Physical evidence of meminductance in a passive, two-terminal circuit element von Dinavahi, Abhiram, Yamamoto, Alexandre, Harris, H. Rusty

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RF Dielectric Loss Due to MOCVD Aluminum Nitride on High Resistivity Silicon von Berber, Feyza, Johnson, Derek W., Sundqvist, Kyle M., Piner, Edwin L., Huff, Gregory H., Rusty Harris, H.

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Band offset measurements of the GaN/dielectric interfaces von Coan, Mary R., Woo, Jung Hwan, Johnson, Derek, Gatabi, Iman Rezanezhad, Harris, H. Rusty

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Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes von Wen, Huang-Chun, Majhi, Prashant, Choi, Kisik, Park, C.S., Alshareef, Husam N., Rusty Harris, H., Luan, Hongfa, Niimi, Hiro, Park, Hong-Bae, Bersuker, Gennadi, Lysaght, Patrick S., Kwong, Dim-Lee, Song, S.C., Lee, Byoung Hun, Jammy, Raj

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Simulation of a Multidimensional Input Quantum Perceptron von Yamamoto, Alexandre Y., Sundqvist, Kyle M., Li, Peng, Harris, H. Rusty

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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology von Johnson, Derek W., Lee, Rinus T. P., Hill, Richard J. W., Man Hoi Wong, Bersuker, Gennadi, Piner, Edwin L., Kirsch, Paul D., Harris, H. Rusty

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On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High- k Dielectrics von Huang-Chun Wen, Harris, H.R., Young, C.D., Hongfa Luan, Alshareef, H.N., Kisik Choi, Dim-Lee Kwong, Majhi, P., Bersuker, G., Byoung Hun Lee

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Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe von Huang, J., Kirsch, P.D., Jungwoo Oh, Se Hoon Lee, Majhi, P., Harris, H.R., Gilmer, D.C., Bersuker, G., Dawei Heh, Chang Seo Park, Park, C., Hsing-Huang Tseng, Jammy, R.

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-VTh Engineering von MUHAMMAD MUSTAFA HUSSAIN, SMITH, Casey E, RUSTY HARRIS, H, YOUNG, Chadwin D, TSENG, Hsing-Huang, JAMMY, Rajarao

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Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs von Johnson, Derek W., Yum, Jung Hwan, Hudnall, Todd W., Mushinski, Ryan M., Bielawski, Christopher W., Roberts, John C., Wang, Wei-E, Banerjee, Sanjay K., Harris, H. Rusty

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Work function extraction of metal gates with alternate channel materials von Coan, Mary, Johnson, Derek, Hwan Woo, Jung, Biswas, Nivedita, Misra, Veena, Majhi, Prashant, Rusty Harris, H.

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A Simplified Superior Floating-Body/Gate DRAM Cell von Zhichao Lu, Fossum, J.G., Ji-Woon Yang, Harris, H.R., Trivedi, V.P., Min Chu, Thompson, S.E.

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Toward single electron resolution phonon mediated ionization detectors von Mirabolfathi, Nader, Harris, H. Rusty, Mahapatra, Rupak, Sundqvist, Kyle, Jastram, Andrew, Serfass, Bruno, Faiez, Dana, Sadoulet, Bernard

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Toward single electron resolution phonon mediated ionization detectors von Mirabolfathi, Nader, Harris, H. Rusty, Mahapatra, Rupak, Sundqvist, Kyle, Jastram, Andrew, Serfass, Bruno, Faiez, Dana, Sadoulet, Bernard

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k /Metal Gates CMOS FinFETs for Multi- V Th Engineering von Hussain, Muhammad Mustafa, Smith, Casey E, Harris, HRusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao

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Wet etching silicon nanofins with (111)-oriented sidewalls von Liu, Lianci, Kuryatkov, Vladimir V., Nikishin, Sergey A., Harris, H. Rusty, Holtz, Mark

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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology : GaN ELECTRONIC DEVICES von JOHNSON, Derek W, LEE, Rinus T. P, HILL, Richard J. W, MAN HOI WONG, BERSUKER, Gennadi, PINER, Edwin L, KIRSCH, Paul D, HARRIS, H. Rusty

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi- V rmTh Engineering von Hussain, Muhammad Mustafa, Smith, Casey E, Harris, H Rusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-[Formula Omitted]/Metal Gates CMOS FinFETs for Multi- [Formula Omitted] Engineering von Hussain, Muhammad Mustafa, Smith, Casey E, Harris, H. Rusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k/Metal Gates CMOS FinFETs for Multi- V Engineering von Hussain, M.M., Smith, C.E., Harris, H.R., Young, C.D., Hsing-Huang Tseng, Jammy, R.

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