Cluster ion control by simultaneous irradiations of femtosecond laser and nanosecond laser pulses von Kamada, H, Hiratani, Y, Toyoda, K

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Thermal decomposition of triethylgallium on variously reconstructed GaAs (111)B surfaces von OHKI, Y, HIRATANI, Y, SASAKI, M

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a-Si:H/SiO2 multilayer films fabricated by radio-frequency magnetron sputtering for optical filters von Yoda, Hidehiko, Shiraishi, Kazuo, Hiratani, Yuji, Hanaizumi, Osamu

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Stability of GaAs oxide under metalorganic molecular beam epitaxy process von Hiratani, Y., Sasaki, M., Yoshida, S., Yamada, M.

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Mass spectrometric study of the reaction of trimethylgallium and GaAs von Ohki, Y., Hiratani, Y.

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In-situ selective-area epitaxy of GaAs using a GaAs oxide layer as a mask von Hiratani, Y., Ohki, Y., Sugimoto, Y., Akita, K.

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A noise-robust echo canceller on V830 multimedia RISC processor integrated into a car navigation system von Hiratani, Y., Hirano, A., Kanazawa, M.

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Power handling capability of dielectric-coated, metallic, hollow waveguides for CO2 laser light von HIRATANI, Y, MIYAGI, M, NISHIDA, S

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Cluster ion control by simultaneous irradiations of femtosecond laser and nanosecond laser pulses von KAMADA, H, HIRATANI, Y, TOYODA, K

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In-situ selective-area epitaxy of a GaAs-based heterostructure using a GaAs oxide layer as a mask von Hiratani, Yuji, Ohki, Yoshimasa, Sasaki, Masahiro

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Temperature dependence of the reflected trimethylgallium flux intensity from a GaAs surface in metal-organic molecular beam epitaxy measured by mass spectrometry von OHKI, Y, HIRATANI, Y

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Mass spectrometric study of the reaction sof trimethylgallium and GaAs von OHKI, Y, HIRATANI, Y

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Analysis of GaAs MOMBE reactions by mass spectrometry von OHKI, Y, HIRATANI, Y, YAMADA, M

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Selective area epitaxy of GaAs using GaAs oxide as a mask von HIRATANI, Y, OHKI, Y, SUGIMOTO, Y, AKITA, K, TANEYA, M, HIDAKA, H

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Mass spectrometric studies on the decomposition of trialkylgallium on gaas surfaces von Ohki, Yoshimasa, Hiratani, Yuji

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Large difference in the decomposition rate of metalorganics between on As- and Ga-saturated GaAs (111)B surfaces von Ohki, Yoshimasa, Hiratani, Yuji, Sasaki, Masahiro

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1.48 mu m high-power GaInAsP-InP graded-index separate-confinement-heterostructure multiple-quantum-well laser diodes von Namegaya, T., Katsumi, R., Iwai, N., Namiki, S., Kasukawa, A., Kiratani, Y., Kikuta, T.

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In Situ Mass Spectrometric Analysis of the Mechanism of Selective-Area Epitaxy by MOMBE von Ohki, Y, Hiratani, Y

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Power handling capability of dielectric-coated, metallic, hollow waveguides for CO 2 laser light von Hiratani, Y., Miyagi, M., Nishida, S.

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New fabrication method for 1.3-μm GaInAsP/InP buried crescent lasers using a reactive ion beam etching technique von KASUKAWA, A, IWASE, M, HIRATANI, Y, MATSUMOTO, N, IKEGAMI, Y, IRIKAWA, M, KASHIWA, S

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