Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates von Hsu, J. W. P., Manfra, M. J., Molnar, R. J., Heying, B., Speck, J. S.

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Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy von Heying, B., Averbeck, R., Chen, L. F., Haus, E., Riechert, H., Speck, J. S.

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The magnetocaloric properties of GdScSi and GdScGe von Couillaud, S., Gaudin, E., Franco, V., Conde, A., Pöttgen, R., Heying, B., Rodewald, U.Ch, Chevalier, B.

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Dislocation mediated surface morphology of GaN von Heying, B., Tarsa, E. J., Elsass, C. R., Fini, P., DenBaars, S. P., Speck, J. S.

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Complex magnetic order from multiple Ce-sites in Ce3Pd4Sn6 von Scheidt, E-W, Fischer, A, Wybranski, O, Eickerling, G, Scherer, W, Baenitz, M, Mayr, F, Heying, B, Pöttgen, R

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Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy von Smorchkova, I. P., Elsass, C. R., Ibbetson, J. P., Vetury, R., Heying, B., Fini, P., Haus, E., DenBaars, S. P., Speck, J. S., Mishra, U. K.

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Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers von Shih-En Shih, Deal, W.R., Yamauchi, D.M., Sutton, W.E., Wen-Ben Luo, Yaochung Chen, Smorchkova, I.P., Heying, B., Wojtowicz, M., Siddiqui, M.

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Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films von Heying, B., Wu, X. H., Keller, S., Li, Y., Kapolnek, D., Keller, B. P., DenBaars, S. P., Speck, J. S.

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Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy von Tarsa, E. J., Heying, B., Wu, X. H., Fini, P., DenBaars, S. P., Speck, J. S.

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Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy von Heying, B., Smorchkova, I., Poblenz, C., Elsass, C., Fini, P., Den Baars, S., Mishra, U., Speck, J. S.

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Inducing Magnetism in the Kondo Semiconductor CeRhSb through Hydrogenation:  Antiferromagnetic Behavior of the New Hydride CeRhSbH0.2 von Chevalier, B, Decourt, R, Heying, B, Schappacher, F. M, Rodewald, U. Ch, Hoffmann, R.-D, Pöttgen, R, Eger, R, Simon, A

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Dislocation generation in GaN heteroepitaxy von Wu, X.H, Fini, P, Tarsa, E.J, Heying, B, Keller, S, Mishra, U.K, DenBaars, S.P, Speck, J.S

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Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire von Kapolnek, D., Wu, X. H., Heying, B., Keller, S., Keller, B. P., Mishra, U. K., DenBaars, S. P., Speck, J. S.

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Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy von Smorchkova, I. P., Haus, E., Heying, B., Kozodoy, P., Fini, P., Ibbetson, J. P., Keller, S., DenBaars, S. P., Speck, J. S., Mishra, U. K.

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Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition von Keller, S., Keller, B. P., Wu, Y.-F., Heying, B., Kapolnek, D., Speck, J. S., Mishra, U. K., DenBaars, S. P.

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A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power von Kobayashi, K.W., Yao-Chung Chen, Smorchkova, I., Heying, B., Luo, W.-B., Sutton, W., Wojtowicz, M., Oki, A.

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Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN von Wu, X. H., Kapolnek, D., Tarsa, E. J., Heying, B., Keller, S., Keller, B. P., Mishra, U. K., DenBaars, S. P., Speck, J. S.

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Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers von Smorchkova, I. P., Keller, S., Heikman, S., Elsass, C. R., Heying, B., Fini, P., Speck, J. S., Mishra, U. K.

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Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy von Hierro, A., Arehart, A. R., Heying, B., Hansen, M., Mishra, U. K., DenBaars, S. P., Speck, J. S., Ringel, S. A.

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Hydrogenation of the Ce(Rh1- x Ir x )Ga System:  Occurrence of Antiferromagnetic Ordering in the Hydrides Ce(Rh1- x Ir x )GaH1.8 von Chevalier, B, Heying, B, Rodewald, U. Ch, Sebastian, C. Peter, Bauer, E, Pöttgen, R

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