Raman Intensity of Phonon Modes in InGaAsP Quaternary Alloys Grown on (100) InP in the Region of Immiscibility von Touko Sugiura, Touko Sugiura, Nobuyasu Hase, Nobuyasu Hase, Yasuhiro Iguchi, Yasuhiro Iguchi, Nobuhiko Sawaki, Nobuhiko Sawaki

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Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region von Sugiura, Touko, Hase, Nobuyasu, Iguchi, Yasuhiro, Sawaki, Nobuhiko

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Raman scattering study of the immiscible region in InGaAsP grown by LPE on (100) and (111) GaAs von SUGIURA, T, HASE, N, HIRAMATSU, K, SAWAKI, N

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Raman scattering of InGaAsP lattice-matched to GaAs in the region of immiscibility von SUGIURA, T, HASE, N, GOTO, H, TANAKA, S, HIRAMATSU, K, SAWAKI, N, AKASAKI, I

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Deep levels in InP grown by MOCVD von OGURA, M, MIZUTA, M, HASE, N, KUKIMOTO, H

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Auto-doping phenomena for the InGaAsP active layer in DH structure grown by LPE von SASAI, Y, YOSHIOKA, Y, HASE, N

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A 1.3 μm InGaAsP/InP multiquantum well laser grown by LPE von SASAI, Y, HASE, N, KAJIWARA, T

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MOCVD growth and characterization of (AlxGa1-x)yIn1-yP/GaAs von BAN, Y, OGURA, M, MORISAKI, M, HASE, N

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A study of deep levels in MOCVD-grown InP/semi-insulating InP structure von OGURA, M, MIZUTA, M, HASE, N, KUKIMOTO, H

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A 1.3 µm InGaAsP/InP Multiquantum Well Laser Grown by LPE von Sasai, Yoichi, Hase, Nobuyasu, Kajiwara, Takao

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InP MESFET Grown by MOCVD von Ogura, Mototsugu, Inoue, Kaoru, Ban, Yuzaburoh, Uno, Tomoaki, Morisaki, Motoji, Hase, Nobuyasu

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JPS6336444B von HASE NOBUYASU

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JPS6259895B von HASE NOBUYASU

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JPS628957B von HASE NOBUYASU

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PHOTODETECTOR INTEGRATED WITH OPTICAL WAVE GUIDE von HASE NOBUYASU

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SEMICONDUCTOR DEVICE von HASE NOBUYASU

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MULTIPLE WAVELENGTH LIGHT DETECTING DEVICE von HASE NOBUYASU

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DEVICE FOR TRANSMITTING SIGNAL von HASE NOBUYASU

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SEMICONDUCTOR DEVICE von HASE NOBUYASU

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SEMICONDUCTOR PHOTO DETECTOR von HASE NOBUYASU

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