The silicon-silicon dioxide system: Its microstructure and imperfections von Helms, C R, Poindexter, E H

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Experimental investigation of a PtSi source and drain field emission transistor von Snyder, John P., Helms, C. R., Nishi, Yoshio

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Influence of interface roughness on silicon oxide thickness measured by ellipsometry von FANG, S. J, CHEN, W, YAMANAKA, T, HELMS, C. R

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Comparison of Si surface roughness measured by atomic force microscopy and ellipsometry von Fang, S. J., Chen, W., Yamanaka, T., Helms, C. R.

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The evolution of (001) Si/SiO2 interface roughness during thermal oxidation von FANG, S. J, CHEN, W, YAMANAKA, T, HELMS, C. R

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Effect of sodium sulfide treatment on band bending in GaAs von BESSER, R. S, HELMS, C. R

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Comparison of surface properties of sodium sulfide and ammonium sulfide passivation of GaAs von BESSER, R. S, HELMS, C. R

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Analyzing atomic force microscopy images using spectral methods von Fang, S. J., Haplepete, S., Chen, W., Helms, C. R., Edwards, Hal

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Thermodynamic model prediction of metal removal during hydrogen annealing of Si wafers von HELMS, C. R

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Photoemission study of the band bending and chemistry of sodium sulfide on GaAs (100) von SPINDT, C. J, BESSER, R. S, CAO, R, MIYANO, K, HELMS, C. R, SPICER, W. E

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Effect of surface iron on photoconductivity carrier recombination lifetime of p-type silicon von PARK, H, HELMS, C. R, DAEHONG KO

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Modeling of junction formation and drive-in in ion implanted HgCdTe von Holander-Gleixner, S., Williams, B. L., Robinson, H. G., Helms, C. R.

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Simulation of HgTe/CdTe interdiffusion using fundamental point defect mechanisms von Holander-Gleixner, S., Robinson, H. G., Helms, C. R.

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Mercury interstitial generation in ion implanted mercury cadmium telluride von Williams, B. L., Robinson, H. G., Helms, C. R.

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Properties of ultrathin thermal nitrides in silicon Schottky barrier structures von SOBOLEWSKI, M. A, HELMS, C. R

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Device modeling of HgCdTe vertically integrated photodiodes von Mao, D. H., Robinson, H. G., Bartholomew, D. U., Helms, C. R.

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Effect of SiO2 surface chemistry on the oxidation of silicon von DELARIOS, J. M, KAO, D. B, HELMS, C. R, DEAL, B. E

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The effect of annealing treatment on the distribution of deuterium in silicon and in silicon/silicon oxide systems von HEUNGSOO PARK, HELMS, C. R

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Direct observation of the etching of damaged surface layers from natural diamond by low-energy oxygen ion bombardment von Beerling, T. E., Helms, C. R.

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Optical absorption of un-implanted and implanted HgCdTe von Mao, D. H., Syllaios, A. J., Robinson, H. G., Helms, C. R.

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