Single-Event Latch-Up: Increased Sensitivity From Planar to FinFET von Karp, James, Hart, Michael J., Maillard, Pierre, Hellings, Geert, Linten, Dimitri

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Surface Charge Modulation and Reduction of Non-Linear Electrolytic Screening in FET-Based Biosensing von Gupta, Mihir, Santermans, Sybren, Hellings, Geert, Lagae, Liesbet, Martens, Koen, Van Roy, Willem

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Electrical TCAD Simulations of a Germanium pMOSFET Technology von Hellings, Geert, Eneman, Geert, Krom, Raymond, De Jaeger, B, Mitard, Jérôme, De Keersgieter, An, Hoffmann, Thomas, Meuris, Marc, De Meyer, Kristin

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Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique von Waldron, Niamh, Wang, Gang, Nguyen, Ngoc D., Orzali, Tommaso, Merckling, Clement, Brammertz, Guy, Ong, Patrick, Winderickx, Gillis, Hellings, Geert, Eneman, Geert, Caymax, Matty, Meuris, Marc, Horiguchi, Naoto, Thean, Aaron

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Characteristics of cross-sectional atom probe analysis on semiconductor structures von Koelling, S., Innocenti, N., Hellings, G., Gilbert, M., Kambham, A.K., De Meyer, K., Vandervorst, W.

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(Invited) Status and Trends in Ge CMOS Technology von Claeys, Cor, Mitard, Jerome, Hellings, Geert, Eneman, Geert, De Jaeger, Brice, Witters, Liebeth, Loo, Roger, Delabie, Annelies, Sioncke, Sonja, Caymax, Matty, Simoen, Eddy

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The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures von Hellings, Geert, Hikavyy, Andriy, Mitard, Jerome, Witters, Liesbeth, Benbakhti, Brahim, Alian, AliReza, Waldron, Niamh, Bender, Hugo, Eneman, Geert, Krom, Raymond, Schulze, Andreas, Vandervorst, Wilfried, Loo, Roger, Heyns, Marc, Meuris, Marc, Hoffmann, Thomas, De Meyer, Kristin

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A 1.8-V GPIO With Design-Technology-Reliability Co-Optimization in Sub-3-nm GAA-NS Technology von Chen, Wen-Chieh, Chen, Shih-Hung, Huang, Man-Ching, Chang, Shu-Wei, Hellings, Geert, Groeseneken, Guido

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Systematic study of shallow junction formation on germanium substrates von Hellings, Geert, Rosseel, Erik, Clarysse, Trudo, Petersen, Dirch Hjorth, Hansen, Ole, Nielsen, Peter Folmer, Simoen, Eddy, Eneman, Geert, De Jaeger, Brice, Hoffmann, Thomas, De Meyer, Kristin, Vandervorst, Wilfried

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Impact of Sub-μm Wafer Thinning on Latch-Up Risk in DTCO/STCO Scaling Era von Serbulova, Kateryna, Chen, Shih-Hung, Hellings, Geert, Veloso, Anabela, Jourdain, Anne, Boeck, Jo De, Groeseneken, Guido

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Unraveling the impact of nano-scaling on silicon field-effect transistors for the detection of single-molecules von Santermans, Sybren, Hellings, Geert, Heyns, Marc, Van Roy, Willem, Martens, Koen

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ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy von Chen, Wen-Chieh, Chen, Shih-Hung, Chiarella, Thomas, Hellings, Geert, Linten, Dimitri, Groeseneken, Guido

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Simulation Study of Performance for a 20-nm Gate Length In Ga As Implant Free Quantum Well MOSFET von Benbakhti, B., Martinez, A., Kalna, K., Hellings, G., Eneman, G., De Meyer, K., Meuris, M.

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Compact Modeling and Design Exploration of Non-Destructive Read-Out 1T1C FeRAM von Xiang, Yang, Mukherjee, Shankha, Hellings, Geert, Oh, Hyungrock, Garcia Bardon, Marie, Van Houdt, Jan

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ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy von Chen, Wen-Chieh, Chen, Shih-Hung, Chiarella, Thomas, Hellings, Geert, Linten, Dimitri, Groeseneken, Guido

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Impact of Sub- \mu m Wafer Thinning on Latch-Up Risk in DTCO/STCO Scaling Era von Serbulova, Kateryna, Chen, Shih-Hung, Hellings, Geert, Veloso, Anabela, Jourdain, Anne, Boeck, Jo De, Groeseneken, Guido

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Evaluation of Nanosheet and Forksheet Width Modulation for Digital IC Design in the Sub-3-nm Era von Sisto, Giuliano, Zografos, Odysseas, Chehab, Bilal, Kakarla, Naveen, Xiang, Yang, Milojevic, Dragomir, Weckx, Pieter, Hellings, Geert, Ryckaert, Julien

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3D SRAM Macro Design in 3D Nanofabric Process Technology von Abdi, Dawit Burusie, Salahuddin, Shairfe M, Boemmels, Juergen, Giacomin, Edouard, Weckx, Pieter, Ryckaert, Julien, Hellings, Geert, Catthoor, Francky

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Design Space Exploration of FeRAM Bit Cell for DRAM Application von Oh, Hyungrock, Xiang, Yang, Redondo, Fernando Garcia, Gupta, Mohit Kumar, Perumkunnil, Manu, Bardon, Marie Garcia, Dhiman, Amit, Gowda, Sathisha Nanjunde, Walke, Amey, Fantini, Andrea, Yasin, Farrukh, Kar, Gouri Sankar, Hellings, Geert, Dehaene, Wim

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Design Space Exploration of FeRAM Bit Cell for DRAM Application von Oh, Hyungrock, Xiang, Yang, Redondo, Fernando Garcia, Gupta, Mohit Kumar, Perumkunnil, Manu, Bardon, Marie Garcia, Dhiman, Amit, Gowda, Sathisha Nanjunde, Walke, Amey, Fantini, Andrea, Yasin, Farrukh, Kar, Gouri Sankar, Hellings, Geert, Dehaene, Wim

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