Improvement of electrical characteristics in regrown AlGaN/GaN MOSFETs by suppression of the residual interface charge von Tajima, Jumpei, Hikosaka, Toshiki, Kuraguchi, Masahiko, Nunoue, Shinya

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Impact of dislocations and defects on the relaxation behavior of InGaN/GaN multiple quantum wells grown on Si and sapphire substrates von Yoshida, Hisashi, Hikosaka, Toshiki, Nago, Hajime, Nunoue, Shinya

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Growth and properties of semi-polar GaN on a patterned silicon substrate von Sawaki, Nobuhiko, Hikosaka, Toshiki, Koide, Norikatsu, Tanaka, Shigeyasu, Honda, Yoshio, Yamaguchi, Masahito

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Nature of yellow luminescence band in GaN grown on Si substrate von Ito, Shogo, Nakagita, Taihei, Sawaki, Nobuhiko, Ahn, Hyung Soo, Irie, Masashi, Hikosaka, Toshiki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

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Fabrication of Low On‐Resistance and Normally Off AlGaN/GaN Metal Oxide Semiconductor Heterojunction Field‐Effect Transistors with AlGaN Back Barrier by the Selective Area Regrowth... von Tajima, Jumpei, Hikosaka, Toshiki, Nunoue, Shinya

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Mg segregation in a (1 1¯ 0 1) GaN grown on a 7° off-axis (0 0 1) Si substrate by MOVPE von Tomita, Kazuyoshi, Hikosaka, Toshiki, Kachi, Tetsu, Sawaki, Nobuhiko

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Impact of Carbon Doping on Vertical Leakage Current in AlGaN‐Based Buffer Layer Grown on Silicon Substrate von Kaneko, Ryoma, Yoshida, Hisashi, Yoshioka, Akira, Hikosaka, Toshiki, Nunoue, Shinya

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Mg doping in (1 1¯ 0 1)GaN grown on a 7° off-axis (0 0 1)Si substrate by selective MOVPE von Hikosaka, Toshiki, Koide, Norikatsu, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

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Incorporation of carbon on a ( 1 1 ¯ 0 1 ) facet of GaN by MOVPE von Koide, Norikatsu, Hikosaka, Toshiki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

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Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface von Uesugi, Kenjiro, Shindome, Aya, Kajiwara, Yosuke, Yonehara, Toshiya, Kato, Daimotsu, Hikosaka, Toshiki, Kuraguchi, Masahiko, Nunoue, Shinya

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Suppression of short-channel effects in normally-off GaN MOSFETs with deep recessed-gate structures von Kato, Daimotsu, Kajiwara, Yosuke, Mukai, Akira, Ono, Hiroshi, Shindome, Aya, Tajima, Jumpei, Hikosaka, Toshiki, Kuraguchi, Masahiko, Nunoue, Shinya

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Carbon Incorporation on (1101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy von Koide, Norikatsu, Hikosaka, Toshiki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

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DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate von Honda, Yoshio, Hikosaka, Toshiki, Yamaguchi, Masahito, Sawaki, Nobuhiko, Pozina, Galia, Karlsson, Fredrik, Darakchieva, Vanya, Paskov, Plamen, Monemar, Bo

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NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE von HIKOSAKA, Toshiki

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NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE von HIKOSAKA, Toshiki

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Waveguide element, light-emitting device, and method for manufacturing waveguide element von Hikosaka, Toshiki

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Development of Transverse Quasi-Phase-Matched GaN Waveguide-Type Wavelength Conversion Device von Komatsu, Tenta, Hikosaka, Toshiki, Nunoue, Shinya, Uemukai, Masahiro, Tomoyuki, Tanikawa, Ryuji, Katayama

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Design of AlN Doubly-Resonant Waveguide Microcavity SHG Device von Umeda, Soshi, Nagata, Takumi, Hikosaka, Toshiki, Nunoue, Sinya, Uemukai, Masahiro, Tanikawa, Tomoyuki, Katayama, Ryuji

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NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE von HIKOSAKA TOSHIKI

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NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE von HIKOSAKA TOSHIKI

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