Mechanical fatigue measurement via a vibrating cantilever beam for self-supported thin solid films von WANG, Y.-C, HOECHBAUER, T, SWADENER, J. G, MISRA, A, HOAGLAND, R. G, NASTASI, M

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Influence of interfaces on the storage of ion-implanted He in multilayered metallic composites von Höchbauer, T., Misra, A., Hattar, K., Hoagland, R. G.

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Nanostructured Cu/Nb multilayers subjected to helium ion-irradiation von Zhang, X., Li, Nan, Anderoglu, O., Wang, H., Swadener, J.G., Höchbauer, T., Misra, A., Hoagland, R.G.

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Study of the crystalline quality of exfoliated surfaces in hydrogen-implanted silicon von Breese, M. B. H., Alves, L. C., Hoechbauer, T., Nastasi, M.

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Depth profiling of hydrogen in crystalline silicon using elastic recoil detection analysis von Verda, R.D., Maggiore, C.J., Tesmer, J.R., Misra, A., Hoechbauer, T., Nastasi, M., Bower, R.W.

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Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding von Zheng, Y., Moran, P. D., Guan, Z. F., Lau, S. S., Hansen, D. M., Kuech, T. F., Haynes, T. E., Hoechbauer, T., Nastasi, M.

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Investigation of plasma hydrogenation and trapping mechanism for layer transfer von Chen, Peng, Chu, Paul K., Höchbauer, T., Lee, J.-K., Nastasi, M., Buca, D., Mantl, S., Loo, R., Caymax, M., Alford, T., Mayer, J. W., Theodore, N. David, Cai, M., Schmidt, B., Lau, S. S.

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Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator von Di, Zengfeng, Huang, Anping, Fu, Ricky K. Y., Chu, Paul K., Shao, Lin, Höchbauer, T., Nastasi, M., Zhang, Miao, Liu, Weili, Shen, Qinwo, Luo, Suhua, Song, Zhitang, Lin, Chenglu

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Microwave enhanced ion-cut silicon layer transfer von Thompson, D. C., Alford, T. L., Mayer, J. W., Höchbauer, T., Lee, J. K., Nastasi, M., Lau, S. S., Theodore, N. David, Chu, Paul K.

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Hydrogen blister depth in boron and hydrogen coimplanted n -type silicon von Höchbauer, T., Nastasi, M., Mayer, J. W.

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Erratum to “Depth profiling of hydrogen in crystalline silicon using elastic recoil detection analysis” [Nucl. Instr. and Meth. B 183 (2001) 401–412] von Verda, R.D, Maggiore, C.J, Tesmer, J.R, Misra, A, Hoechbauer, T, Nastasi, M, Bower, R.W

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Plasma hydrogenation of strain-relaxed SiGe∕Si heterostructure for layer transfer von Chen, Peng, Chu, Paul K., Höchbauer, T., Nastasi, M., Buca, D., Mantl, S., Theodore, N. David, Alford, T. L., Mayer, J. W., Loo, R., Caymax, M., Cai, M., Lau, S. S.

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Substrate carrier, method and processing device von HOECHBAUER TOBIAS FRANZ WOLFGANG

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반도체 기판의 제조 및 재사용 von BINTER ALEXANDER CHRISTIAN, MODER IRIS, SANTOS RODRIGUEZ FRANCISCO JAVIER, HUBER MARTIN, SCHULZE HANS JOACHIM, GOLLER BERNHARD, HOECHBAUER TOBIAS FRANZ WOLFGANG, PICCIN MATTEO

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Nucleation and growth of platelets in hydrogen-ion-implanted silicon von Nastasi, Michael, Höchbauer, Tobias, Lee, Jung-Kun, Misra, Amit, Hirth, John P., Ridgway, Mark, Lafford, Tamzin

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Method of Manufacturing Silicon Carbide Device and Wafer Composite Including Laser Modified Zones in Handle Substrate von LEHNERT WOLFGANG, RUPP ROLAND, HOECHBAUER TOBIAS FRANZ WOLFGANG, DRAGHICI MIHAI, PICCIN MATTEO

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Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices von Krippendorf, Florian, Schustereder, Werner, Akhmadaliev, Shavkat, Rupp, Roland, Csato, Constantin, Höchbauer, Tobias, Kern, Ronny, von Borany, Johannes, Rüb, Michael

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METHODS FOR PROCESSING A SEMICONDUCTOR SUBSTRATE von SCHUSTEREDER WERNER, HOECHBAUER TOBIAS F W, LEHNERT WOLFGANG, BREYMESSER ALEXANDER, SCHULZE HANS-JOACHIM, SWOBODA MARKO D, DRAGHICI MIHAI

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SEMICONDUCTOR DEVICE WITH A POROUS PORTION, WAFER COMPOSITE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE von MODER IRIS, SANTOS RODRIGUEZ FRANCISCO JAVIER, SCHULZE HANS-JOACHIM, GOLLER BERNHARD, HOECHBAUER TOBIAS FRANZ WOLFGANG, RUPP ROLAND

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Role of strain in the blistering of hydrogen-implanted silicon von Lee, Jung-Kun, Lin, Yuan, Jia, Q. X., Höchbauer, Tobias, Jung, Hyun Suk, Shao, Lin, Misra, Amit, Nastasi, Michael

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