Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices von Glavin, Nicholas R., Chabak, Kelson D., Heller, Eric R., Moore, Elizabeth A., Prusnick, Timothy A., Maruyama, Benji, Walker, Dennis E., Dorsey, Donald L., Paduano, Qing, Snure, Michael

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Spin Crossover of Thiophosgene via Multidimensional Heavy-Atom Quantum Tunneling von Heller, Eric R, Richardson, Jeremy O

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Vascular effects of a low-carbohydrate high-protein diet von Foo, Shi Yin, Heller, Eric R, Wykrzykowska, Joanna, Sullivan, Christopher J, Manning-Tobin, Jennifer J, Moore, Kathryn J, Gerszten, Robert E, Rosenzweig, Anthony

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Competing quantum effects in heavy-atom tunnelling through conical intersections von Fang, Wei, Heller, Eric R, Richardson, Jeremy O

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A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices von Choi, Sukwon, Graham, Samuel, Chowdhury, Srabanti, Heller, Eric R., Tadjer, Marko J., Moreno, Gilberto, Narumanchi, Sreekant

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Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing von Pavlidis, Georges, Kendig, Dustin, Heller, Eric R., Graham, Samuel

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First-Principles Assessment of the Structure and Stability of 15 Intrinsic Point Defects in Zinc-Blende Indium Arsenide von Peng, Qing, Chen, Nanjun, Huang, Danhong, Heller, Eric R., Cardimona, David A., Gao, Fei

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Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features von Sukwon Choi, Heller, E. R., Dorsey, D., Vetury, R., Graham, S.

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High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge von Moser, Neil A., McCandless, Jonathan P., Crespo, Antonio, Leedy, Kevin D., Green, Andrew J., Heller, Eric R., Chabak, Kelson D., Peixoto, Nathalia, Jessen, Gregg H.

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Exploring the effects of quantum decoherence on the excited-state dynamics of molecular systems von Heller, Eric R., Joswig, Jan-Ole, Seifert, Gotthard

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Lateral β-Ga2O3 field effect transistors von Chabak, Kelson D, Leedy, Kevin D, Green, Andrew J, Mou, Shin, Neal, Adam T, Asel, Thaddeus, Heller, Eric R, Hendricks, Nolan S, Liddy, Kyle, Crespo, Antonio, Miller, Nicholas C, Lindquist, Miles T, Moser, Neil A, Fitch, Robert C, Walker, Dennis E, Dorsey, Donald L, Jessen, Gregg H

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The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs von Sukwon Choi, Heller, E. R., Dorsey, D., Vetury, R., Graham, S.

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Evaluation of transition rates from nonequilibrium instantons von Heller, Eric R., Limmer, David T.

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Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs von Kim, Samuel H., Shoemaker, Daniel, Chatterjee, Bikramjit, Green, Andrew J., Chabak, Kelson D., Heller, Eric R., Liddy, Kyle J., Jessen, Gregg H., Graham, Samuel, Choi, Sukwon

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Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices von Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G., Crespo, A., Langley, D., Denninghoff, D.J., Trejo, M., Heller, E.R.

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500 °C operation of β-Ga2O3 field-effect transistors von Islam, Ahmad E., Sepelak, Nicholas P., Liddy, Kyle J., Kahler, Rachel, Dryden, Daniel M., Williams, Jeremiah, Lee, Hanwool, Gann, Katie, Popp, Andreas, Leedy, Kevin D., Hendricks, Nolan S., Brown, Jeff. L., Heller, Eric R., Wang, Weisong, Zhu, Wenjuan, Thompson, Michael O., Chabak, Kelson D., Green, Andrew J.

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Heavy‐Atom Quantum Tunnelling in Spin Crossovers of Nitrenes von Heller, Eric R., Richardson, Jeremy O.

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Electroluminescence Microscopy of Cross-Sectioned AlGaN/GaN High-Electron Mobility Transistors von Hilton, Albert M., Heller, Eric R., Dorsey, Donald L.

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Two‐Dimensional Phosphorus Carbide Polymorphs: Influence of Structural Motifs on the Band Gap von Heller, Eric R., Joswig, Jan‐Ole, Lorenz, Tommy, Seifert, Gotthard

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Nanometer-Scale Strain Measurements in AlGaN/GaN High-Electron Mobility Transistors During Pulsed Operation von Rosenberger, Matthew R., Jones, Jason P., Heller, Eric R., Graham, Samuel, King, William P.

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