In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film von Chichibu, S. F., Kojima, K., Hazu, K., Ishikawa, Y., Furusawa, K., Mita, S., Collazo, R., Sitar, Z., Uedono, A.

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Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic... von Chichibu, S. F., Miyake, H., Ishikawa, Y., Tashiro, M., Ohtomo, T., Furusawa, K., Hazu, K., Hiramatsu, K., Uedono, A.

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High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN subst... von Chichibu, S F, Hazu, K, Furusawa, K, Ishikawa, Y, Onuma, T, Ohtomo, T, Ikeda, H, Fujito, K

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Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates gr... von Chichibu, S. F., Hazu, K., Ishikawa, Y., Tashiro, M., Namita, H., Nagao, S., Fujito, K., Uedono, A.

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Enhanced growth rate for ammonothermal gallium nitride crystal growth using ammonium iodide mineralizer von Tomida, D., Kagamitani, Y., Bao, Q., Hazu, K., Sawayama, H., Chichibu, S.F., Yokoyama, C., Fukuda, T., Ishiguro, T.

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Major impacts of point defects and impurities on the carrier recombination dynamics in AlN von Chichibu, S. F., Onuma, T., Hazu, K., Uedono, A.

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Surface stoichiometry and activity control for atomically smooth low dislocation density ZnO and pseudomorphic MgZnO epitaxy on a Zn-polar ZnO substrate by the helicon-wave-excited... von Sawai, Y., Hazu, K., Chichibu, S. F.

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Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements von Chichibu, S. F., Hazu, K., Ishikawa, Y., Tashiro, M., Ohtomo, T., Furusawa, K., Uedono, A., Mita, S., Xie, J., Collazo, R., Sitar, Z.

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Femtosecond-laser-driven photoelectron-gun for time-resolved cathodoluminescence measurement of GaN von Onuma, T., Kagamitani, Y., Hazu, K., Ishiguro, T., Fukuda, T., Chichibu, S. F.

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Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence von Ishikawa, Y, Tashiro, M, Hazu, K, Furusawa, K, Namita, H, Nagao, S, Fujito, K, Chichibu, S F

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Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun von Furusawa, K., Ishikawa, Y., Tashiro, M., Hazu, K., Nagao, S., Ikeda, H., Fujito, K., Chichibu, S. F.

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Identification of extremely radiative nature of AlN by time-resolved photoluminescence von Onuma, T., Hazu, K., Uedono, A., Sota, T., Chichibu, S. F.

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Ammonothermal epitaxy of wurtzite GaN using an NH4I mineralizer von KAGAMITANI, Y, KURIBAYASHI, T, FUKUDA, T, HAZU, K, ONUMA, T, TOMIDA, D, SIMURA, R, CHICHIBU, S. F, SUGIYAMA, K, YOKOYAMA, C, ISHIGURO, T

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Valence-band-ordering of a strain-free bulk ZnO single crystal identified by four-wave-mixing spectroscopy technique von Hazu, K., Chichibu, S. F., Adachi, S., Sota, T.

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Lateral transport properties of Nb-doped rutile- and anatase-TiO2 films epitaxially grown on c-plane GaN von Hazu, K., Ohtomo, T., Nakayama, T., Tanaka, A., Chichibu, S. F.

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Light polarization characteristics of m-plane AlxGa1−xN films suffering from in-plane anisotropic tensile stresses von Hazu, K., Hoshi, T., Kagaya, M., Onuma, T., Chichibu, S. F.

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Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering von Fouda, A., Hazu, K., Haemori, M., Nakayama, T., Tanaka, A., Chichibu, S. F.

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Improving the purity of GaN grown by the ammonothermal method with in-autoclave gas-phase acidic mineralizer synthesis von Tomida, D., Chichibu, S.F., Kagamitani, Y., Bao, Q., Hazu, K., Simura, R., Sugiyama, K., Yokoyama, C., Ishiguro, T., Fukuda, T.

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Polarized XAFS study of Al K -edge for m -plane AlGaN films von Miyanaga, T, Azuhata, T, Nakajima, K, Nagoya, H, Hazu, K, Chichibu, S F

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Impacts of anisotropic tilt mosaics of state-of-the-art m-plane freestanding GaN substrates on the structural and luminescent properties of m-plane AlxGa1−xN epilayers von Hazu, K., Kagaya, M., Hoshi, T., Onuma, T., Chichibu, S. F.

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