Symmetries and the polarized optical spectra of exciton complexes in quantum dots von Dupertuis, M A, Karlsson, K F, Oberli, D Y, Pelucchi, E, Rudra, A, Holtz, P O, Kapon, E

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Spectral change of intermediate band luminescence in GaP:N due to below‐gap excitation: Discrimination from thermal activation von Kamata, N., Suetsugu, M., Haque, D., Yagi, S., Yaguchi, H., Karlsson, F., Holtz, P. O.

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Spectral signatures of high-symmetry quantum dots and effects of symmetry breaking von Karlsson, K F, Oberli, D Y, Dupertuis, M A, Troncale, V, Byszewski, M, Pelucchi, E, Rudra, A, Holtz, P O, Kapon, E

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Improvement of Crystalline and Photoluminescence of Atomic Layer Deposited m‑Plane ZnO Epitaxial Films by Annealing Treatment von Yang, S, Lin, B. H, Kuo, C. C, Hsu, H. C, Liu, W.-R, Eriksson, M. O, Holtz, P.-O, Chang, C.-S, Hsu, C.-H, Hsieh, W. F

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Excitons and biexcitons in InGaN quantum dot like localization centers von Amloy, S, Karlsson, K F, Eriksson, M O, Palisaitis, J, Persson, P O Å, Chen, Y T, Chen, K H, Hsu, H C, Hsiao, C L, Chen, L C, Holtz, P O

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Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy von Chen, Y. T., Karlsson, K. F., Birch, J., Holtz, P. O.

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InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids von Lundskog, A, Palisaitis, J, Hsu, C W, Eriksson, M, Karlsson, K F, Hultman, L, Persson, P O, Forsberg, U, Holtz, P O, Janzén, E

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Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD von Lundskog, Anders, Hsu, C.W., Nilsson, D., Karlsson, K.F., Forsberg, U., Holtz, P.O., Janzén, E.

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Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity von Eriksson, M. O., Khromov, S., Paskov, P. P., Wang, X., Yoshikawa, A., Holtz, P. O., Monemar, B., Darakchieva, V.

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Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition von Zhao, Q. X., Liu, X. J., Holtz, P. O.

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Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot von Amloy, S., Moskalenko, E. S., Eriksson, M., Karlsson, K. F., Chen, Y. T., Chen, K. H., Hsu, H. C., Hsiao, C. L., Chen, L. C., Holtz, P. O.

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Photoluminescence study of basal plane stacking faults in ZnO nanowires von Khranovskyy, V., Eriksson, M.O., Radnoczi, G.Z., Khalid, A., Zhang, H., Holtz, P.O., Hultman, L., Yakimova, R.

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Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film von Yang, S., Hsu, H. C., Liu, W.-R., Lin, B. H., Kuo, C. C., Hsu, C.-H., Eriksson, M. O., Holtz, P. O., Hsieh, W. F.

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Genetic analysis of osteogenesis imperfecta in a large Brazilian cohort von Holtz, A.P., Souza, L.T., Ribeiro, E.M., Acosta, A.X., Lago, R.M.R.S., Simoni, G., Llerena, J.C., Félix, T.M.

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Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy von Höglund, Linda, Petrini, E., Asplund, C., Malm, H., Andersson, J.Y., Holtz, P.O.

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Polarized photoluminescence study of free and bound excitons in free-standing GaN von PASKOV, P. P, PASKOVA, T, HOLTZ, P. O, MONEMAR, B

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Size dependent biexciton binding energies in GaN quantum dots von Amloy, S., Yu, K. H., Karlsson, K. F., Farivar, R., Andersson, T. G., Holtz, P. O.

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Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix von Zhuravlev, K. S., Aleksandrov, I. A., Holtz, P.-O.

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On the polarized emission from exciton complexes in GaN quantum dots von Amloy, S., Karlsson, K. F., Andersson, T. G., Holtz, P. O.

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Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots von Paskov, P. P., Holtz, P. O., Monemar, B., Garcia, J. M., Schoenfeld, W. V., Petroff, P. M.

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