Nb 9-Layer Fabrication Process for Superconducting Large-Scale SFQ Circuits and Its Process Evaluation von NAGASAWA, Shuichi, HINODE, Kenji, SATOH, Tetsuro, HIDAKA, Mutsuo, AKAIKE, Hiroyuki, FUJIMAKI, Akira, YOSHIKAWA, Nobuyuki, TAKAGI, Kazuyoshi, TAKAGI, Naofumi

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Hydrogen-inclusion-induced variation of critical current in Nb–AlOx–Nb Josephson junctions von Hinode, Kenji, Satoh, Tetsuro, Nagasawa, Shuichi, Hidaka, Mutsuo

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Resistivity Increase in Ultrafine-Line Copper Conductor for ULSIs von Hinode, Kenji, Hanaoka, Yuko, Takeda, Ken-ichi, Kondo, Seiichi

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Improvements in Fabrication Process for Nb-Based Single Flux Quantum Circuits in Japan von HIDAKA, Mutsuo, NAGASAWA, Shuichi, HINODE, Kenji, SATOH, Tetsuro

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Design of all-dc-powered high-speed single flux quantum random access memory based on a pipeline structure for memory cell arrays von Nagasawa, Shuichi, Hinode, Kenji, Satoh, Tetsuro, Kitagawa, Yoshihiro, Hidaka, Mutsuo

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Passivation effect of silicon nitride against copper diffusion von Miyazaki, Hiroshi, Kojima, Hisao, Hinode, Kenji

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Control of photocorrosion in the copper damascene process von HOMMA, Y, KONDO, S, SAKUMA, N, HINODE, K, NOGUCHI, J, OHASHI, N, YAMAGUCHI, H, OWADA, N

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Annealing Effect on Structural Defects in Low-Dose Separation-by-Implanted-Oxygen Wafers von Tamura, Masao, Ishimaru, Manabu, Hinode, Kenji, Tokiguchi, Katsumi, Seki, Hirohumi, Mori, Hirotaro

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Copper-induced dielectric breakdown in silicon oxide deposited by plasma-enhanced chemical vapor deposition using trimethoxysilane von Takeda, Ken-ichi, Ryuzaki, Daisuke, Mine, Toshiyuki, Hinode, Kenji, Yoneyama, Ryo

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Fabrication of reliable via conductors for niobium SFQ devices von Hinode, Kenji, Satoh, Tetsuro, Nagasawa, Shuichi, Kitagawa, Yoshihiro, Hidaka, Mutsuo

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Planarized multi-layer fabrication technology for LTS large-scale SFQ circuits von Nagasawa, Shuichi, Hinode, Kenji, Sugita, Masao, Satoh, Tetsuro, Akaike, Hiroyuki, Kitagawa, Yoshihiro, Hidaka, Mutsuo

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Straightforward planarization method for multilayered SFQ device fabrication von Hinode, Kenji, Nagasawa, Shuichi, Sugita, Masao, Satoh, Tetsuro, Akaike, Hiroyuki, Kitagawa, Yoshihiro, Hidaka, Mutsuo

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Origin of hydrogen-inclusion-induced critical current deviation in Nb/AlOx/Al/Nb Josephson junctions von Hinode, Kenji, Satoh, Tetsuro, Nagasawa, Shuichi, Hidaka, Mutsuo

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High-resolution temperature measurement of void dynamics induced by electromigration in aluminum metallization von Kondo, Seiichi, Hinode, Kenji

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Fabrication of Superconducting Qubits With Al Trilayer Josephson Junctions von Satoh, T., Noguchi, Y., Yamagishi, M., Nagasawa, S., Hinode, K., Hidaka, M., Maezawa, M., Horikawa, T.

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Fast electromigration-lifetime prediction of Al-based layered metallization using the similarity of resistance increase curve von KONDO, S, DEGUCHI, O, HINODE, K

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Hydrogen-inclusion-induced variation of critical current in Nb - AlO x - Nb Josephson junctions von Hinode, Kenji, Satoh, Tetsuro, Nagasawa, Shuichi, Hidaka, Mutsuo

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Origin of hydrogen-inclusion-induced critical current deviation in Nb / AlO x / Al / Nb Josephson junctions von Hinode, Kenji, Satoh, Tetsuro, Nagasawa, Shuichi, Hidaka, Mutsuo

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Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection von Takeda, Ken-ichi, Hinode, Kenji, Noguchi, Junji, Yamaguchi, Hizuru

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Thermographic analysis of electromigration phenomena in aluminum metallization von Kondo, Seiichi, Ogasawara, Koutaro, Hinode, Kenji

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