Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture) von Amano, Hiroshi

Volltext

The emergence and prospects of deep-ultraviolet light-emitting diode technologies von Kneissl, Michael, Seong, Tae-Yeon, Han, Jung, Amano, Hiroshi

Volltext

Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials von Amano, Hiroshi

Volltext

A 271.8 nm deep-ultraviolet laser diode for room temperature operation von Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

Volltext

III-Nitride Based Light Emitting Diodes and Applications

Volltext

Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation (Nobel Lecture) von Amano, Hiroshi

Volltext

Factors Affecting the Outcomes of Double-Bundle Medial Patellofemoral Ligament Reconstruction for Recurrent Patellar Dislocations Evaluated by Multivariate Analysis von Kita, Keisuke, Tanaka, Yoshinari, Toritsuka, Yukiyoshi, Amano, Hiroshi, Uchida, Ryohei, Takao, Rikio, Horibe, Shuji

Volltext

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate von Usami, Shigeyoshi, Ando, Yuto, Tanaka, Atsushi, Nagamatsu, Kentaro, Deki, Manato, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Sugawara, Yoshihiro, Yao, Yong-Zhao, Ishikawa, Yukari

Volltext

Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing von Zhang, Ziyi, Kushimoto, Maki, Yoshikawa, Akira, Aoto, Koji, Sasaoka, Chiaki, Schowalter, Leo J., Amano, Hiroshi

Volltext

Inactivation characteristics of a 280 nm Deep-UV irradiation dose on aerosolized SARS-CoV-2 von Takamure, Kotaro, Iwatani, Yasumasa, Amano, Hiroshi, Yagi, Tetsuya, Uchiyama, Tomomi

Volltext

Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation von Amano, Hiroshi

Volltext

Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes von Zhang, Ziyi, Kushimoto, Maki, Horita, Masahiro, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

Volltext

Importance of functional performance and psychological readiness for return to preinjury level of sports 1 year after ACL reconstruction in competitive athletes von Kitaguchi, Takuya, Tanaka, Yoshinari, Takeshita, Shinya, Tsujimoto, Nozomi, Kita, Keisuke, Amano, Hiroshi, Kinugasa, Kazutaka, Tachibana, Yuta, Natsuume, Takashi, Horibe, Shuji

Volltext

Characteristics of collection and inactivation of virus in air flowing inside a winding conduit equipped with 280 nm deep UV-LEDs von Takamure, Kotaro, Sakamoto, Yasuaki, Iwatani, Yasumasa, Amano, Hiroshi, Yagi, Tetsuya, Uchiyama, Tomomi

Volltext

Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection von Zhang, Ziyi, Kushimoto, Maki, Yoshikawa, Akira, Aoto, Koji, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

Volltext

Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers von Matsukura, Yusuke, Inazu, Tetsuhiko, Pernot, Cyril, Shibata, Naoki, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Amano, Hiroshi

Volltext

Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode von Akasaki, Isamu, Amano, Hiroshi

Volltext

Direct Anterior Cruciate Ligament Insertion to the Femur Assessed by Histology and 3-Dimensional Volume-Rendered Computed Tomography von Iwahashi, Takehiko, M.D., Ph.D, Shino, Konsei, M.D., Ph.D, Nakata, Ken, M.D., Ph.D, Otsubo, Hidenori, M.D, Suzuki, Tomoyuki, M.D, Amano, Hiroshi, M.D, Nakamura, Norimasa, M.D., Ph.D

Volltext

MOVPE growth and high-temperature annealing of (101¯0) AlN layers on (101¯0) sapphire von Dinh, Duc V., Amano, Hiroshi, Pristovsek, Markus

Volltext

Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes von Kim, Dae-Hyun, Park, Young Soo, Kang, Daesung, Kim, Kyoung-Kook, Seong, Tae-Yeon, Amano, Hiroshi

Volltext