High-power surface emitting semiconductor laser with extended vertical compound cavity von McInerney, J.G., Mooradian, A., Lewis, A., Shchegrov, A.V., Strzelecka, E.M., Lee, D., Watson, J.P., Liebman, M., Carey, G.P., Cantos, B.D., Hitchens, W.R., Heald, D.

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Tantalum oxide thin films for dielectric applications by low-pressure chemical vapor deposition : physical and electrical properties von HITCHENS, W. R, KRUSELL, W. C, DOBKIN, D. M

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GaAs MESFET device dependences on ion-implant tilt and rotation angles von Rosemblatt, D.H., Hitchens, W.R., Anholt, R.E., Sigmon, T.W.

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The Matched Feedback Amplifier: Ultrawide-Band Microwave Amplification with GaAs MESFET's von Niclas, K.B., Wilser, W.T., Gold, R.B., Hitchens, W.R.

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High-power surface emitting semiconductor laser with extended vertical compound cavity von McInerney, J G, Mooradian, A, Lewis, A, Shchegrov, A V, Strzelecka, E M, Lee, D, Watson, J P, Liebman, M, Carey, G P, Cantos, B D, Hitchens, W R, Heald, D

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A 12-18 GHz medium-power GaAs MESFET amplifier von Niclas, K.B., Gold, R.B., Wilser, W.T., Hitchens, W.R.

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Tantalum oxide thin films for dielectric applications by low-pressure chemical vapor deposition von Hitchens, W R, Krusell, W C, Dobkin, D M

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The direct-indirect transition in In1− xGaxP von Lee, M.H., Holonyak, N., Hitchens, W.R., Campbell, J.C., Altarelli, M.

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Highly selective citric buffer etch-stop process for the manufacture of very uniform GaAs/AlGaAs FETs von Schmukler, B.C., Brunemeier, P.E., Hitchens, W.R., Cantos, B.D., Strifler, W.A., Rosenblatt, D.H., Remba, R.D.

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Application of the Two-Way Balanced Amplifier Concept to Wide-Band Power Amplification Using GaAs MESFET's von Niclas, K.B., Wilser, W.T., Gold, R.B., Hitchens, W.R.

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Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxP von Hitchens, W.R., Holonyak, N., Lee, M.H., Campbell, J.C.

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Pressure experiment determination of the direct-indirect transition in the quarternary In1−xGaxP1−zAsz von Nelson, R.J., Holonyak, N., Hitchens, W.R., Lazarus, D., Altarelli, M.

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Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxP von Hitchens, W

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Low-threshold LPE In1− x ′Ga x ′P1− z ′ As z ′/In1− x Ga x P1− z As z /In1− x ′ Ga x ′P1− z ′As z ′ yellow double-heterojunction laser diodes ( J <104 A/cm2, λ∼5850 Å, 77 °K)... von Hitchens, W. R., Holonyak, N., Wright, P. D., Coleman, J. J.

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IIA-4 Low threshold LPE In(1-x' < /inf > , Ga(x' < /inf > , P(1-z' < /inf > , As(z' < /inf > , /In(1-x < /inf > Ga(x < /inf > P(1-z < /inf > As(z < /inf > /In(1-x' < /inf > , Ga(x... von Hitchens, W R, Holonyak, N, Wright, P D, Coleman, J J

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Liquid phase epitaxial In1− x Ga x P1− z As z /GaAs1− y P y quaternary (LPE)-ternary (VPE) heterojunction lasers ( x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K) von Coleman, J. J., Hitchens, W. R., Holonyak, N., Ludowise, M. J., Groves, W. O., Keune, D. L.

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Liquid phase epitaxial (LPE) grown junction In1− x Ga x P ( x ∼0.63) laser of wavelength λ∼5900 Å (2.10 eV, 77°K) von Hitchens, W. R., Holonyak, N., Lee, M. H., Campbell, J. C., Coleman, J. J., Groves, W. O., Keune, D. L.

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Crystal and luminescence properties of constant-temperature liquid-phase-expitaxial In1− x Ga x P (x [inverted lazy s]0.7) grown on (100) GaAs1− x P x  (x [inverted lazy s]0.4)... von Macksey, H. M., Lee, M. H., Holonyak, N., Hitchens, W. R., Dupuis, R. D., Campbell, J. C.

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Luminescence, laser, and carrier-lifetime behavior of constant-temperature LPE In1− x Ga x P ( x =0.52) grown on (100) GaAs von Campbell, J. C., Hitchens, W. R., Holonyak, N., Lee, M. H., Ludowise, M. J., Coleman, J. J.

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Liquid phase epitaxial /LPE/ grown junction In/1-x/Ga/x/P /x approximately equal to 0.63/ laser of wavelength approximately equal to 5900 A /2.10 eV, 77 K von Hitchens, W R, HOLONYAK, N, J R, Lee, M H, Coleman, J J, Groves, W O, Keune, D L, Campbell, J C

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