Insulated gate and surface passivation structures for GaN-based power transistors von Yatabe, Zenji, Asubar, Joel T, Hashizume, Tamotsu

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Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates von Kaneki, Shota, Ohira, Joji, Toiya, Shota, Yatabe, Zenji, Asubar, Joel T., Hashizume, Tamotsu

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Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation von Asubar, Joel T., Yatabe, Zenji, Gregusova, Dagmar, Hashizume, Tamotsu

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Effects of a GaN cap layer on admittance characteristics of AlGaN/GaN MIS structures von Nishiguchi, Kenya, Nakata, Ken, Nishiguchi, Norihiko, Hashizume, Tamotsu

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State of the art on gate insulation and surface passivation for GaN-based power HEMTs von Hashizume, Tamotsu, Nishiguchi, Kenya, Kaneki, Shota, Kuzmik, Jan, Yatabe, Zenji

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Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface von Mizue, Chihoko, Hori, Yujin, Miczek, Marcin, Hashizume, Tamotsu

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Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates von Ando, Yuji, Kaneki, Shota, Hashizume, Tamotsu

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Effects of postmetallization annealing on interface properties of Al2O3/GaN structures von Hashizume, Tamotsu, Kaneki, Shota, Oyobiki, Tatsuya, Ando, Yuji, Sasaki, Shota, Nishiguchi, Kenya

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Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs von Ohi, Kota, Asubar, Joel Tacla, Nishiguchi, Kenya, Hashizume, Tamotsu

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Interface characterization of Al2O3/m-plane GaN structure von Kaneki, Shota, Hashizume, Tamotsu

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Effects of interface states and temperature on the C - V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors von Miczek, Marcin, Mizue, Chihoko, Hashizume, Tamotsu, Adamowicz, Bogusława

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Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition von Hori, Yujin, Mizue, Chihoko, Hashizume, Tamotsu

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Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors von Asubar, Joel T., Yatabe, Zenji, Hashizume, Tamotsu

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Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor von Ohi, Kota, Hashizume, Tamotsu

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Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching von Yamada, Shinji, Omori, Masato, Sakurai, Hideki, Osada, Yamato, Kamimura, Ryuichiro, Hashizume, Tamotsu, Suda, Jun, Kachi, Tetsu

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Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit von Ishibashi, Takaharu, Okamoto, Masayuki, Hiraki, Eiji, Tanaka, Toshihiko, Hashizume, Tamotsu, Kikuta, Daigo, Kachi, Tetsu

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High Thermoelectric Power Factor of High‐Mobility 2D Electron Gas von Ohta, Hiromichi, Kim, Sung Wng, Kaneki, Shota, Yamamoto, Atsushi, Hashizume, Tamotsu

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Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing von Asubar, Joel T., Kobayashi, Yohei, Yoshitsugu, Koji, Yatabe, Zenji, Tokuda, Hirokuni, Horita, Masahiro, Uraoka, Yukiharu, Hashizume, Tamotsu, Kuzuhara, Masaaki

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Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors von Yatabe, Zenji, Hori, Yujin, Ma, Wan-Cheng, Asubar, Joel T., Akazawa, Masamichi, Sato, Taketomo, Hashizume, Tamotsu

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Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric von Hashizume, Tamotsu, Ootomo, Shinya, Hasegawa, Hideki

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