High-efficiency InGaAlP/GaAs visible light-emitting diodes von SUGAWARA, H, ISHIKAWA, M, HATAKOSHI, G

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Low-threshold and high-temperature operation of InGaAlP-based proton-implanted red VCSELs von Takaoka, K., Ishikawa, M., Hatakoshi, G.

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High-brightness InGaAlP green light-emitting diodes von SUGAWARA, H, ITAYA, K, NOZAKI, H, HATAKOSHI, G

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Characteristics of a distributed Bragg reflector for the visible-light spectral region using InGaAlP and GaAs : comparison of transparent- and loss-type structures von SUGAWARA, H, ITAYA, K, HATAKOSHI, G

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Temperature dependence of the threshold current for InGaAlP visible laser diodes von Ishikawa, M., Shiozawa, H., Itaya, K., Hatakoshi, G.-I., Uematsu, Y.

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Analysis of transverse modes of nitride-based laser diodes von Onomura, M., Saito, S., Sasanuma, K., Hatakoshi, G., Nakasuji, R., Rennie, J., Sugiura, L., Nunoue, S., Nishio, J., Itaya, K.

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Hybrid-type InGaAlP/GaAs distributed Bragg reflectors for InGaAlP light-emitting diodes von SUGAWARA, H, ITAYA, K, HATAKOSHI, G.-I

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Short-wavelength InGaAlP visible laser diodes von Hatakoshi, G., Itaya, K., Ishikawa, M., Okajima, M., Uematsu, Y.

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High temperature (74 degrees C) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier von Rennie, J., Okajima, M., Watanabe, M., Hatakoshi, G.

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InGaAlP visible light laser diodes and light-emitting diodes von Itaya, Kazuhiko, Sugawara, Hideto, Hatakoshi, Gen-ichi

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New window-structure InGaAlP visible light laser diodes by self-selective Zn diffusion-induced disordering von Itaya, K., Ishikawa, M., Hatakoshi, G., Uematsu, Y.

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Grating lenses for optical branching von Hatakoshi, G, Nakamura, M

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Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates von Itaya, Kazuhiko, Onomura, Masaaki, Nishio, Johji, Sugiura, Lisa, Saito, Shinji, Suzuki, Mariko, Rennie, John, Nunoue, Shin-ya, Yamamoto, Masahiro, Fujimoto, Hidetoshi, Kokubun, Yoshihiro, Ohba, Yasuo, Gen-ichi Hatakoshi, Gen-ichi Hatakoshi, Masayuki Ishikawa, Masayuki Ishikawa

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Operation voltage reduction in ZnSe-based light-emitting diodes due to the use of n -type AlGaAs and CdZnSe buffer regions von Rennie, J., Nishikawa, Y., Saito, S., Onomura, M., Hatakoshi, G.

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Analysis of beam quality factor for semiconductor lasers von HATAKOSHI, Gen-Ichi

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Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures von Ishihara, Kunihiko, Hatakoshi, Gen-ichi, Ikari, Tomofumi, Minamide, Hiroaki, Ito, Hiromasa, Ohashi, Keishi

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The influence of surface treatment on the quality of Pd/Au contacts to p-type ZnSe von RENNIE, J, ONOMURA, M, NISHIKAWA, Y, SAITO, S, ISHIKAWA, M, HATAKOSHI, G.-I

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Measurement of the barrier height of a multiple quantum barrier (MQB) von Rennie, J., Okajima, M., Itaya, K., Hatakoshi, G.

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Remarkable improvement in the temperature characteristics of GaAs lasers using an InGaAlP cladding layer von Itaya, K., Hatakoshi, G., Ishikawa, M., Nishikawa, Y., Saito, S., Okajima, M.

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Effects of residual impurities on Zn electrical activity in Zn-doped InGaAlP grown by metalorganic chemical vapor deposition von Nishikawa, Yukie, Suzuki, Mariko, Ishikawa, Masayuki, Kokubun, Yoshihiro, Hatakoshi, Gen-ichi

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