Formation mechanism of sidewall striation in high-aspect-ratio hole etching von Omura, Mitsuhiro, Hashimoto, Junichi, Adachi, Takahiro, Kondo, Yusuke, Ishikawa, Masao, Abe, Junko, Sakai, Itsuko, Hayashi, Hisataka, Sekine, Makoto, Hori, Masaru

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Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective von Ishikawa, Kenji, Ishijima, Tatsuo, Shirafuji, Tatsuru, Armini, Silvia, Despiau-Pujo, Emilie, Gottscho, Richard A., Kanarik, Keren J., Leusink, Gert J., Marchack, Nathan, Murayama, Takahide, Morikawa, Yasuhiro, Oehrlein, Gottlieb S., Park, Sangwuk, Hayashi, Hisataka, Kinoshita, Keizo

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Generation of obliquely incident ions using phase-shifted RF voltages applied on rod electrodes von Ui, Akio, Sato, Yosuke, Sasaki, Toshiyuki, Sakai, Itsuko, Hayashi, Hisataka

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H2/N2 plasma damage on porous dielectric SiOCH film evaluated by in situ film characterization and plasma diagnostics von Yamamoto, Hiroshi, Takeda, Keigo, Ishikawa, Kenji, Ito, Masafumi, Sekine, Makoto, Hori, Masaru, Kaminatsui, Takeshi, Hayashi, Hisataka, Sakai, Itsuko, Ohiwa, Tokuhisa

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Selective etch of poly(methyl methacrylate) in block copolymer based on control of ion energy and design of gas chemistry for directed self assembly lithography von Yamamoto, Hiroshi, Imamura, Tsubasa, Omura, Mitsuhiro, Sakai, Itsuko, Hayashi, Hisataka

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Chemical bond modification in porous SiOCH films by H2 and H2/N2 plasmas investigated by in situ infrared reflection absorption spectroscopy von Yamamoto, Hiroshi, Asano, Kohei, Ishikawa, Kenji, Sekine, Makoto, Hayashi, Hisataka, Sakai, Itsuko, Ohiwa, Tokuhisa, Takeda, Keigo, Kondo, Hiroki, Hori, Masaru

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Cyclic C4F8 and O2 plasma etching of TiO2 for high-aspect-ratio three-dimensional devices von Imamura, Tsubasa, Sakai, Itsuko, Hayashi, Hisataka, Sekine, Makoto, Hori, Masaru

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Cyclic C 4 F 8 and O 2 plasma etching of TiO 2 for high-aspect-ratio three-dimensional devices von Imamura, Tsubasa, Sakai, Itsuko, Hayashi, Hisataka, Sekine, Makoto, Hori, Masaru

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Study of CO2 ashing for porous SiOCH film using 100 MHz/13.56 MHz dual frequency superimposed capacitive coupled plasma von Imamura, Tsubasa, Yamamoto, Katsumi, Kurihara, Kazuaki, Hayashi, Hisataka

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Silver film etching using halogen gas plasma von Sasaki, Toshiyuki, Yoshikawa, Kenichi, Furumoto, Kazuhito, Sakai, Itsuko, Hayashi, Hisataka, Sekine, Makoto, Hori, Masaru

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Fabrication of Silicon-on-Nothing Structure by Substrate Engineering Using the Empty-Space-in-Silicon Formation Technique von Sato, Tsutomu, Mizushima, Ichiro, Taniguchi, Shuichi, Takenaka, Keiichi, Shimonishi, Satoshi, Hayashi, Hisataka, Hatano, Masayuki, Sugihara, Kazuyoshi, Tsunashima, Yoshitaka

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Highly selective removal of poly(methyl methacrylate) from polystyrene- block -poly(methyl methacrylate) by CO/H2 plasma etching von Imamura, Tsubasa, Yamamoto, Hiroshi, Omura, Mitsuhiro, Sakai, Itsuko, Hayashi, Hisataka

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On-site tetrafluoroethylene gas generation from moderate-pressure pure tetrafluoromethane plasma reactor von Ohmi, Hiromasa, Kikura, Jou, Tanaka, Tomoyuki, Tanaka, Rei, Iino, Daiki, Sakai, Itsuko, Kurihara, Kazuaki, Fukumizu, Hiroyuki, Abe, Junko, Fukuhara, Jota, Hayashi, Hisataka, Kakiuchi, Hiroaki, Yasutake, Kiyoshi

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Plasma etching technology for semiconductor device manufacturing and expectation for innovation von Hayashi, Hisataka

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Layer-by-layer etching of LaAlSiOx von Omura, Mitsuhiro, Furumoto, Kazuhito, Matsuda, Kazuhisa, Sasaki, Toshiyuki, Sakai, Itsuko, Hayashi, Hisataka

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Highly selective etching of LaAlSiOx to Si using C4F8/Ar/H2 plasma von Sasaki, Toshiyuki, Matsuda, Kazuhisa, Omura, Mitsuhiro, Sakai, Itsuko, Hayashi, Hisataka

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Ion energy control in reactive ion etching using 1-MHz pulsed-DC square-wave-superimposed 100-MHz RF capacitively coupled plasma von Ui, Akio, Hayashi, Hisataka, Sakai, Itsuko, Kaminatsui, Takeshi, Ohiwa, Tokuhisa, Yamamoto, Katsumi, Kikutani, Keisuke

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Reactive ion etching process of SiO 2 film using on-site synthesized C 2 F 4 from CF 4 von Iino, Daiki, Tanida, Satoshi, Kurihara, Kazuaki, Fukumizu, Hiroyuki, Sakai, Itsuko, Abe, Junko, Fukuhara, Jota, Tanaka, Rei, Tanaka, Tomoyuki, Kikura, Jou, Kakiuchi, Hiroaki, Yasutake, Kiyoshi, Ohmi, Hiromasa, Hayashi, Hisataka

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Layer-by-layer etching of LaAlSiO x von Omura, Mitsuhiro, Furumoto, Kazuhito, Matsuda, Kazuhisa, Sasaki, Toshiyuki, Sakai, Itsuko, Hayashi, Hisataka

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Chemical bond modification in porous SiOCH films by H 2 and H 2 /N 2 plasmas investigated by in situ infrared reflection absorption spectroscopy von Yamamoto, Hiroshi, Asano, Kohei, Ishikawa, Kenji, Sekine, Makoto, Hayashi, Hisataka, Sakai, Itsuko, Ohiwa, Tokuhisa, Takeda, Keigo, Kondo, Hiroki, Hori, Masaru

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