Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface von Lin, Chia-Hung, Hatta, Naoki, Konishi, Keita, Watanabe, Shinya, Kuramata, Akito, Yagi, Kuniaki, Higashiwaki, Masataka

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Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects von Nagasawa, Hiroyuki, Abe, Masayuki, Yagi, Kuniaki, Kawahara, Takamitsu, Hatta, Naoki

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Reliable Method for Eliminating Stacking Fault on 3C-SiC(001) von Schöner, Adolf, Reshanov, Sergey A., Nagasawa, Hiroyuki, Yagi, Kuniaki, Hatta, Naoki, Kawahara, Takamitsu

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‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC von Nagasawa, Hiroyuki, Yagi, Kuniaki, Hatta, Naoki, Kawahara, Takamitsu

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High Power LiMnPO4 Cathode Coated with Hybrid Layer of Li Ion-Conductive Phosphate and Electro-Conductive Carbon von Hatta, Naoki, Yoshida, Yusuke, Tomita, Hiroki

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An Online Algorithm Optimally Self-tuning to Congestion for Power Management Problems von Bein, Wolfgang, Hatta, Naoki, Hernandez-Cons, Nelson, Ito, Hiro, Kasahara, Shoji, Kawahara, Jun

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Retraction notice to “Interactions between planar defects in bulk 3C-SiC” [Journal of Crystal Growth, 389 (2014) 108-111] von Ikebe, Yohei, Nagasawa, Hiroyuki, Hatta, Naoki, Kawahara, Takamitsu, Yagi, Kuniaki

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Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC von Yagi, Kuniaki, Uchida, Hidetsugu, Kobayashi, Motoki, Zippelius, Bernd, Abe, Masayuki, Nagasawa, Hiroyuki, Hatta, Naoki, Kawahara, Takamitsu, Pensl, Gerhard

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High Power LiMnPO 4 Cathode Coated with Hybrid Layer of Li Ion-Conductive Phosphate and Electro-Conductive Carbon von Hatta, Naoki, Yoshida, Yusuke, Tomita, Hiroki

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The effects of a rubric based on subjective skill tasks on the subjective benefits of physical education courses for university students von FUJINO, Kazuki, KIUCHI, Atsushi, HATTA, Naoki, MASU, Yujiro, HAYASHI, Naoki

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The effects of a rubric based on subjective skill tasks on subjective benefits of physical education courses in university students von FUJINO, Kazuki, KIUCHI, Atsushi, HATTA, Naoki, MASU, Yujiro, HAYASHI, Naoki

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Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes von Yagi, Kuniaki, Zippelius, Bernd, Uchida, Hidetsugu, Kobayashi, Motoki, Krieger, M., Weber, Heiko B., Nagasawa, Hiroyuki, Hatta, Naoki, Kawahara, Takamitsu, Pensl, Gerhard

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Reduction of Forward Bias Degradation in 4H-SiC PiN Diodes Fabricated on 4H-SiC Bonded Substrates von Kojima, Kazutoshi, Masumoto, Keiko, Hatta, Naoki, Ozono, Kunihide, Harada, Shinsuke, Yagi, Kuniaki, Ishikawa, Seiji, Kobayashi, Motoki, Kurihara, Shunsuke

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Neural basis of fear conditioning induced by video clip: Positron emission tomography study von DORONBEKOV, TALANT K., TOKUNAGA, HIROMASA, IKEJIRI, YOSHITAKA, KAZUI, HIROAKI, HATTA, NAOKI, MASAKI, YOSHIHIRO, OGINO, ATSUSHI, MIYOSHI, NORIKO, OKU, NAOHIKO, NISHIKAWA, TAKASHI, TAKEDA, MASATOSHI

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Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate von Nagasawa, Hiroyuki, Yagi, Kuniaki, Hatta, Naoki, Kawahara, Takamitsu

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RETRACTED: Interactions between planar defects in bulk 3C-SiC von Ikebe, Yohei, Nagasawa, Hiroyuki, Hatta, Naoki, Kawahara, Takamitsu, Yagi, Kuniaki

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RETRACTED: Interactions between planar defects in bulk 3C-SiC von Ikebe, Yohei, Nagasawa, Hiroyuki, Hatta, Naoki, Kawahara, Takamitsu, Yagi, Kuniaki

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Propagation of Stacking Faults in 3C-SiC von Nagasawa, Hiroyuki, Yagi, Kuniaki, Hatta, Naoki, Kawahara, Takamitsu

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Preparation of the Low Cost SiC Wafer by the Layer Splitting Method and the Wafer Direct Bonding Method von KAWAHARA, Takamitsu, HATTA, Naoki, SAKATA, Toyokazu, MINAMI, Akiyuki, YAGI, Kuniaki, UCHIDA, Hidetsugu, KOBAYASI, Motoki, TAKAGI, Hideki

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Reducing Planar Defects in 3C-SiC von Nagasawa, H., Yagi, K., Kawahara, T., Hatta, N.

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