Poly‐GeSn Junctionless Thin‐Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing von Zhang, Lu, Hong, Haiyang, Yu, Chunyu, Li, Cheng, Chen, Songyan, Huang, Wei, Wang, Jianyuan, Wang, Hao

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Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800-1650 nm detection von Huang, Zhiwei, Mao, Yichen, Chang, Ailing, Hong, Haiyang, Li, Cheng, Chen, Songyan, Huang, Wei, Wang, Jianyuan

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Multi-channel Prestack Attenuation Compensation Based on Low-Dimensional Manifold Model von Duan, Chengxiang, Zhang, Fanchang, Hong, Haiyang

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Shearing metal-organic framework lattice defects create low-resistance reservoir channels for high-performance aqueous organic flow battery von Cao, Hongyan, Xia, Yu, Wang, Junjie, Ji, Hengyu, Hong, Haiyang, Xu, Kenan, Huang, Kang, Liu, Gongping, Xu, Zhi

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Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique von Lin, Guangyang, Liang, Dongxue, Yu, Chunyu, Hong, Haiyang, Mao, Yichen, Li, Cheng, Chen, Songyan

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Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence von Zhang, Lu, Hong, Haiyang, Qian, Kun, Wu, Songsong, Lin, Guangyang, Wang, Jianyuan, Huang, Wei, Chen, Songyan, Li, Cheng

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Limitation of bulk GeSn alloy in the application of a high-performance laser due to the high threshold von Hong, Haiyang, Zhang, Lu, Qian, Kun, An, Yuying, Li, Cheng, Li, Jun, Chen, Songyan, Huang, Wei, Wang, Jianyuan, Zhang, Shuhong

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High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 μ m von Zhang, Lu, Hong, Haiyang, Li, Cheng, Chen, Songyan, Huang, Wei, Wang, Jianyuan, Wang, Hao

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Fabrication and modeling of SiGe and Ge nanowires on insulator by three-dimensional Ge condensation method von Lin, Guangyang, Liang, Dongxue, Yu, Chunyu, Hong, Haiyang, Mao, Yichen, Li, Cheng, Chen, Songyan, Zeng, Yuping

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High-specific-detectivity, low-dark-current Ge nanowire metal–semiconductor–metal photodetectors fabricated by Ge condensation method von Yu, Chunyu, Huang, Zhiwei, Lin, Guangyang, Mao, Yichen, Hong, Haiyang, Zhang, Lu, Zhao, Yimo, Wang, Jianyuan, Huang, Wei, Chen, Songyan, Li, Cheng

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Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate von Lin, Guangyang, Hong, Haiyang, Zhang, Jie, Zhang, Yuying, Cui, Peng, Wang, Jianyuan, Chen, Songyan, Zhao, Yong, Ni, Chaoying, Li, Cheng, Zeng, Yuping

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High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 m von Zhang, Lu, Hong, Haiyang, Li, Cheng, Chen, Songyan, Huang, Wei, Wang, Jianyuan, Wang, Hao

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Low-temperature plasma enhanced atomic layer deposition of large area HfS 2 nanocrystal thin films von Chang, Ailing, Mao, Yichen, Huang, Zhiwei, Hong, Haiyang, Xu, Jianfang, Huang, Wei, Chen, Songyan, Li, Cheng

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Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin filmsProject supported by the National Key Research and Development Program of China (Gr... von Chang, Ailing, Mao, Yichen, Huang, Zhiwei, Hong, Haiyang, Xu, Jianfang, Huang, Wei, Chen, Songyan, Li, Cheng

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Growth mechanism identification of sputtered single crystalline bismuth nanowire von Hong, Haiyang, Zhang, Lu, Yu, Chunyu, Zhang, Ziqi, Li, Cheng, Chen, Songyan, Huang, Wei, Wang, Jianyuan, Xu, Jianfang

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Correction to: Growth mechanism identification of sputtered single crystalline bismuth nanowire von Hong, Haiyang, Zhang, Lu, Yu, Chunyu, Zhang, Ziqi, Li, Cheng, Chen, Songyan, Huang, Wei, Wang, Jianyuan, Xu, Jianfang

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An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices von Chi, Xiaowei, Lan, Xiaoling, Lu, Chao, Hong, Haiyang, Li, Cheng, Chen, Songyan, Lai, Hongkai, Huang, Wei, Xu, Jianfang

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An improvement of HfO 2 /Ge interface by in situ remote N 2 plasma pretreatment for Ge MOS devices von Chi, Xiaowei, Lan, Xiaoling, Lu, Chao, Hong, Haiyang, Li, Cheng, Chen, Songyan, Lai, Hongkai, Huang, Wei, Xu, Jianfang

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An improvement of HfO sub(2)/Ge interface by in situ remote N sub(2) plasma pretreatment for Ge MOS devices von Chi, Xiaowei, Lan, Xiaoling, Lu, Chao, Hong, Haiyang, Li, Cheng, Chen, Songyan, Lai, Hongkai, Huang, Wei, Xu, Jianfang

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Full-automatic seed soaking equipment von HONG HAIYANG

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