TM- and TE-polarization-selective narrowband perfect absorber for near-ultraviolet light using Fano resonance in an aluminum nanohole array structure von Akatsuka, Karen, Hiramatsu, Kazumasa, Motogaito, Atsushi

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Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing von Miyake, Hideto, Lin, Chia-Hung, Tokoro, Kenta, Hiramatsu, Kazumasa

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Fabrication of perfect plasmonic absorbers for blue and near-ultraviolet lights using double-layer wire-grid structures von Motogaito, Atsushi, Tanaka, Ryoga, Hiramatsu, Kazumasa

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Fabrication and Operation Analysis of a Surface-Plasmon Sensor Using a Nonpropagating Mode von Motogaito, Atsushi, Harada, Akitaka, Hiramatsu, Kazumasa

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Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy von Yoshizawa, Ryo, Miyake, Hideto, Hiramatsu, Kazumasa

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Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire von Miyake, Hideto, Nishio, Gou, Suzuki, Shuhei, Hiramatsu, Kazumasa, Fukuyama, Hiroyuki, Kaur, Jesbains, Kuwano, Noriyuki

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Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle von Fukuyama, Hiroyuki, Miyake, Hideto, Nishio, Gou, Suzuki, Shuhei, Hiramatsu, Kazumasa

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Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions von Lin, Chia-Hung, Yamashita, Yasuhiro, Miyake, Hideto, Hiramatsu, Kazumasa

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Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells von Murotani, Hideaki, Akase, Daiki, Anai, Koji, Yamada, Yoichi, Miyake, Hideto, Hiramatsu, Kazumasa

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Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations von Kurai, Satoshi, Miyake, Hideto, Hiramatsu, Kazumasa, Yamada, Yoichi

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Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates von Okada, Shunsuke, Iwai, Hiroki, Miyake, Hideto, Hiramatsu, Kazumasa

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Fabrication and characterization of plasmonic band-stop filter using Ag grating von Motogaito, Atsushi, Tanaka, Ryoga, Hiramatsu, Kazumasa

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Fabrication of Polarization Control Devices Using Metal Grating Structures von Motogaito, Atsushi, Hayashi, Yukino, Watanabe, Akinori, Hiramatsu, Kazumasa

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High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy von Kitagawa, Shin, Miyake, Hideto, Hiramatsu, Kazumasa

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Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration von Kurai, Satoshi, Ushijima, Fumitaka, Miyake, Hideto, Hiramatsu, Kazumasa, Yamada, Yoichi

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A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction AlxGa1−xN multiple quantum wells von Kojima, Kazunobu, Furusawa, Kentaro, Yamazaki, Yoshiki, Miyake, Hideto, Hiramatsu, Kazumasa, Chichibu, Shigefusa F.

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Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media von Motogaito, Atsushi, Nakamura, Shohei, Miyazaki, Jyun, Miyake, Hideto, Hiramatsu, Kazumasa

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Extraordinary Optical Transmission Exhibited by Surface Plasmon Polaritons in a Double-Layer Wire Grid Polarizer von Motogaito, Atsushi, Morishita, Yuuta, Miyake, Hideto, Hiramatsu, Kazumasa

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Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61Ga0.39N Epitaxial Layer von Murotani, Hideaki, Ikeda, Kazuki, Tsurumaru, Takuto, Fujiwara, Ryota, Kurai, Satoshi, Miyake, Hideto, Hiramatsu, Kazumasa, Yamada, Yoichi

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High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells von Murotani, Hideaki, Nakamura, Katsuto, Fukuno, Tomonori, Miyake, Hideto, Hiramatsu, Kazumasa, Yamada, Yoichi

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