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  1. 1
    Cryogenic operation of third-generation, 200-GHz Peak-fT, silicon-germanium heterojunction bipolar transistors

    Cryogenic operation of third-generation, 200-GHz Peak-fT, silicon-germanium heterojunction bipolar transistors von BANERJEE, Bhaskar, VENKATARAMAN, Sunitha, FREEMAN, Greg, AHLGREN, David C, YUAN LU, QINGQING LIANG, LEE, Chang-Ho, NUTTINCK, Sebastien, HEO, Dekhyuon, CHEN, Yi-Jan Emery, CRESSLER, John D, LASKAR, Joy


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  2. 2
    Cryogenic operation of third-generation, 200-GHz peak-f/sub T/, silicon-germanium heterojunction bipolar transistors

    Cryogenic operation of third-generation, 200-GHz peak-f/sub T/, silicon-germanium heterojunction bipolar transistors von Banerjee, B., Venkataraman, S., Yuan Lu, Qingqing Liang, Chang-Ho Lee, Nuttinck, S., Dekhyuon Heo, Chen, Y.-J.E., Cressler, J.D., Laskar, J., Freeman, G., Ahlgren, D.C.


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  3. 3
    Cryogenic operation of third-generation, 200-GHz peak-f sub(T), silicon-germanium heterojunction bipolar transistors

    Cryogenic operation of third-generation, 200-GHz peak-f sub(T), silicon-germanium heterojunction bipolar transistors von Banerjee, B, Venkataraman, S, Lu, Yuan, Liang, Qingqing, Lee, Chang-Ho, Nuttinck, S, Heo, Dekhyuon, Chen, Y-JE, Cressler, J D, Laskar, J, Freeman, G, Ahlgren, D C


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