Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process von Ji, Shiyang, Kojima, Kazutoshi, Kosugi, Ryoji, Saito, Shingo, Sakuma, Yuuki, Tanaka, Yasunori, Yoshida, Sadafumi, Himi, Hiroaki, Okumura, Hajime

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Influence of growth pressure on filling 4H-SiC trenches by CVD method von Ji, Shiyang, Kojima, Kazutoshi, Kosugi, Ryoji, Saito, Shingo, Sakuma, Yuuki, Tanaka, Yasunori, Yoshida, Sadafumi, Himi, Hiroaki, Okumura, Hajime

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Electrical Properties of MOS Structures on 4H-SiC (11-20) Face von Aryoshi, Keiko, Harada, Shinsuke, Himi, Hiroaki, Kajima, Kozutoshi, Tanaka, Yasunori, Okumura, Hajime, Kojima, Takahito, Shimozato, Atsushi, Senzaki, Junji

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Partial SOI Structure by Wafer Direct Bonding through Amorphous Layer von Himi, Hiroaki, Fujino, Seiji

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Silicon wafer direct bonding without hydrophilic native oxides von HIMI, H, MATSUI, M, FUJINO, S, HATTORI, T

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Automotive Semiconductor Devices Using Bonded SOI Wafers von Fujino, Seiji, Himi, Hiroaki

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Intelligent power IC with partial SOI structure von YAMAGYCHI, H, HIMI, H, FUJINO, S, HATTORI, T

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Partial SOI Structure by Wafer Direct Bonding through Amorphous Layer von Himi, Hiroaki, Fujino, Seiji

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Automotive Semiconductor Devices Using Bonded SOI Wafers von Fujino, Seiji, Himi, Hiroaki

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Method for manufacturing semiconductor substrate von Himi, Hiroaki, Iwamori, Noriyuki

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Method for manufacturing semiconductor substrate von IWAMORI NORIYUKI, HIMI HIROAKI

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Physical quantity sensor and method for manufacturing the same von FUJII TETSUO, HIMI HIROAKI

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Method for manufacturing semiconductor substrate von IWAMORI NORIYUKI, HIMI HIROAKI

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Method for manufacturing semiconductor substrate von IWAMORI NORIYUKI, HIMI HIROAKI

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Method for manufacturing semiconductor substrate von Himi, Hiroaki, Iwamori, Noriyuki

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Sensor für eine physikalische Grösse und Verfahren zur Fertigung des Sensors von HIMI, HIROAKI, FUJII, TETSUO

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DISPOSITIF A SEMICONDUCTEUR A HAUTE TENSION von KUZUHARA TAKESHI, YAMADA AKIRA, HIMI HIROAKI

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Method for manufacturing a SOI substrate von HIMI, HIROAKI, IWAMORI, NORIYUKI

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Semiconductor device with trench structure von NAKANO TAKASHI, MIZUNO SHOJI, HIMI HIROAKI

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Semiconductor device with trench structure von Himi, Hiroaki, Nakano, Takashi, Mizuno, Shoji

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