Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the... von HLALI, SLAH, HIZEM, NEILA, KALBOUSSI, ADEL

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Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics von Hlali, Slah, Hizem, Neila, Militaru, Liviu, Kalboussi, Adel, Souifi, Abdelkader

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High temperature and voltage dependent electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure von Hlali, Slah, Farji, Abdelaali, Hizem, Neila, Militaru, Liviu, Kalboussi, Adel, Souifi, Abdelkader

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High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics von Hlali, Slah, Hizem, Neila, Kalboussi, Adel

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Charge density at the Al{sub 2}O{sub 3}/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions von Hlali, Slah, Hizem, Neila, Kalboussi, Adel

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Charge Density at the [Al.sub.2][O.sub.3]/Si Interface in Metal--Insulator--Semiconductor Devices: Semiclassical and Quantum Mechanical Descriptions von Hlali, Slah, Hizem, Neila, Kalboussi, Adel

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Charge density at the Al2O3/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions von Hlali, Slah, Hizem, Neila, Kalboussi, Adel

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