Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs von Howell, R.S., Buchoff, S., Van Campen, S., McNutt, T.R., Hearne, H., Ezis, A., Sherwin, M.E., Clarke, R.C., Singh, R.

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Design and process related MIM cap reliability improvement von Parke, Justin, Lewis, Randy, Ha, Kathy, Cramer, Harlan, Hearne, Harold

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Reproducible operating margins on a 72 800-device digital superconducting chip von Herr, Quentin P, Osborne, Joshua, Stoutimore, Micah J A, Hearne, Harold, Selig, Ryan, Vogel, Jacob, Min, Eileen, Talanov, Vladimir V, Herr, Anna Y

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Reproducible operating margins on a 72800-device digital superconducting chip von Herr, Quentin P, Osborne, Joshua, Stoutimore, Micah J A, Hearne, Harold, Selig, Ryan, Vogel, Jacob, Min, Eileen, Talanov, Vladimir V, Herr, Anna Y

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6.9-cm 2 Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA von Veliadis, Victor, Snook, Megan, Woodruff, Sharon, Nechay, Bettina, Hearne, Harold, Lavoie, Chris, Giorgi, David, Ingram, Michael

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6.9-cm2 Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA von Veliadis, Victor, Snook, Megan, Woodruff, Sharon, Nechay, Bettina, Hearne, Harold, Lavoie, Chris, Giorgi, David, Ingram, Michael

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6.9-cm super(2) Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA von Veliadis, Victor, Snook, Megan, Woodruff, Sharon, Nechay, Bettina, Hearne, Harold, Lavoie, Chris, Giorgi, David, Ingram, Michael

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Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size von Howell, Robert S., Lewis, Randall, Henry, H. George, Hearne, Harold, Brown, Deas, Dawson, Dale, Ezis, Andris

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600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration von Veliadis, Victor, Ha, H.C., Scozzie, Charles, Urciuoli, Damian, Hearne, Harold, Howell, R.

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Investigation of the Suitability of 1200-V Normally-Off Recessed-Implanted-Gate SiC VJFETs for Efficient Power-Switching Applications von Veliadis, V., Hearne, H., Stewart, E.J., Ha, H.C., Snook, M., McNutt, T., Howell, R., Lelis, A., Scozzie, C.

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Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices von Nechay, Bettina, Kirby, Chris, Howell, R.S., Woodruff, Sharon, Veliadis, Victor, Snook, Megan, McNutt, Ty, Davis, Stuart, Hearne, Harold, White, Joseph

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600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination von Veliadis, Victor, Ha, H.C., Scozzie, Charles, Urciuoli, Damian, Hearne, Harold

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11.72 cm2 SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode von Nechay, Bettina, McNutt, Ty, Howell, R.S., Woodruff, Sharon, Veliadis, Victor, Snook, Megan, Davis, Stuart, Hearne, Harold, Giorgi, David, White, Joseph

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VJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications von McNutt, Ty, Veliadis, Victor, Potyraj, Paul, Scozzie, Charles, Snook, Megan, Hearne, Harold

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High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection von Nechay, Bettina, McNutt, Ty, Howell, R.S., Woodruff, Sharon, Veliadis, Victor, Snook, Megan, Davis, Stuart, Hearne, Harold, Giorgi, David, White, Joseph

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Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs von McNutt, Ty, Scozzie, Charles, Stewart, Eric J., Veliadis, Victor, Snook, Megan, Lelis, Aivars J., Chang, W., Hearne, Harold

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Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations von Veliadis, Victor, Scozzie, Charles, Lelis, Aivars J., Stewart, Eric J., Hearne, Harold, Howell, R.

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1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications von De Salvo, Gregory, McNutt, Ty, Clarke, Chris, McCoy, Megan, Potyraj, Paul, Scozzie, Charles, Veliadis, Victor, Hearne, Harold

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Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors von Chang, W., Urciuoli, Damian, Stewart, Eric J., Howell, R.S., Veliadis, Victor, Snook, Megan, Lelis, Aivars J., Caldwell, Joshua D., Hearne, Harold, Scozzie, C.

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Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors von McNutt, Ty, Potyraj, Paul, Scozzie, Charles, Stewart, Eric J., Veliadis, Victor, Snook, Megan, Caldwell, Joshua D., Hearne, Harold

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