Figure of merit of diamond power devices based on accurately estimated impact ionization processes von Hiraiwa, Atsushi, Kawarada, Hiroshi

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3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity von Imanishi, Shoichiro, Horikawa, Kiyotaka, Oi, Nobutaka, Okubo, Satoshi, Kageura, Taisuke, Hiraiwa, Atsushi, Kawarada, Hiroshi

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High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al2O3 von Daicho, Akira, Saito, Tatsuya, Kurihara, Shinichiro, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications von Kawarada, Hiroshi, Yamada, Tetsuya, Xu, Dechen, Tsuboi, Hidetoshi, Kitabayashi, Yuya, Matsumura, Daisuke, Shibata, Masanobu, Kudo, Takuya, Inaba, Masafumi, Hiraiwa, Atsushi

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Statistical-noise effect on discrete power spectrum of line-edge and line-width roughness von Hiraiwa, Atsushi, Nishida, Akio

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Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN von Hiraiwa, Atsushi, Sasaki, Toshio, Okubo, Satoshi, Horikawa, Kiyotaka, Kawarada, Hiroshi

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Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films von Hiraiwa, Atsushi, Saito, Tatsuya, Matsumura, Daisuke, Kawarada, Hiroshi

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Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation von Oi, Nobutaka, Kudo, Takuya, Inaba, Masafumi, Okubo, Satoshi, Onoda, Shinobu, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors von Oi, Nobutaka, Inaba, Masafumi, Okubo, Satoshi, Tsuyuzaki, Ikuto, Kageura, Taisuke, Onoda, Shinobu, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Space-charge-controlled field emission model of current conduction through Al2O3 films von Hiraiwa, Atsushi, Matsumura, Daisuke, Kawarada, Hiroshi

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Refractory two-dimensional hole gas on hydrogenated diamond surface von Hiraiwa, Atsushi, Daicho, Akira, Kurihara, Shinichiro, Yokoyama, Yuki, Kawarada, Hiroshi

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Statistical-noise effect on autocorrelation function of line-edge and line-width roughness von Hiraiwa, Atsushi, Nishida, Akio

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A survived case of penetrating neck injury with intrathoracic organ damage von Kagimoto, Atsushi, Mimura, Takeshi, Hiraiwa, Nanami, Yamashita, Yoshinori

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Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001) von Kono, Shozo, Kageura, Taisuke, Hayashi, Yuya, Ri, Sung-Gi, Teraji, Tokuyuki, Takeuchi, Daisuke, Ogura, Masahiko, Kodama, Hideyuki, Sawabe, Atsuhito, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Power Spectrum of Smoothed Line-Edge and Line-Width Roughness von Hiraiwa, Atsushi, Nishida, Akio

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Image-Noise Effect on Discrete Power Spectrum of Line-Edge and Line-Width Roughness von Hiraiwa, Atsushi

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Power Spectrum of Smoothed Line-Edge and Line-Width Roughness von Hiraiwa, Atsushi, Nishida, Akio

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Normally-Off C-H Diamond MOSFETs With Partial C-O Channel Achieving 2-kV Breakdown Voltage von Kitabayashi, Yuya, Kudo, Takuya, Tsuboi, Hidetoshi, Yamada, Tetsuya, Dechen Xu, Shibata, Masanobu, Matsumura, Daisuke, Hayashi, Yuya, Syamsul, Mohd, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Ultra-Shallow Junction Formation by Non-Melt Laser Spike Annealing and its Application to Complementary Metal Oxide Semiconductor Devices in 65-nm Node von Shima, Akio, Hiraiwa, Atsushi

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Enhancement of Drain Current in Planar MOSFETs by Dopant Profile Engineering Using Nonmelt Laser Spike Annealing von Shima, A., Mine, T., Torii, K., Hiraiwa, A.

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