GLASS FORMED WITH UNEVENNESS ON SURFACE, AND METHOD FOR PRODUCING THE SAME von HARIMA YU

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METHOD FOR PRODUCING GLASS FORMED WITH UNEVENNESS ON SURFACE, AND MASK von HARIMA YU

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AQUEOUS PASTE FOR ELECTROCHEMICAL CELL, AQUEOUS DISPERSION FOR ELECTROCHEMICAL CELL, AND ELECTRODE PLATE FOR ELECTROCHEMICAL CELL von MIYATA GEN, ETO AKINORI, HARIMA YU

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BINDER FOR ELECTROCHEMICAL CELL, AND PASTE AND ELECTRODE COMPRISING THE BINDER von MIYATA GEN, ETO AKINORI, HARIMA YU

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ELECTROCHEMICAL CELL ACRYLIC WATER DISPERSION AND AQUEOUS PASTE AND MANUFACTURING METHOD OF ELECTRODE AND BATTERY CONSISTING OF THE SAME von ETO AKINORI, MIYATA GEN, HARIMA YU, IIMURO YOSHIFUMI, YOSHIMURA HISAHIRO

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Regular-triangle trimer and charge order preserving the Anderson condition in the pyrochlore structure of CsW2O6 von Okamoto, Yoshihiko, Amano, Haruki, Katayama, Naoyuki, Sawa, Hiroshi, Niki, Kenta, Mitoka, Rikuto, Harima, Hisatomo, Hasegawa, Takumi, Ogita, Norio, Tanaka, Yu, Takigawa, Masashi, Yokoyama, Yasunori, Takehana, Kanji, Imanaka, Yasutaka, Nakamura, Yuto, Kishida, Hideo, Takenaka, Koshi

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Loss of Bacitracin Resistance Due to a Large Genomic Deletion among Bacillus anthracis Strains von Furuta, Yoshikazu, Harima, Hayato, Ito, Emiko, Maruyama, Fumito, Ohnishi, Naomi, Osaki, Ken, Ogawa, Hirohito, Squarre, David, Hang'ombe, Bernard Mudenda, Higashi, Hideaki

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Fermi surface investigation of the filled skutterudite LaRu 4 As 12 von Klotz, J., Götze, K., Lorenz, V., Prots, Yu, Rosner, H., Harima, H., Bochenek, L., Henkie, Z., Cichorek, T., Sheikin, I., Wosnitza, J.

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A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance von Sakai, Mitsuhiko, Masuda, Takeyoshi, Hiyoshi, Toru, Wada, Keiji, Saito, Yu, Hiratsuka, Kenji, Hatayama, Tomoaki, Mikamura, Yasuki, Yano, Hiroshi, Nishiguchi, Masanori, Tamaso, Hideto

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Band Gap of Hexagonal InN and InGaN Alloys von Davydov, V.Yu, Klochikhin, A.A., Emtsev, V.V., Kurdyukov, D.A., Ivanov, S.V., Vekshin, V.A., Bechstedt, F., Furthmüller, J., Aderhold, J., Graul, J., Mudryi, A.V., Harima, H., Hashimoto, A., Yamamoto, A., Haller, E.E.

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High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2 von Lee, Bong Mook, Yang, Xiang Yu, Misra, Veena

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Chronic lung lesions in COVID-19 survivors: predictive clinical model von Carvalho, Carlos Roberto Ribeiro, Chate, Rodrigo Caruso, Sawamura, Marcio Valente Yamada, Garcia, Michelle Louvaes, Lamas, Celina Almeida, Cardenas, Diego Armando Cardona, Lima, Daniel Mario, Scudeller, Paula Gobi, Salge, João Marcos, Nomura, Cesar Higa, Gutierrez, Marco Antonio, Araújo, Adriana L, Segurado, Aluisio C, Montal, Amanda C, Miethke-Morais, Anna, Levin, Anna S, Perondi, Beatriz, Guedes, Bruno F, Carmo, Carolina, Lázari, Carolina S, Antonio, Cassiano C, Tanaka, Clarice, Leite, Claudia C, Gomes, Cristiano, Utiyama, Edivaldo M, Burdmann, Emmanuel A, Bonfá, Eloisa, Kallas, Esper G, Sabino, Ester, Miguel, Euripedes C, Pinna, Fabio R, Kawano, Fabiane Y O, Busatto, Geraldo F, Cerri, Giovanni G, Fonseca, Guilherme, Souza, Heraldo P, Marcilio, Izabel, Rios, Izabel C, Hallak, Jorge, Krieger, José Eduardo, Ferreira, Juliana C, Marchini, Julio F M, Oliveira, Larissa S, Harima, Leila, Batisttella, Linamara R, Yu, Luis, M Castro, Luiz Henrique, Rocha, Marcelo C, Magri, Marcello M C, Mancini, Marcio, de Jesus, Maria Amélia, J M Corrêa, Maria Cassia, P B Francisco, Maria Cristina, Rossi, Maria Elizabeth, Silva, Marjorie F, Imamura, Marta, Oliveira, Maura S, Gouveia, Nelson, Forlenza, Orestes V, Lotufo, Paulo A, Bento, Ricardo F, Nitrini, Ricardo, Damiano, Rodolfo F, Chammas, Roger, Francisco, Rossana P, G Fusco, Solange R, P Barros-Filho, Tarcisio E, Mauad, Thais, Guimarães, Thaís, Avelino-Silva, Thiago, Filho, Wilson J

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600 V -Class V-Groove SiC MOSFETs von Masuda, Takeyoshi, Hiyoshi, Toru, Wada, Keiji, Saito, Yu, Hiratsuka, Kenji, Furumai, Masaki, Hatayama, Tomoaki, Mikamura, Yasuki

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Fermi surface investigation of the filled skutterudite LaRu4As12 von Klotz, J, Götze, K, Lorenz, V, Prots, Yu, Rosner, H, Harima, H, Bochenek, L, Henkie, Z, Cichorek, T, Sheikin, I, Wosnitza, J

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Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer von Raghothamachar, Balaji, Yang, Yu, Dudley, Michael, Sanchez, Edward, Hansen, Darren M., Mueller, Stephan G., Thomas, Bernd, Loboda, Mark J., Chung, Gil Yong, Wu, Fang Zhen, Byrapa, Sha Yan, Zhang, Jie, Wang, Huan Huan

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Analysis of C-Face 4H-SiC MOS Capacitors with ZrO2 Gate Dielectric von Chang, Yu Hao, Lee, Kung Yen, Chan, Le Shan

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Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers von Yan, Guo Guo, Wang, Zhan Guo, Dong, Lin, Yu, Jun, Wang, Lei, Zhang, Xin He, Zhao, Wan Shun, Sun, Guo Sheng, Li, Xi Guang

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Dicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma Confinement von Matsuyama, Satoshi, Sano, Yasuhisa, Nishikawa, Hiroaki, Okada, Yuu, Yamauchi, Kazuto, Yamamura, Kazuya

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A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures von Shustov, Denis B., Zamoryanskaya, Maria V., Shcheglov, Mikhail P., Davydov, Sergey Yu, Lebedev, Alexander A., Kirilenko, Demid A., Lebedev, Sergey P., Sorokin, Lev M.

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Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band Bending von Huang, Wei, Liu, Xi, Liu, Xue Chao, Shi, Er Wei, Zhuo, Shi Yi, Zheng, Yan Qing, Zhou, Tian Yu, Yang, Jian Hua

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