7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management von Xu, Yibo, Vangipuram, Vijay Gopal Thirupakuzi, Talesara, Vishank, Cheng, Junao, Zhang, Yuxuan, Hashimoto, Tadao, Letts, Edward, Key, Daryl, Zhao, Hongping, Lu, Wu

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Reduction of crack density in ammonothermal bulk GaN growth von Letts, Edward, Key, Daryl, Hashimoto, Tadao

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Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping von Xu, Zhiyu, Daeumer, Matthias A., Cho, Minkyu, Yoo, Jae-Hyuck, Detchprohm, Theeradetch, Bakhtiary-Noodeh, Marzieh, Shao, Qinghui, Laurence, Ted A., Key, Daryl, Letts, Edward, Hashimoto, Tadao, Dupuis, Russell D., Shen, Shyh-Chiang

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X-ray characterization technique for the assessment of surface damage in GaN wafers von Letts, Edward, Sun, Yimeng, Key, Daryl, Jordan, Benjamin, Hashimoto, Tadao

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Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices von Hashimoto, Tadao, Letts, Edward R., Key, Daryl

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Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method von Hashimoto, Tadao, Letts, Edward R., Key, Daryl, Jordan, Benjamin

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Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production von Key, Daryl, Letts, Edward, Tsou, Chuan-Wei, Ji, Mi-Hee, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Shen, Shyh-Chiang, Dupuis, Russell, Hashimoto, Tadao

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Defect structure of a free standing GaN wafer grown by the ammonothermal method von Sintonen, Sakari, Suihkonen, Sami, Jussila, Henri, Lipsanen, Harri, Tuomi, Turkka O., Letts, Edward, Hoff, Sierra, Hashimoto, Tadao

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Improvement of structural quality in the initial stage of GaN growth by basic ammonothermal method von Nojima, Yoshihiro, Ikari, Masanori, Letts, Edward, Hashimoto, Tadao

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Growth of Bulk GaN Crystals by the Basic Ammonothermal Method von Hashimoto, Tadao, Wu, Feng, Speck, James S., Nakamura, Shuji

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Status and perspectives of the ammonothermal growth of GaN substrates von Hashimoto, Tadao, Wu, Feng, Saito, Makoto, Fujito, Kenji, Speck, James S., Nakamura, Shuji

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Seeded growth of GaN by the basic ammonothermal method von Hashimoto, Tadao, Saito, Makoto, Fujito, Kenji, Wu, Feng, Speck, James S., Nakamura, Shuji

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Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method von Key, Daryl, Jordan, Benjamin, Letts, Ed, Hashimoto, Tadao

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Growth of gallium nitride via fluid transport in supercritical ammonia von Hashimoto, Tadao, Fujito, Kenji, Haskell, Benjamin A., Fini, Paul T., Speck, James S., Nakamura, Shuji

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Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices von Hashimoto, Tadao, Letts, Edward R., Key, Daryl

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A GaN bulk crystal with improved structural quality grown by the ammonothermal method von Hashimoto, Tadao, Wu, Feng, Speck, James S, Nakamura, Shuji

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Resistivity of manganese doped GaN grown by near equilibrium ammonothermal (NEAT) method von Hashimoto, Tadao, Key, Daryl, Letts, Edward, Gaddy, Mathew, Gregory, Austin, Dickens, James, West, Tim, Zhao, Wei, Guo, Mengzhe, Buyuklimanli, Temel

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Ammonothermal Growth of GaN on an over-1-inch Seed Crystal von Hashimoto, Tadao, Fujito, Kenji, Saito, Makoto, Speck, James S., Nakamura, Shuji

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X-ray characterization technique for the assessment of surface damage in GaN wafers von Letts, Edward, Sun, Yimeng, Key, Daryl, Jordan, Benjamin, Hashimoto, Tadao

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Evaluation of GaN substrates grown in supercritical basic ammonia von Saito, Makoto, Yamada, Hisashi, Iso, Kenji, Sato, Hitoshi, Hirasawa, Hirohiko, Kamber, Derrick S., Hashimoto, Tadao, DenBaars, Steven P., Speck, James S., Nakamura, Shuji

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