Using tetrakis-diethylamido-hafnium for HfO2 thin-film growth in low-pressure chemical vapor deposition von OHSHITA, Yoshio, OGURA, Atsushi, HOSHINO, Asako, HIIRO, Shigeki, SUZUKI, Toshie, MACHIDA, Hideaki

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Hf1-xSixO2 deposition by metal organic chemical vapor deposition using the Hf(NEt2)4/SiH(NEt2)3/O2 gas system von OHSHITA, Yoshio, OGURA, Atsushi, ISHIKAWA, Masato, HOSHINO, Asako, HIIRO, Shigeki, SUZUKI, Toshie, MACHIDA, Hideaki

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HfO2 growth by low-pressure chemical vapor deposition using the Hf(N(C2H5)2)4/O2 gas system von OHSHITA, Yoshio, OGURA, Atsushi, HOSHINO, Asako, HIIRO, Shigeki, MACHIDA, Hideaki

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Effects of deposition conditions on step-coverage quality in low-pressure chemical vapor deposition of HfO2 von OHSHITA, Yoshio, OGURA, Atsushi, HOSHINO, Akiko, SUZUKI, Toshie, HIIRO, Shigeki, MACHIDA, Hideaki

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Low-pressure chemical vapor deposition of TaCN films by pyrolysis of ethylamido-tantalum von Ohshita, Yoshio, Ogura, Atsushi, Hoshino, Asako, Hiiro, Shigeki, Machida, Hideaki

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HfO 2 growth by low-pressure chemical vapor deposition using the Hf(N(C 2H 5) 2) 4/O 2 gas system von Ohshita, Yoshio, Ogura, Atsushi, Hoshino, Asako, Hiiro, Shigeki, Machida, Hideaki

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Using tetrakis-diethylamido-hafnium for HfO sub(2) thin-film growth in low-pressure chemical vapor deposition von Ohshita, Yoshio, Ogura, Atsushi, Hoshino, Asako, Hiiro, Shigeki, Suzuki, Toshie, Machida, Hideaki

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Using tetrakis-diethylamido-hafnium for HfO 2 thin-film growth in low-pressure chemical vapor deposition von Ohshita, Yoshio, Ogura, Atsushi, Hoshino, Asako, Hiiro, Shigeki, Suzuki, Toshie, Machida, Hideaki

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Hf 1− xSi xO 2 deposition by metal organic chemical vapor deposition using the Hf(NEt 2) 4/SiH(NEt 2) 3/O 2 gas system von Ohshita, Yoshio, Ogura, Atsushi, Ishikawa, Masato, Hoshino, Asako, Hiiro, Shigeki, Suzuki, Toshie, Machida, Hideaki

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Effects of deposition conditions on step-coverage quality in low-pressure chemical vapor deposition of HfO 2 von Ohshita, Yoshio, Ogura, Atsushi, Hoshino, Akiko, Suzuki, Toshie, Hiiro, Shigeki, Machida, Hideaki

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CONDUCTIVE BARRIER FILM FORMING MATERIAL, METHOD FOR FORMING CONDUCTIVE BARRIER FILM, AND METHOD FOR FORMING WIRING FILM von HIIRO SHIGEKI, HOSHINO ASAKO, MACHIDA HIDEAKI, SUZUKI TOSHIE

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MATERIAL FOR DEPOSITING ELECTROCONDUCTIVE BARRIER FILM, METHOD FOR DEPOSITING ELECTROCONDUCTIVE BARRIER FILM AND METHOD FOR DEPOSITING WIRING FILM von HIIRO SHIGEKI, HOSHINO ASAKO, MACHIDA HIDEAKI, SUZUKI TOSHIE

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MATERIAL AND METHOD FOR DEPOSITING CONDUCTIVE BARRIER FILM, WIRED FILM DEPOSITING METHOD, AND ULSI von HIIRO SHIGEKI, HOSHINO ASAKO, MACHIDA HIDEAKI, SUZUKI TOSHIE

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CONDUCTIVE BARRIER FILM FORMING MATERIAL, CONDUCTIVE BARRIER FILM FORMING METHOD, WIRING FILM FORMING METHOD, AS WELL AS ULSI von HIIRO SHIGEKI, HOSHINO ASAKO, MACHIDA HIDEAKI, SUZUKI TOSHIE

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