Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate von Hirano, Hosei, Yano, Takayuki, Tani, Komomo, Sato, Shinya, Katsuno, Masakazu, Fujimoto, Tatsuo, Tsuge, Hiroshi, Ushio, Shoji

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“Zero-power” positioning actuator for cryogenic environments by combining magnetostrictive bimetal and HTS von Ghodsi, Mojtaba, Ueno, Toshiyuki, Teshima, Hidekazu, Hirano, Hosei, Higuchi, Toshiro, Summers, Eric

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Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications von Yashiro, Hirokatsu, Hoshino, Taizo, Nakabayashi, Masashi, Katsuno, Masakazu, Tatsumi, Kohei, Ohtani, Noboru, Hirano, Hosei, Tsuge, Hiroshi, Fujimoto, Tatsuo, Aigo, Takashi

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Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers von Nakabayashi, Masashi, Yashiro, Hirokatsu, Hoshino, Taizo, Katsuno, Masakazu, Hirano, Hosei, Tsuge, Hiroshi, Fujimoto, Tatsuo, Aigo, Takashi, Ohashi, Wataru, Satoh, S.

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Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates von Nakabayashi, Masashi, Yashiro, Hirokatsu, Hoshino, Taizo, Katsuno, Masakazu, Ohtani, Noboru, Hirano, Hosei, Tsuge, Hiroshi, Fujimoto, Tatsuo, Aigo, Takashi, Ohashi, Wataru

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Investigation of heavily nitrogen-doped n + 4H–SiC crystals grown by physical vapor transport von Ohtani, Noboru, Katsuno, Masakazu, Nakabayashi, Masashi, Fujimoto, Tatsuo, Tsuge, Hiroshi, Yashiro, Hirokatsu, Aigo, Takashi, Hirano, Hosei, Hoshino, Taizo, Tatsumi, Kohei

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Low-thermal-conductive DyBaCuO bulk superconductor for current lead application von FUJISHIRO, Hiroyuki, IKEBE, Manabu, TESHIMA, Hidekazu, HIRANO, Hosei

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A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals von Yashiro, Hirokatsu, Katsuno, Masakazu, Hirano, Hosei, Yano, Takayuki, Tsuge, Hiroshi, Sato, Shinya, Fujimoto, Tatsuo

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Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals von Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Nakabayashi, Masashi, Tsuge, Hiroshi, Yashiro, Hirokatsu, Aigo, Takashi, Hirano, Hosei, Hoshino, Taizo, Ohashi, Wataru

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Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals von Yashiro, Hirokatsu, Katsuno, Masakazu, Hirano, Hosei, Yano, Takayuki, Tsuge, Hiroshi, Sato, Shinya, Fujimoto, Tatsuo, Ohashi, Wataru

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Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities von Nakabayashi, Masashi, Yashiro, Hirokatsu, Hoshino, Taizo, Katsuno, Masakazu, Tatsumi, Kohei, Ohtani, Noboru, Hirano, Hosei, Tsuge, Hiroshi, Fujimoto, Tatsuo, Aigo, Takashi

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Numerical Modeling of Iron Yoke Levitation Using the Pinning Effect of High-Temperature Superconductors von Ghodsi, M., Ueno, T., Teshima, H., Hirano, H., Higuchi, T.

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Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality von Nakabayashi, Masashi, Yashiro, Hirokatsu, Hoshino, Taizo, Katsuno, Masakazu, Hirano, Hosei, Tsuge, Hiroshi, Fujimoto, Tatsuo, Aigo, Takashi, Ohashi, Wataru, Satoh, S.

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Power semiconductor device von HIRANO HOSEI

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Development of RE-Ba-Cu-O Bulk Current Leads von TESHIMA, Hidekazu, MORITA, Mitsuru, HIRANO, Hosei

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Critical current of Y-Ba-Cu-O bulk current leads von Teshima, H., Morita, M., Hirano, H.

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POWER SEMICONDUCTOR DEVICE von HIRANO HOSEI

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250 A-Class Y-Ba-Cu-O Bulk Current Leads Usable in 0.5T-77K von TESHIMA, Hidekazu, HIRANO, Hosei, FUJISHIRO, Hiroyuki

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250 A-Class Y-Ba-Cu-O Bulk Current Leads Usable in 0.5 T-77 K von TESHIMA, Hidekazu, HIRANO, Hosei, FUJISHIRO, Hiroyuki

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Finite Element Analysis of Thermal and Mechanical Behaviors in Fault Current Limiter Model With QMG Bulk Superconductors von Kajikawa, K., Takahashi, Y., Enpuku, K., Funaki, K., Hayashi, H., Morita, M., Hirano, H.

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