Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio von Vu, Quoc An, Shin, Yong Seon, Kim, Young Rae, Nguyen, Van Luan, Kang, Won Tae, Kim, Hyun, Luong, Dinh Hoa, Lee, Il Min, Lee, Kiyoung, Ko, Dong-Su, Heo, Jinseong, Park, Seongjun, Lee, Young Hee, Yu, Woo Jong

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Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures von Shin, Yong Seon, Lee, Kiyoung, Kim, Young Rae, Lee, Hyangsook, Lee, I. Min, Kang, Won Tae, Lee, Boo Heung, Kim, Kunnyun, Heo, Jinseong, Park, Seongjun, Lee, Young Hee, Yu, Woo Jong

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The bottom of the memory hierarchy: Semiconductor and DNA data storage von Kim, Seok Joo, Jung, Woo-Bin, Jung, Han Sae, Lee, Min-Hyun, Heo, Jinseong, Horgan, Adrian, Godron, Xavier, Ham, Donhee

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Graphene for True Ohmic Contact at Metal–Semiconductor Junctions von Byun, Kyung-Eun, Chung, Hyun-Jong, Lee, Jaeho, Yang, Heejun, Song, Hyun Jae, Heo, Jinseong, Seo, David H, Park, Seongjun, Hwang, Sung Woo, Yoo, InKyeong, Kim, Kinam

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Graphene and Thin-Film Semiconductor Heterojunction Transistors Integrated on Wafer Scale for Low-Power Electronics von Heo, Jinseong, Byun, Kyung-Eun, Lee, Jaeho, Chung, Hyun-Jong, Jeon, Sanghun, Park, Seongjun, Hwang, Sungwoo

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Direct growth of doping controlled monolayer WSe2 by selenium-phosphorus substitution von Kang, Won Tae, Lee, Il Min, Yun, Seok Joon, Young Il Song, Kim, Kunnyun, Do-Hwan, Kim, Shin, Yong Seon, Lee, Kiyoung, Heo, Jinseong, Young-Min, Kim, Lee, Young Hee, Woo Jong Yu

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Roadmap on ferroelectric hafnia- and zirconia-based materials and devices von Silva, José P. B., Alcala, Ruben, Avci, Uygar E., Barrett, Nick, Bégon-Lours, Laura, Borg, Mattias, Byun, Seungyong, Chang, Sou-Chi, Cheong, Sang-Wook, Choe, Duk-Hyun, Coignus, Jean, Deshpande, Veeresh, Dimoulas, Athanasios, Dubourdieu, Catherine, Fina, Ignasi, Funakubo, Hiroshi, Grenouillet, Laurent, Gruverman, Alexei, Heo, Jinseong, Hoffmann, Michael, Hsain, H. Alex, Huang, Fei-Ting, Hwang, Cheol Seong, Íñiguez, Jorge, Jones, Jacob L., Karpov, Ilya V., Kersch, Alfred, Kwon, Taegyu, Lancaster, Suzanne, Lederer, Maximilian, Lee, Younghwan, Lomenzo, Patrick D., Martin, Lane W., Martin, Simon, Migita, Shinji, Mikolajick, Thomas, Noheda, Beatriz, Park, Min Hyuk, Rabe, Karin M., Salahuddin, Sayeef, Sánchez, Florencio, Seidel, Konrad, Shimizu, Takao, Shiraishi, Takahisa, Slesazeck, Stefan, Toriumi, Akira, Uchida, Hiroshi, Vilquin, Bertrand, Xu, Xianghan, Ye, Kun Hee, Schroeder, Uwe

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Robust bi-stable memory operation in single-layer graphene ferroelectric memory von Song, Emil B., Lian, Bob, Min Kim, Sung, Lee, Sejoon, Chung, Tien-Kan, Wang, Minsheng, Zeng, Caifu, Xu, Guangyu, Wong, Kin, Zhou, Yi, Rasool, Haider I., Seo, David H., Chung, Hyun-Jong, Heo, Jinseong, Seo, Sunae, Wang, Kang L.

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Passivation of Metal Surface States: Microscopic Origin for Uniform Monolayer Graphene by Low Temperature Chemical Vapor Deposition von Jeon, Insu, Yang, Heejun, Lee, Sung-Hoon, Heo, Jinseong, Seo, David H, Shin, Jaikwang, Chung, U-In, Kim, Zheong Gou, Chung, Hyun-Jong, Seo, Sunae

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Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering von Jan, Atif, Fraser, Stephanie A., Moon, Taehwan, Lee, Yun Seong, Bae, Hagyoul, Lee, Hyun Jae, Choe, Duk‐Hyun, Becker, Maximilian T., MacManus‐Driscoll, Judith L., Heo, Jinseong, Di Martino, Giuliana

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Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing von Moon, Taehwan, Lee, Hyun Jae, Nam, Seunggeol, Bae, Hagyoul, Choe, Duk-Hyun, Jo, Sanghyun, Lee, Yun Seong, Park, Yoonsang, Yang, J Joshua, Heo, Jinseong

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Low temperature growth of complete monolayer graphene films on Ni-doped copper and gold catalysts by a self-limiting surface reaction von Woo, Yun Sung, Seo, David H., Yeon, Dong-Hee, Heo, Jinseong, Chung, Hyun-Jong, Benayad, Anass, Chung, Jae-Gwan, Han, Hyouksoo, Lee, Hyo-Sug, Seo, Sunae, Choi, Jae-Young

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In situ measurement of graphene Fermi level by interband spectroscopy von Kyoung, Jisoo, Byun, Kyung-Eun, Byun, Sun Jung, Jeong, Heejeong, Lee, Jaeho, Heo, Jinseong, Song, Hyun Jae, Park, Seongjun, Hwang, Sung Woo

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Validating negative differential capacitance for advanced low-power devices

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Electrical control of kinesin-microtubule motility using a transparent functionalized-graphene substrate von Kim, Eunji, Byun, Kyung-Eun, Choi, Dong Shin, Lee, Dong Jun, Cho, Duck Hyung, Lee, Byung Yang, Yang, Heejun, Heo, Jinseong, Chung, Hyun-Jong, Seo, Sunae, Hong, Seunghun

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Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment von CHANG GOO KANG, SANG KYUNG LEE, BYOUNG HUN LEE, YOUNG GON LEE, HYEON JUN HWANG, CHO, Chunhum, SUNG KWAN LIM, HEO, Jinseong, CHUNG, Hyun-Jong, YANG, Heejun, SEO, Sunae

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Broadband Characterization of Thin Dielectrics Using Heterolayer and Monolayer MIM Capacitors von Shin, Yunsang, Nam, Seung Geol, Heo, Jinseong, Nam, Sangwook

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Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls von Choe, Duk-Hyun, Kim, Sunghyun, Moon, Taehwan, Jo, Sanghyun, Bae, Hagyoul, Nam, Seung-Geol, Lee, Yun Seong, Heo, Jinseong

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Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics von Park, Ju Yong, Choe, Duk-Hyun, Lee, Dong Hyun, Yu, Geun Taek, Yang, Kun, Kim, Se Hyun, Park, Geun Hyeong, Nam, Seung-Geol, Lee, Hyun Jae, Jo, Sanghyun, Kuh, Bong Jin, Ha, Daewon, Kim, Yongsung, Heo, Jinseong, Park, Min Hyuk

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Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier von Yang, Heejun, Heo, Jinseong, Park, Seongjun, Song, Hyun Jae, Seo, David H., Byun, Kyung-Eun, Kim, Philip, Yoo, InKyeong, Chung, Hyun-Jong, Kim, Kinam

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