Nano-LED array fabrication suitable for future single photon lithography von Mikulics, M, Hardtdegen, H

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The Role of Si during the Growth of GaN Micro- and Nanorods von Tessarek, C, Heilmann, M, Butzen, E, Haab, A, Hardtdegen, H, Dieker, C, Spiecker, E, Christiansen, S

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Experimental determination of Rashba and Dresselhaus parameters and g-factor anisotropy via Shubnikov-de Haas oscillations von Herzog, F, Hardtdegen, H, Schäpers, Th, Grundler, D, Wilde, M A

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Supercurrent in Nb/InAs-nanowire/Nb Josephson junctions von Günel, H. Y., Batov, I. E., Hardtdegen, H., Sladek, K., Winden, A., Weis, K., Panaitov, G., Grützmacher, D., Schäpers, Th

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Visualization and investigation of the non-thermalized electrons in an InAs nanowire by scanning gate microscopy von Zhukov, A A, Volk, Ch, Winden, A, Hardtdegen, H, Schäpers, Th

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Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes von Mikulics, M., Arango, Y. C., Winden, A., Adam, R., Hardtdegen, A., Grützmacher, D., Plinski, E., Gregušová, D., Novák, J., Kordoš, P., Moonshiram, A., Marso, M., Sofer, Z., Lüth, H., Hardtdegen, H.

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Stability of charged density waves in InAs nanowires in an external magnetic field von Zhukov, A A, Volk, Ch, Winden, A, Hardtdegen, H, Schäpers, Th

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Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer von Mikulics, M, Kordoš, P, Gregušová, D, Gaži, Š, Novák, J, Sofer, Z, Mayer, J, Hardtdegen, H

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Crossover from Josephson Effect to Single Interface Andreev Reflection in Asymmetric Superconductor/Nanowire Junctions von Günel, H. Y, Borgwardt, N, Batov, I. E, Hardtdegen, H, Sladek, K, Panaitov, G, Grützmacher, D, Schäpers, Th

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Generation of terahertz transients from Co2Fe0.4Mn0.6Si Heusler alloy/heavy-metal bilayers von Heidtfeld, S., Adam, R., Kubota, T., Takanashi, K., Cao, D., Schmitz-Antoniak, C., Bürgler, D.E., Wang, F., Greb, C., Chen, G., Komissarov, I., Hardtdegen, H., Mikulics, M., Sobolewski, R., Suga, S., Schneider, C.M.

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Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy von Mikulics, Martin, Adam, Roman, Chen, Genyu, Chakraborty, Debamitra, Cheng, Jing, Pericolo, Anthony, Komissarov, Ivan, Bürgler, Daniel E., Heidtfeld, Sarah F., Serafini, John, Preble, Stefan, Sobolewski, Roman, Schneider, Claus M., Mayer, Joachim, Hardtdegen, Hilde H.

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Effect of Si-doping on InAs nanowire transport and morphology von Wirths, S., Weis, K., Winden, A., Sladek, K., Volk, C., Alagha, S., Weirich, T. E., von der Ahe, M., Hardtdegen, H., Lüth, H., Demarina, N., Grützmacher, D., Schäpers, Th

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Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy von Rodenbücher, C., Gensch, T., Speier, W., Breuer, U., Pilch, M., Hardtdegen, H., Mikulics, M., Zych, E., Waser, R., Szot, K.

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Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires von Haas, F, Sladek, K, Winden, A, von der Ahe, M, Weirich, T E, Rieger, T, Lüth, H, Grützmacher, D, Schäpers, Th, Hardtdegen, H

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Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N2 carrier gas von AKABORI, M, SLADEK, K, HARDTDEGEN, H, SCHÄPERS, Th, GRÜTZMACHER, D

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MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires von Sladek, K., Klinger, V., Wensorra, J., Akabori, M., Hardtdegen, H., Grützmacher, D.

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Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbons von Sydoruk, V A, Zadorozhnyi, I, Hardtdegen, H, Lüth, H, Petrychuk, M V, Naumov, A V, Korotyeyev, V V, Kochelap, V A, Belyaev, A E, Vitusevich, S A

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The electronic transport of top subband and disordered sea in an InAs nanowire in the presence of a mobile gate von Zhukov, A A, Volk, C, Winden, A, Hardtdegen, H, Schäpers, T

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Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range von Winden, A, Mikulics, M, Grützmacher, D, Hardtdegen, H

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Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires von Blömers, C, Rieger, T, Zellekens, P, Haas, F, Lepsa, M I, Hardtdegen, H, Gül, Ö, Demarina, N, Grützmacher, D, Lüth, H, Schäpers, Th

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