Invited article: An integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument von Kühne, P, Herzinger, C M, Schubert, M, Woollam, J A, Hofmann, T

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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures von Hofmann, T., Kühne, P., Schöche, S., Chen, Jr-Tai, Forsberg, U., Janzén, E., Ben Sedrine, N., Herzinger, C. M., Woollam, J. A., Schubert, M., Darakchieva, V.

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Variable-wavelength frequency-domain terahertz ellipsometry von Hofmann, T., Herzinger, C. M., Boosalis, A., Tiwald, T. E., Woollam, J. A., Schubert, M.

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Terahertz ellipsometry and terahertz optical-Hall effect von Hofmann, T., Herzinger, C.M., Tedesco, J.L., Gaskill, D.K., Woollam, J.A., Schubert, M.

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Infrared dielectric anisotropy and phonon modes of sapphire von Schubert, M., Tiwald, T. E., Herzinger, C. M.

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Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect von Kühne, P, Darakchieva, V, Yakimova, R, Tedesco, J D, Myers-Ward, R L, Eddy, Jr, C R, Gaskill, D K, Herzinger, C M, Woollam, J A, Schubert, M, Hofmann, T

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Terahertz optical-Hall effect for multiple valley band materials: n-type silicon von Kühne, P., Hofmann, T., Herzinger, C.M., Schubert, M.

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Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation von Herzinger, C. M., Johs, B., McGahan, W. A., Woollam, J. A., Paulson, W.

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The optical Hall effect von Hofmann, T., Herzinger, C. M., Krahmer, C., Streubel, K., Schubert, M.

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Terahertz-frequency dielectric anisotropy in three-dimensional polymethacrylates fabricated by stereolithography von Park, S, Li, Y, Fullager, D B, Schöche, S, Herzinger, C M, Lee, S, Hofmann, T

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Quantifying the accuracy of ellipsometer systems von Johs, Blaine, Herzinger, C. M.

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Anisotropic contrast optical microscope von Peev, D., Hofmann, T., Kananizadeh, N., Beeram, S., Rodriguez, E., Wimer, S., Rodenhausen, K. B., Herzinger, C. M., Kasputis, T., Pfaunmiller, E., Nguyen, A., Korlacki, R., Pannier, A., Li, Y., Schubert, E., Hage, D., Schubert, M.

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Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies von Knight, S, Schöche, S, Darakchieva, V, Kühne, P, Carlin, J-F, Grandjean, N, Herzinger, C M, Schubert, M, Hofmann, T

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Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry von Hofmann, T., Boosalis, A., Kühne, P., Herzinger, C. M., Woollam, J. A., Gaskill, D. K., Tedesco, J. L., Schubert, M.

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Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures von Schöche, S., Shi, Junxia, Boosalis, A., Kühne, P., Herzinger, C. M., Woollam, J. A., Schaff, W. J., Eastman, L. F., Schubert, M., Hofmann, T.

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Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry von Hofmann, T., Herzinger, C. M., Tiwald, T. E., Woollam, J. A., Schubert, M.

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Characterization of biaxially-stretched plastic films by generalized ellipsometry von Elman, J.F., Greener, J., Herzinger, C.M., Johs, B.

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Terahertz magneto-optic generalized ellipsometry using synchrotron and blackbody radiation von Hofmann, T., Schade, U., Herzinger, C. M., Esquinazi, P., Schubert, M.

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Development of a parametric optical constant model for Hg1−xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth von Johs, B, Herzinger, C.M, Dinan, J.H, Cornfeld, A, Benson, J.D

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Determination of AlAs optical constants by variable angle spectroscopic ellipsometry and a multisample analysis von Herzinger, C. M., Yao, H., Snyder, P. G., Celii, F. G., Kao, Y.-C., Johs, B., Woollam, J. A.

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