Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections von Gaspard, N. J., Jagannathan, S., Diggins, Z. J., King, M. P., Wen, S-J., Wong, R., Loveless, T. D., Lilja, K., Bounasser, M., Reece, T., Witulski, A. F., Holman, W. T., Bhuva, B. L., Massengill, L. W.

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Impact of Single-Event Transient Duration and Electrical Delay at Reduced Supply Voltages on SET Mitigation Techniques von Maharrey, J. A., Kauppila, J. S., Harrington, R. C., Nsengiyumva, P., Ball, D. R., Haeffner, T. D., Zhang, E. X., Bhuva, B. L., Holman, W. T., Massengill, L. W.

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On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology von Loveless, T. D., Kauppila, J. S., Jagannathan, S., Ball, D. R., Rowe, J. D., Gaspard, N. J., Atkinson, N. M., Blaine, R. W., Reece, T. R., Ahlbin, J. R., Haeffner, T. D., Alles, M. L., Holman, W. T., Bhuva, B. L., Massengill, L. W.

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Single-Event Upset Characterization Across Temperature and Supply Voltage for a 20-nm Bulk Planar CMOS Technology von Kauppila, J. S., Kay, W. H., Haeffner, T. D., Rauch, D. L., Assis, T. R., Mahatme, N. N., Gaspard, N. J., Bhuva, B. L., Alles, M. L., Holman, W. T., Massengill, L. W.

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Effect of Device Variants in 32 nm and 45 nm SOI on SET Pulse Distributions von Maharrey, J. A., Quinn, R. C., Loveless, T. D., Kauppila, J. S., Jagannathan, S., Atkinson, N. M., Gaspard, N. J., Zhang, E. X., Alles, M. L., Bhuva, B. L., Holman, W. T., Massengill, L. W.

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Single-Event Performance of Sense-Amplifier Based Flip-Flop Design in a 16-nm Bulk FinFET CMOS Process von Jiang, H., Zhang, H., Assis, T. R., Narasimham, B., Bhuva, B. L., Holman, W. T., Massengill, L. W.

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Impact of Process Variations and Charge Sharing on the Single-Event-Upset Response of Flip-Flops von Kauppila, A. V., Bhuva, B. L., Massengill, L. W., Holman, W. T., Ball, D. R.

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A Hardened-by-Design Technique for RF Digital Phase-Locked Loops von Loveless, T.D., Massengill, L.W., Bhuva, B.L., Holman, W.T., Witulski, A.F., Boulghassoul, Y.

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Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation von Jagannathan, S., Loveless, T. D., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Haeffner, T. D., Kauppila, J. S., Mahatme, N., Bhuva, B. L., Alles, M. L., Holman, W. T., Witulski, A. F., Massengill, L. W.

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Impact of Process Variations on SRAM Single Event Upsets von Kauppila, A V, Bhuva, B L, Kauppila, J S, Massengill, L W, Holman, W T

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Demonstration of a Differential Layout Solution for Improved ASET Tolerance in CMOS A/MS Circuits von Armstrong, S E, Olson, B D, Holman, W T, Warner, J, McMorrow, D, Massengill, L W

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Differential Charge Cancellation (DCC) Layout as an RHBD Technique for Bulk CMOS Differential Circuit Design von Blaine, R. W., Atkinson, N. M., Kauppila, J. S., Armstrong, S. E., Hooten, N. C., Warner, J. H., Holman, W. T., Massengill, L. W.

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RHBD Bias Circuits Utilizing Sensitive Node Active Charge Cancellation von Blaine, R. W., Armstrong, S. E., Kauppila, J. S., Atkinson, N. M., Olson, B. D., Holman, W. T., Massengill, L. W.

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Single-Event Analysis and Hardening of Mixed-Signal Circuit Interfaces in High-Speed Communications Devices von Armstrong, S. E., Blaine, R. W., Holman, W. T., Massengill, L. W.

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Digital Control for Radiation-Hardened Switching Converters in Space von Adell, P C, Witulski, A F, Schrimpf, R D, Baronti, F, Holman, W T, Galloway, K F

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Radiation Hardened by Design Subsampling Phase-Locked Loop Techniques in PD-SOI von Richards, Ellis W., Loveless, T. D., Kauppila, J. S., Haeffner, T. D., Holman, W. T., Massengill, L. W.

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Single-Event Transient Error Characterization of a Radiation-Hardened by Design 90 nm SerDes Transmitter Driver von Armstrong, S.E., Olson, B.D., Popp, J., Braatz, J., Loveless, T.D., Holman, W.T., McMorrow, D., Massengill, L.W.

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Frequency Dependence of Heavy-Ion-Induced Single-Event Responses of Flip-Flops in a 16-nm Bulk FinFET Technology von Zhang, H., Jiang, H., Bhuva, B. L., Kauppila, J. S., Holman, W. T., Massengill, L. W.

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Dual-Interlocked Logic for Single-Event Transient Mitigation von Maharrey, J. A., Kauppila, J. S., Harrington, R. C., Nsengiyumva, P., Ball, D. R., Haeffner, T. D., Zhang, E. X., Bhuva, B. L., Holman, W. T., Massengill, L. W.

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Modeling Total-Dose Effects for a Low-Dropout Voltage Regulator von Ramachandran, V., Narasimham, B., Fleetwood, D.M., Schrimpf, R.D., Holman, W.T., Witulski, A.F., Pease, R.L., Dunham, G.W., Seiler, J.E., Platteter, D.G.

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