Synergistically enhanced ultraviolet emission of Yb doped ZnO films by using a capping of ultrathin Al and SiO2 microspheres von Zhang, L, Heng, C L, Wang, X, Su, W Y, Finstad, T G

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Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure von Choi, W. K., Chim, W. K., Heng, C. L., Teo, L. W., Ho, Vincent, Ng, V., Antoniadis, D. A., Fitzgerald, E. A.

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On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment von Zhang, L., Heng, C.L., Zhao, C.N., Su, W.Y., Gao, Y.K., Yin, P.G., Finstad, T.G.

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Down-conversion luminescence from (Ce, Yb) co-doped oxygen-rich silicon oxides von Heng, C. L., Wang, T., Su, W. Y., Wu, H. C., Yin, P. G., Finstad, T. G.

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Intense ultraviolet photoluminescent emission from Yb doped ZnO thin films on Si after high temperature annealing von Heng, C.L., Wang, T., Su, W.Y., Wu, H.C., Yang, M.C., Deng, L.G., Yin, P.G., Finstad, T.G.

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The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing von Heng, C. L., Li, J. T., Su, W. Y., Yin, P. G., Finstad, T. G.

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The formation of Ge nanocrystals in a metal–insulator–semiconductor structure and its memory effect von Heng, C.L., Liu, Y.J., Wee, A.T.S., Finstad, T.G.

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Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure von Teo, L. W., Choi, W. K., Chim, W. K., Ho, V., Moey, C. M., Tay, M. S., Heng, C. L., Lei, Y., Antoniadis, D. A., Fitzgerald, E. A.

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Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam evaporated germanium l... von HENG, C. L, TJIU, W. W, FINSTAD, T. G

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Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing von Heng, C. L., Xiang, W., Su, W. Y., Wu, H. C., Gao, Y. K., Yin, P. G., Finstad, T. G.

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Light Emission from Rare-Earth Doped Silicon Nanostructures von Li, J., Zalloum, O. H. Y., Roschuk, T., Heng, C. L., Wojcik, J., Mascher, P.

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Strong enhancement of ultra-violet emission by Ce doping of ZnO sputtered films von Heng, C.L., Wang, T., Li, H., Liu, J.J., Zhu, J.W., Ablimit, A., Su, W.Y., Wu, H.C., Yin, P.G., Finstad, T.G.

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Electrical characteristics of a metal–insulator–semiconductor memory structure containing Ge nanocrystals von Heng, C.L., Finstad, T.G.

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Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure von HENG, C. L, TEO, L. W, HO, Vincent, TAY, M. S, LEI, Y, CHOI, W. K, CHIM, W. K

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Electrical characterization of a trilayer germanium nanocrystal memory device von Ho, Vincent, Tay, M.S., Moey, C.H., Teo, L.W., Choi, W.K., Chim, W.K., Heng, C.L., Lei, Y.

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Effects of ytterbium doping on the ultraviolet emissions of MgZnO films prepared by magnetron sputtering von Heng, C.L., Li, X.L., Wang, X., Su, W.Y., Finstad, T.G.

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Synergistically enhanced ultraviolet emission of Yb doped ZnO films by using a capping of ultrathin Al and SiO 2 microspheres von Zhang, L., Heng, C. L., Wang, X., Su, W. Y., Finstad, T. G.

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Compact efficient high-power continuous-wave Nd:YVO 4 /KGW/LBO Raman lasers for selectable wavelengths within 559-603 nm von Huang, Hsin-Jia, Chang, Xiu-Wei, Hsieh, Cheng-Li, Li, Di, Chen, Yung-Fu

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Effects of Yb doping on the structure and near band-edge emission of ZnO thin films on Si after high temperature annealing von Heng, C.L., Zhao, C.N., Zhang, L., Xiang, W., Su, W.Y., Yin, H.X., Gao, Y.K., Yin, P.G., Finstad, T.G.

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Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films von YOU, L.-P, HENG, C. L, MA, S. Y, MA, Z. C, ZONG, W. H, WU, Z.-L, QIN, G. G

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