Effect of employing positions of thermal cyclic annealing and strained-layer superlattice on defect reduction in GaAs-on-Si von HAYAFUJI, N, MIYASHITA, M, NISHIMURA, T, KADOIWA, K, KUMABE, H, MUROTANI, T

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Crack propagation and mechanical fracture in GaAs-on-Si von HAYAFUJI, N, KIZUKI, H, MIYASHITA, M, KADOIWA, K, NISHIMURA, T, OGASAWARA, N, KUMABE, H, MUROTANI, T, TADA, A

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Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing von Hayafuji, Norio, Kimura, Tatsuya, Yoshida, Naohito, Kaneno, Nobuaki, Tsugami, Mari, Mizuguchi, Kazuo, Murotani, Toshio, Ibuki, Sumiaki

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GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System von Nishimura, Takashi, Kadoiwa, Kaoru, Hayafuji, Norio, Murotani, Toshio, Ibuki, Sumiaki

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Quasi-persistent photoconductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitaxial wafers von Kizuki, Hirotaka, Kouji, Yoshiharu, Hayafuji, Norio, Kajikawa, Yasutomo

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Multiwafer gas source molecular beam epitaxial system for production technology von Izumi, Shigekazu, Kouji, Yoshiharu, Hayafuji, Norio

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Gas source molecular beam epitaxy as a multi-wafer epitaxial production technology von Izumi, Shigekazu, Kouji, Yoshiharu, Hayafuji, Norio, Sato, Kazuhiko

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Novel InGaAs contact layer growth for hetero-junction bipolar transistors (HBTs) by using the multiple group-V source molecular beam epitaxy (MBE) system von Kadoiwa, Kaoru, Izumi, Shigekazu, Yamamoto, Yoshitsugu, Hayafuji, Norio, Sonoda, Takuji

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Chemical beam epitaxial growth of Si-doped GaAs and InP by using silicon tetraiodide von Izumi, Shigekazu, Hayafuji, Norio, Ito, Kazuhiko, Sato, Kazuhiko, Otsubo, Mutsuyuki

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Overview of recent development of HEMTs in the mm-wave range von Takamiya, Saburo, Yoshida, Naohito, Hayafuji, Norio, Sonoda, Takuji, Mitsui, Shigeru

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Evaluation of molecular beam epitaxially grown AlGaAs/GaAs heterojunctions for bipolar transistor with InGaAs emitter contact layer von Izumi, Shigekazu, Sakai, Masayuki, Shimura, Teruyuki, Hayafuji, Norio, Sato, Kazuhiko, Otsubo, Mutsuyuki

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Selective area chemical beam epitaxial regrowth of Si-doped GaAs by using silicon tetraiodide for field effect transistor application von Izumi, Shigekazu, Yamamoto, Yoshitsugu, Kunii, Tetsuro, Miyakuni, Shinichi, Hayafuji, Norio, Sato, Kazuhiko, Otsubo, Mutsuyuki

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Overview of recent developments of HEMTs in the mm-wave range von Takamiya, Saburo, Yoshida, Naohito, Hayafuji, Norio, Sonoda, Takuji, Mitsui, Shigeru

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Semiconductor device and method for producing the semiconductor device von HAYAFUJI, NORIO

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Less than 10 defects/ cm2 · μm in molecular beam epitaxy grown GaAs by arsenic cracking von Izumi, Shigekazu, Hayafuji, Norio, Sonoda, Takuji, Takamiya, Saburo, Mitsui, Shigeru

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Selective metalorganic chemical vapor deposition growth of GaAs on AlGaAs combined with in situ HCl gas etching von Kizuki, Hirotaka, Hayafuji, Norio, Fujii, Nariaki, Kaneno, Nobuaki, Mihashi, Yutaka, Murotani, Toshio

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Method of making a semiconductor device including carbon as a dopant von HAYAFUJI, NORIO

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Compound semiconductor structure including p-type and n-type regions doped with carbon von HAYAFUJI, NORIO

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SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME von HAYAFUJI, NORIO

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Quantitative correlation between oxygen impurity and current gain β of AlGaAs/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy von Izumi, Shigekazu, Sakai, Masayuki, Shimura, Teruyuki, Tsugami, Mari, Hayafuji, Norio, Sonoda, Takuji, Takamiya, Saburo, Susaki, Wataru, Mitsui, Shigeru

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