Investigating the mechanism of SiO2/4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO2 von Wang, Runze, Noguchi, Munetaka, Hino, Shiro, Kita, Koji

Volltext

Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm2 SiC-MOSFET von Yamakawa, Satoshi, Imaizumi, Masayuki, Hino, Shiro, Ito, Masanao, Miura, Naruhisa

Volltext

Investigating the mechanism of SiO 2 /4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO 2 von Wang, Runze, Noguchi, Munetaka, Hino, Shiro, Kita, Koji

Volltext

Effect of Oxidant in MOCVD-Growth of Al2O3 Gate Insulator on 4H-SiC MOSFET Properties von Moriya, Hitoshi, Tokumitsu, Eisuke, Hino, Shiro, Oomori, Tatsuo, Miura, Naruhisa

Volltext

Suppression of Short-Circuit Current with Embedded Source Resistance in SiC-MOSFET von Hatta, Hideyuki, Hino, Shiro, Miura, Naruhisa, Tominaga, Takaaki, Tomohisa, Shingo, Yamakawa, Satoshi

Volltext

Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial \hbox Layer Between \hbox\hbox and SiC von Hatayama, Tomohiro, Hino, Shiro, Miura, Naruhisa, Oomori, Tatsuo, Tokumitsu, Eisuke

Volltext

Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD von Mitsui, Yohei, Kawahara, Koutarou, Miura, Naruhisa, Tominaga, Takaaki, Hino, Shiro, Nakashima, Junichi, Tomohisa, Shingo

Volltext

3.3 kV/1500 A power modules for the world’s first all-SiC traction inverter von Hamada, Kenji, Hino, Shiro, Miura, Naruhisa, Watanabe, Hiroshi, Nakata, Shuhei, Suekawa, Eisuke, Ebiike, Yuji, Imaizumi, Masayuki, Umezaki, Isao, Yamakawa, Satoshi

Volltext

Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs von Iwamatsu, Toshiaki, Nakata, Shuhei, Sadamatsu, Koji, Kawahara, Koutarou, Yamakawa, Satoshi, Hino, Shiro, Nakao, Yukiyasu, Tomohisa, Shingo

Volltext

Demonstration of SiC-MOSFET embedding Schottky barrier diode for inactivation of parasitic body diode von Hino, S., Hatta, H., Sadamatsu, K., Nagahisa, Y., Yamamoto, S., Iwamatsu, T., Yamamoto, Y., Imaizumi, M., Nakata, S., Yamakawa, S.

Volltext

Characterization of Hafnium Oxide Thin Films by Source Gas Pulse Introduced Metalorganic Chemical Vapor Deposition Using Amino-Family Hf Precursors von Hino, Shiro, Nakayama, Makoto, Takahashi, Kenji, Funakubo, Hiroshi, Tokumitsu, Eisuke

Volltext

Source Gas Pulse-Introduced MOCVD of HfO[sub 2] Thin Films using Hf(O-t-C[sub 4]H[sub 9])[sub 4] von Nakayama, Makoto, Takahashi, Kenji, Hino, Shiro, Funakubo, Hiroshi, Tokumitsu, Eisuke

Volltext

Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal--Oxide--Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V von Hamada, Kenji, Miura, Naruhisa, Hino, Shiro, Kawakami, Tsuyoshi, Imaizumi, Masayuki, Sumitani, Hiroaki, Oomori, Tatsuo

Volltext

Investigation of the Robust Edge Termination Applied to 6.5kV SiC MOSFET von Nagae, Akemi, Watanabe, Hiroshi, Sadamatsu, Koji, Kawahara, Koutarou, Yamakawa, Satoshi, Ebihara, Kohei, Hino, Shiro, Nakao, Yukiyasu

Volltext

Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm super(2) SiC-MOSFET von Hino, Shiro, Ito, Masanao, Miura, Naruhisa, Imaizumi, Masayuki, Yamakawa, Satoshi

Volltext

Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC von Yamakawa, Satoshi, Watanabe, Tomokatsu, Imaizumi, Masayuki, Hino, Shiro, Ebiike, Yuji, Miura, Naruhisa

Volltext

Method for fabricating silicon carbide semiconductor device and power conversion device using the silicon carbide semiconductor device von Hino, Shiro, Sadamatsu, Koji

Volltext bestellen

3.3 kV/1500 A power modules for the world's first all-SiC traction inverter von Hamada, Kenji, Hino, Shiro, Miura, Naruhisa, Watanabe, Hiroshi, Nakata, Shuhei, Suekawa, Eisuke, Ebiike, Yuji, Imaizumi, Masayuki, Umezaki, Isao, Yamakawa, Satoshi

Volltext

Characterization of SiO2/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET von Nagae, Akemi, Tanaka, Rina, Nakata, Shuhei, Kagawa, Yasuhiro, Ohtsuka, Kenichi, Hino, Shiro, Miura, Naruhisa

Volltext

3.3 kV/1500 A power modules for the world s first all-SiC traction inverter von Hamada, Kenji, Hino, Shiro, Miura, Naruhisa, Watanabe, Hiroshi, Nakata, Shuhei, Suekawa, Eisuke, Ebiike, Yuji, Imaizumi, Masayuki, Umezaki, Isao, Yamakawa, Satoshi

Volltext