Ideal hydrogen termination of the Si (111) surface von HIGASHI, G. S, CHABAL, Y. J, TRUCKS, G. W, RAGHAVACHARI, K

Volltext

RAMAN ANALYSIS OF LIGHT-EMITTING POROUS SILICON von SUI, ZF, LEONG, PP, HERMAN, IP, HIGASHI, GS, TEMKIN, H

Volltext

Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF von HIGASHI, G. S, BECKER, R. S, CHABAL, Y. J, BECKER, A. J

Volltext

Mechanism of HF etching of silicon surfaces : a theoretical understanding of hydrogen passivation von TRUCKS, G. W, RAGHAVACHARI, K, HIGASHI, G. S, CHABAL, Y. J

Volltext

Coupling of an adsorbate vibration to a substrate surface phonon : H on Si(111) von DUMAS, P, CHABAL, Y. J, HIGASHI, G. S

Volltext

Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics von HIGASHI, G. S, FLEMING, C. G

Volltext

Infrared spectroscopy of Si(111) surfaces after HF treatment: hydrogen termination and surface morphology von BURROWS, V. A, CHABAL, Y. J, HIGASHI, G. S, RAGHAVACHARI, K, CHRISTAMN, S. B

Volltext

Lifetime of an adsorbate-substrate vibration: H on Si(111) von GUYOT-SIONNEST, P, DUMAS, P, CHABAL, Y. J, HIGASHI, G. S

Volltext

The origination and optimization of Si/SiO2 interface roughness and its effect on CMOS performance von Yuanning Chen, Myricks, R., Decker, M., Liu, J., Higashi, G.S.

Volltext

Chemomechanical polishing of silicon: Surface termination and mechanism of removal von Pietsch, G. J., Higashi, G. S., Chabal, Y. J.

Volltext

Infrared-absorption spectroscopy of Si(100) and Si(111) surfaces after chemomechanical polishing von Pietsch, G. J., Chabal, Y. J., Higashi, G. S.

Volltext

Subthermal photoproduct surface desorption distributions arising from excimer laser excitation of adsorbed trimethylaluminum von HIGASHI, G. S

Volltext

New reconstructions on silicon (111) surfaces von BECKER, R. S, GOLOVCHENKO, J. A, HIGASHI, G. S, SWARTZENTRUBER, B. S

Volltext

The chemistry of alkyl-aluminum compounds during laser-assisted chemical vapor deposition von Higashi, G.S.

Volltext

Roughness of the silicon (001)/SiO2 interface von MAU-TSU TANG, EVANS-LUTTERODT, K. W, HIGASHI, G. S, BOONE, T

Volltext

Vibrational dynamics of the ideally H-terminated Si(111) surface von Chabal, Y.J., Dumas, P., Guyot-Sionnest, P., Higashi, G.S.

Volltext

Growth temperature dependence of the Si(001)/SiO2 interface width von Tang, Mau-Tsu, Evans-Lutterodt, K. W., Green, M. L., Brasen, D., Krisch, K., Manchanda, L., Higashi, G. S., Boone, T.

Volltext

IMPROVEMENT IN HETEROEPITAXIAL FILM QUALITY BY A NOVEL SUBSTRATE PATTERNING GEOMETRY von HULL, R, BEAN, JC, HIGASHI, GS, GREEN, ML, PETICOLAS, L, BAHNCK, D, BRASEN, D

Volltext

Thermal disordering of langmuir-blodgett films of cadmium stearate on sapphire von Rothberg, L., Higashi, G.S., Allara, D.L., Garoff, S.

Volltext

Patterned aluminum growth via excimer laser activated metalorganic chemical vapor deposition von HIGASHI, G. S, FLEMING, C. G

Volltext