Iron and its complexes in silicon von ISTRATOV, A. A, HIESLMAIR, H, WEBER, E. R

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Iron contamination in silicon technology von ISTRATOV, A. A, HIESLMAIR, H, WEBER, E. R

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Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon von Istratov, Andrei A., Flink, Christoph, Hieslmair, Henry, Weber, Eicke R., Heiser, Thomas

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X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon von Vyvenko, O. F., Buonassisi, T., Istratov, A. A., Hieslmair, H., Thompson, A. C., Schindler, R., Weber, E. R.

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Electrical and Recombination Properties of Copper‐Silicide Precipitates in Silicon von Istratov, A. A., Hedemann, H., Seibt, M., Vyvenko, O. F., Schröter, W., Heiser, T., Flink, C., Hieslmair, H., Weber, E. R.

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Gettering of metallic impurities in photovoltaic silicon von MCHUGO, S. A, HIESLMAIR, H, WEBER, E. R

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Diffusion, solubility and gettering of copper in silicon von Istratov, A.A, Flink, C, Hieslmair, H, McHugo, S.A, Weber, E.R

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Interstitial copper-related center in n-type silicon von Istratov, A. A., Hieslmair, H., Flink, C., Heiser, T., Weber, E. R.

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Gettering of iron by oxygen precipitates von Hieslmair, H., Istratov, A. A., McHugo, S. A., Flink, C., Heiser, T., Weber, E. R.

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Gettering simulator: physical basis and algorithm von Hieslmair, H, Balasubramanian, S, Istratov, A A, Weber, E R

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Transient ion drift detection of low level copper contamination in silicon von Heiser, T., McHugo, S., Hieslmair, H., Weber, E. R.

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Temperature dependence of the iron donor level in silicon at device processing temperatures von Kohno, H., Hieslmair, H., Istratov, A. A., Weber, E. R.

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Advanced Gettering Techniques in ULSI Technology von Istratov, A. A., Hieslmair, H., Weber, E. R.

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The dissociation energy and the charge state of a copper-pair center in silicon von Istratov, A. A., Hieslmair, H., Heiser, T., Flink, C., Weber, E. R.

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Defect recognition and impurity detection techniques in crystalline silicon for solar cells von Istratov, A.A, Hieslmair, H, Vyvenko, O.F, Weber, E.R, Schindler, R

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High Throughput Ion-Implantation for Silicon Solar Cells von Hieslmair, H., Mandrell, L., Latchford, I., Chun, M., Sullivan, J., Adibi, B.

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Influence of interstitial copper on diffusion length and lifetime of minority carriers in p-type silicon von Istratov, A. A., Flink, C., Hieslmair, H., Heiser, T., Weber, E. R.

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Experiments and computer simulations of iron profiles in p/p+ silicon: segregation and the position of the iron donor level von Hieslmair, H., Istratov, A.A., Flink, C., McHugo, S.A., Weber, E.R.

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Evaluation of precipitate densities and capture radii from the analysis of precipitation kinetics von Hieslmair, H., Istratov, A. A., Heiser, T., Weber, E. R.

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Analysis of iron precipitation in silicon as a basis for gettering simulations von HIESLMAIR, H, ISTRATOV, A. A, MCHUGO, S. A, FLINK, C, WEBER, E. R

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