100 mm 4HN-SiC Wafers with Zero Micropipe Density von Tsvetkov, Valeri F., Zilli, R., Leonard, R.T., Khlebnikov, I., Paisley, Michael J., Malta, D.P., Powell, Adrian R., Carter Jr, Calvin H., Jenny, Jason R., Hobgood, H.McD, Basceri, C., Brady, M.F., Khlebnikov, Y., Balakrishna, Vijay, Deyneka, E.

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Characterization of polishing-related surface damage in (0001) silicon carbide substrates von QIAN, W, SKOWRONSKI, M, AUGUSTINE, G, GLASS, R. C, HOBGOOD, J. M, HOPKINS, R. H

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High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport von Thomas, R.N., Rohatgi, A., Augustine, G., McD. Hobgood, H., Balakrishna, Vijay, Dunne, Greg, Doolittle, W.A., Hopkins, R.H.

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High-purity semi-insulating 4H-SiC for microwave device applications von JENNY, J. R, MALTA, D. P, MÜLLER, St. G, POWELL, A. R, TSVETKOV, V. F, HOBGOOD, H. Mcd, GLASS, R. C, CARTER, C. H

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Defect Status in SiC Manufacturing von Burk, Albert A., Khlebnikov, I., Tsvetkov, Valeri F., Leonard, R.T., Paisley, Michael J., O'Loughlin, Michael J., Malta, D.P., Powell, Adrian R., Carter Jr, Calvin H., Hobgood, H.McD, Brady, M.F., Basceri, C., Berkman, Elif, Khlebnikov, Y., Balakrishna, Vijay, Balkas, C., Sumakeris, Joseph J., Deyneka, E.

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Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices von Jenny, Jason R., Calus, M.R., Tsvetkov, Valeri F., McD. Hobgood, H., Glass, R.C., Malta, D.P., Müller, Stephan G., Powell, Adrian R., Carter Jr, Calvin H.

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Semi-insulating 6H–SiC grown by physical vapor transport von Hobgood, H. McD, Glass, R. C., Augustine, G., Hopkins, R. H., Jenny, J., Skowronski, M., Mitchel, W. C., Roth, M.

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Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances von Jenny, Jason R., Brady, M.F., McD. Hobgood, H., Calus, M.R., Tsvetkov, Valeri F., Leonard, R.T., Glass, R.C., Malta, D.P., Müller, Stephan G., Powell, Adrian R., Carter Jr, Calvin H.

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Sublimation-Grown Semi-Insulating SiC for High Frequency Devices von McD. Hobgood, H., Tsvetkov, Valeri F., Leonard, R.T., Malta, D.P., Brixius, W.H., Müller, Stephan G., Powell, Adrian R., Carter Jr, Calvin H., Jenny, Jason R., Brady, M.F., Glass, R.C., Allen, S.T., Palmour, John W.

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The formation of super-dislocation/micropipe complexes in 6H-SiC von Giocondi, J, Rohrer, G S, Skowronski, M, Balakrishna, V, Augustine, G, Hobgood, H Mc D, Hopkins, R H

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Large Diameter 4H-SiC Substrates for Commercial Power Applications von Burk, Albert A., Brady, M.F., Tsvetkov, Valeri F., McD. Hobgood, H., Leonard, R.T., Trussell, R., Glass, R.C., Müller, Stephan G., Sumakeris, Joseph J., Powell, Adrian R., Carter Jr, Calvin H.

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High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production von Brixius, W.H., McD. Hobgood, H., Tsvetkov, Valeri F., Leonard, R.T., Malta, D.P., Müller, Stephan G., Powell, Adrian R., Carter Jr, Calvin H., Jenny, Jason R., Brady, M.F., Henshall, D., Fechko, G., Glass, R.C., Allen, S.T., Palmour, John W.

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Defects in SiC substrates and epitaxial layers affecting semiconductor device performance von Müller, St. G., Sumakeris, J. J., Brady, M. F., Glass, R. C., Hobgood, H. McD, Jenny, J. R., Leonard, R., Malta, D. P., Paisley, M. J., Powell, A. R., Tsvetkov, V. F., Allen, S. T., Das, M. K., Palmour, J. W., Carter, C. H.

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Boron acceptor levels in 6H-SiC bulk samples von Evwaraye, A. O., Smith, S. R., Mitchel, W. C., Hobgood, H. McD

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Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H–SiC von Konovalov, V.V, Zvanut, M.E, Tsvetkov, V.F, Jenny, J.R, Müller, St.G, Hobgood, H.McD

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Deep Levels in SiC:V by High Temperature Transport Measurements von Solomon, J.S., McD. Hobgood, H., Perrin, Ronald, Ahoujja, M., Smith, S.R., Jenny, Jason R., Roth, Matthew D., Augustine, G., Landis, G., Balakrishna, Vijay, Mitchel, W.C., Evwaraye, A.O., Goldstein, Jonathan

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Thermal Activation Energies for the Three Inequivalent Lattice Sites for the BSi Acceptor in 6H-SiC von Mitchel, W.C., Evwaraye, A.O., McD. Hobgood, H., Augustine, G., Smith, S.R., Balakrishna, Vijay

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Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective von Müller, St.G., Brady, M.F., Burk, A.A., Hobgood, H.McD, Jenny, J.R., Leonard, R.T., Malta, D.P., Powell, A.R., Sumakeris, J.J., Tsvetkov, V.F., Carter, C.H.

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Thermal activation energies for the three inequivalent lattice sites for the B(Si) acceptor in 6H-SiC von Evwaraye, A O, Smith, S R, Mitchel, W C, Hobgood, H Mc D, Augustine, G, Balakrishna, V

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Physical vapor transport growth and properties of sic monocrystals of 4H polytype: Fundamental questions and applications of SiC (Part I) von AUGUSTINE, G, HOBGOOD, H. MC. D, BALAKRISHNA, V, DUNNE, G, HOPKINS, R. H

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