan-hyeob

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Magnetic memory device von LEE SEO WON, KIM WOO JIN, MOON JUNG HWAN, HONG HYEONG SUN, BAK JUNG HOON

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Magnetic memory device von MOON JUNG-HWAN, KIM WOO-JIN, LEE SEO-WON, HONG HYEONG-SUN, PARK JEONG-HOON

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Semiconductor integrated circuit devices including gates having connection lines thereon von KIM BONG-SOO, SHIN SOO-HO, RYU HO-IN, HONG HYEONG-SUN

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MOS transistors including U shaped channels regions with separated protruding portions von KIM JI-YOUNG, KIM DAE-IK, HONG HYEONG-SUN

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Semiconductor device von Jang Hyeon-Woo, Cho Chang-Hyun, Yeom Kye-Hee, Park Sun-Young, Kim Keun-Nam, Hong Hyeong-Sun, Shin Soo-Ho, Jeong Jin-Won

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Vertical type integrated circuit devices and memory devices von HONG HYEONG SUN, HWANG DEOK SUNG, LEE CHUL, CHUN KWANG YOUL, YOSHIDA MAKOTO, YOON JAE MAN

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