Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges von Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., Chua, C. L., Collazo, R., Coltrin, M. E., Cooper, J. A., Evans, K. R., Graham, S., Grotjohn, T. A., Heller, E. R., Higashiwaki, M., Islam, M. S., Juodawlkis, P. W., Khan, M. A., Koehler, A. D., Leach, J. H., Mishra, U. K., Nemanich, R. J., Pilawa‐Podgurski, R. C. N., Shealy, J. B., Sitar, Z., Tadjer, M. J., Witulski, A. F., Wraback, M., Simmons, J. A.

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III-nitride vertical hot electron transistor with polarization doping and collimated injection von Daulton, J. W., Molnar, R. J., Brinkerhoff, J. A., Hollis, M. A., Zaslavsky, A.

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Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors von Daulton, J. W., Molnar, R. J., Brinkerhoff, J. A., Weir, T. J., Hollis, M. A., Zaslavsky, A.

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Controlling the carrier density of surface conductive diamond von Geis, M.W., Hollis, M.A., Turner, G.W., Daulton, J., Varghese, J.O., Klyukin, K., Wang, J., Yildiz, B., Zhang, B.

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Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance von Wade, T., Geis, M.W., Fedynyshyn, T.H., Vitale, S.A., Varghese, J.O., Lennon, D.M., Grotjohn, T.A., Nemanich, R.J., Hollis, M.A.

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Hydrogen and deuterium termination of diamond for low surface resistance and surface step control von Geis, M.W., Varghese, J.O., Vardi, Alon, Kedzierski, J., Daulton, J., Calawa, D., Hollis, M.A., Wuorio, C.H., Turner, G.W., Warnock, S.M., Osadchy, T., Mallek, J., Melville, A., del Alamo, Jesus A., Zhang, Beijia

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A B Cell-Based Sensor for Rapid Identification of Pathogens von Rider, Todd H., Petrovick, Martha S., Nargi, Frances E., Harper, James D., Schwoebel, Eric D., Mathews, Richard H., Blanchard, David J., Bortolin, Laura T., Young, Albert M., Chen, Jianzhu, Hollis, Mark A.

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Picosecond GaAs-based photoconductive optoelectronic detectors von SMITH, F. W, LE, H. Q, DIADIUK, V, HOLLIS, M. A, CALAWA, A. R, GUPTA, S, FRANKEL, M, DYKAAR, D. R, MOUROU, G. A, HSIANG, T. Y

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Direct detection of nucleic acid hybridization on the surface of a charge coupled device von Lamture, Jagannath B., LBeattie, Kenneth, Burke, Barry E., Eggers, Mitchell D., Ehrlich, Dan J., Fowler, Rick, Hollis, Mark A., Kosicki, Bernard B., Reich, Robert K., Smith, Sean R., Varma, Rajender S., Hogan, Michael E.

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GaN hot electron transistors: From ballistic to coherent von Daulton, J.W., Molnar, R.J., Brinkerhoff, J.A., Adamson, Z.C., Hollis, M.A., Zaslavsky, A.

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Chemical and semiconducting properties of NO2-activated H-terminated diamond von Geis, M.W., Fedynyshyn, T.H., Plaut, M.E., Wade, T.C., Wuorio, C.H., Vitale, S.A., Varghese, J.O., Grotjohn, T.A., Nemanich, R.J., Hollis, M.A.

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Space-Charge Impedance in Photodiodes von Hollis, M. A.

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Errors versus speed on the trail making test: Relevance to driving performance von Duncanson, Haley, Hollis, Ann M., O’Connor, Margaret G.

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Can we improve clinical prediction of at-risk older drivers? von Bowers, Alex R., Anastasio, R. Julius, Sheldon, Sarah S., O’Connor, Margaret G., Hollis, Ann M., Howe, Piers D., Horowitz, Todd S.

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Importance of electron scattering with coupled plasmon-optical phonon modes in GaAs planar-doped barrier transistors von Hollis, M.A., Palmateer, S.C., Eastman, L.F., Dandekar, N.V., Smith, P.M.

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Oppression at trade school von Hollis, Maree A.

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Effects of interface traps on the transconductance and drain current of InP MISFET's von Chen, C.-L., Calawa, A.R., Courtney, W.E., Mahoney, L.J., Palmateer, S.C., Manfra, M.J., Hollis, M.A.

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Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film von Geis, M.W., Varghese, J.O., Hollis, M.A., Yichen, Y., Nemanich, R.J., Wuorio, C.H., Zhang, Xi, Turner, G.W., Warnock, S.M., Vitale, S.A., Molnar, R.J., Osadchy, T., Zhang, B.

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18.5-dB Gain at 18 GHz with a GaAs permeable base transistor von Bozler, C.O., Hollis, M.A., Nichols, K.B., Rabe, S., Vera, A., Chen, C.L.

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Chemical and semiconducting properties of NO^sub 2^-activated H-terminated diamond von Geis, MW, Fedynyshyn, TH, Plauta, ME, Wade, TC, Wuorio, CH, Vitale, SA, Varghese, JO, Grotjohn, TA, Nemanich, RJ, Hollis, MA

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