Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth von Kotzea, Simon, Debald, Arne, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon von Yacoub, Hady, Zweipfennig, Thorsten, Lukens, Gerrit, Behmenburg, Hannes, Fahle, Dirk, Eickelkamp, Martin, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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Button shear testing for adhesion measurements of 2D materials von Schätz, Josef, Nayi, Navin, Weber, Jonas, Metzke, Christoph, Lukas, Sebastian, Walter, Jürgen, Schaffus, Tim, Streb, Fabian, Reato, Eros, Piacentini, Agata, Grundmann, Annika, Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Pindl, Stephan, Lemme, Max C.

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Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition von Wördenweber, Henrik, Karthäuser, Silvia, Grundmann, Annika, Wang, Zhaodong, Aussen, Stephan, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, Waser, Rainer, Hoffmann-Eifert, Susanne

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Flexible Large‐Area Light‐Emitting Devices Based on WS2 Monolayers von Andrzejewski, Dominik, Oliver, Ruth, Beckmann, Yannick, Grundmann, Annika, Heuken, Michael, Kalisch, Holger, Vescan, Andrei, Kümmell, Tilmar, Bacher, Gerd

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Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate von Heuken, Lars, Alshahed, Muhammad, Ottaviani, Alessandro, Alomari, Mohammed, Fahle, Dirk, Heuken, Michael, Burghartz, Joachim N.

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Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC von Ghiami, Amir, Sun, Tianyishan, Fiadziushkin, Hleb, Tang, Songyao, Grundmann, Annika, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructures von Maßmeyer, Oliver, Belz, Jürgen, Dogahe, Badrosadat Ojaghi, Widemann, Maximilian, Günkel, Robin, Glowatzki, Johannes, Bergmann, Max, Pasko, Sergej, Krotkus, Simonas, Heuken, Michael, Beyer, Andreas, Volz, Kerstin

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Optical Properties and Growth Characteristics of 8-Quinolinolato Lithium (Liq) Nano-Layers Deposited by Gas Transport Deposition von Zachariadis, Alexandros, Chatzidis, Michalis, Tselekidou, Despoina, Wurzinger, Olaf, Keiper, Dietmar, Baumann, Peter K, Heuken, Michael, Papadopoulos, Kyparisis, Laskarakis, Argiris, Logothetidis, Stergios, Gioti, Maria

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InGaN GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study von Hospodková, Alice, Nikl, Martin, Pacherová, Oliva, Oswald, Ji í, Br a, Petr, Pánek, Dalibor, Foltynski, Bartosz, Hulicius, Eduard, Beitlerová, Alena, Heuken, Michael

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Understanding the impact of heavy ions and tailoring the optical properties of large-area monolayer WS2 using focused ion beam von Sarcan, Fahrettin, Fairbairn, Nicola J., Zotev, Panaiot, Severs-Millard, Toby, Gillard, Daniel J., Wang, Xiaochen, Conran, Ben, Heuken, Michael, Erol, Ayse, Tartakovskii, Alexander I., Krauss, Thomas F., Hedley, Gordon J., Wang, Yue

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Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model von Pradhan, Mamta, Alomari, Mohammed, Moser, Matthias, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Burghartz, Joachim N.

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CVD graphene-MoS2 Van der Waals heterostructures on the millimeter-scale von Rademacher, Nico, Reato, Eros, Völkel, Lukas, Grundmann, Annika, Heuken, Michael, Kalisch, Holger, Vescan, Andrei, Daus, Alwin, Lemme, Max C.

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PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management von Moser, Matthias, Pradhan, Mamta, Alomari, Mohammed, Heuken, Michael, Schmitt, Thomas, Kallfass, Ingmar, Burghartz, Joachim N.

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Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2 von Ghiami, Amir, Grundmann, Annika, Tang, Songyao, Fiadziushkin, Hleb, Wang, Zhaodong, Aussen, Stephan, Hoffmann-Eifert, Susanne, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT von Lecourt, Francois, Agboton, Alain, Ketteniss, Nico, Behmenburg, Hannes, Defrance, Nicolas, Hoel, Virginie, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, De Jaeger, Jean-Claude

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Investigation of Lateral and Vertical Heterostructures of MoS2/WS2 von Belz, Jürgen, Maßmeyer, Oliver, Dogahe, Samane Ojaghi, Beyer, Andreas, Myja, Henrik, Kümmell, Tillmar, Gerd, Bacher, Heuken, Michael, Grundmann, Annika, Kalisch, Holger, Vescan, Andrei, Volz, Kerstin

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The controlled growth of GaN microrods on Si(111) substrates by MOCVD von Foltynski, Bartosz, Garro, Nuria, Vallo, Martin, Finken, Matthias, Giesen, Christoph, Kalisch, Holger, Vescan, Andrei, Cantarero, Andrés, Heuken, Michael

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Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes von Finken, Matthias, Wille, Ada, Reuters, Benjamin, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers von Hahn, Herwig, Pécz, Béla, Kovács, András, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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