3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity von Imanishi, Shoichiro, Horikawa, Kiyotaka, Oi, Nobutaka, Okubo, Satoshi, Kageura, Taisuke, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Figure of merit of diamond power devices based on accurately estimated impact ionization processes von Hiraiwa, Atsushi, Kawarada, Hiroshi

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High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al2O3 von Daicho, Akira, Saito, Tatsuya, Kurihara, Shinichiro, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications von Kawarada, Hiroshi, Yamada, Tetsuya, Xu, Dechen, Tsuboi, Hidetoshi, Kitabayashi, Yuya, Matsumura, Daisuke, Shibata, Masanobu, Kudo, Takuya, Inaba, Masafumi, Hiraiwa, Atsushi

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Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN von Hiraiwa, Atsushi, Sasaki, Toshio, Okubo, Satoshi, Horikawa, Kiyotaka, Kawarada, Hiroshi

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Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films von Hiraiwa, Atsushi, Saito, Tatsuya, Matsumura, Daisuke, Kawarada, Hiroshi

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Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation von Oi, Nobutaka, Kudo, Takuya, Inaba, Masafumi, Okubo, Satoshi, Onoda, Shinobu, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors von Oi, Nobutaka, Inaba, Masafumi, Okubo, Satoshi, Tsuyuzaki, Ikuto, Kageura, Taisuke, Onoda, Shinobu, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Space-charge-controlled field emission model of current conduction through Al2O3 films von Hiraiwa, Atsushi, Matsumura, Daisuke, Kawarada, Hiroshi

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Refractory two-dimensional hole gas on hydrogenated diamond surface von Hiraiwa, Atsushi, Daicho, Akira, Kurihara, Shinichiro, Yokoyama, Yuki, Kawarada, Hiroshi

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Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001) von Kono, Shozo, Kageura, Taisuke, Hayashi, Yuya, Ri, Sung-Gi, Teraji, Tokuyuki, Takeuchi, Daisuke, Ogura, Masahiko, Kodama, Hideyuki, Sawabe, Atsuhito, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Statistical-noise effect on discrete power spectrum of line-edge and line-width roughness von Hiraiwa, Atsushi, Nishida, Akio

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Vertical edge graphite layer on recovered diamond (001) after high‐dose ion implantation and high‐temperature annealing von Inaba, Masafumi, Seki, Akinori, Sato, Kazuaki, Kushida, Tomoyoshi, Kageura, Taisuke, Yamano, Hayate, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Blocking characteristics of diamond junctions with a punch-through design

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Statistical Model of Line-Edge and Line-Width Roughness for Device Variability Analysis von Hiraiwa, A, Nishida, A, Mogami, T

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Very low Schottky barrier height at carbon nanotube and silicon carbide interface von Inaba, Masafumi, Suzuki, Kazuma, Shibuya, Megumi, Lee, Chih-Yu, Masuda, Yoshiho, Tomatsu, Naoya, Norimatsu, Wataru, Hiraiwa, Atsushi, Kusunoki, Michiko, Kawarada, Hiroshi

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Statistical-noise effect on autocorrelation function of line-edge and line-width roughness von Hiraiwa, Atsushi, Nishida, Akio

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Space-charge-controlled field emission analysis of current conduction in amorphous and crystallized atomic-layer-deposited Al2O3 on GaN von Hiraiwa, Atsushi, Horikawa, Kiyotaka, Kawarada, Hiroshi

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Ultra-Shallow Junction Formation by Non-Melt Laser Spike Annealing and its Application to Complementary Metal Oxide Semiconductor Devices in 65-nm Node von Shima, Akio, Hiraiwa, Atsushi

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Power Spectrum of Smoothed Line-Edge and Line-Width Roughness von Hiraiwa, Atsushi, Nishida, Akio

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